Indium-incorporation enhancement of photoluminescence properties of Ga(In) SbBi alloys

Ga(In)SbBi alloys grown by molecular-beam epitaxy on GaSb substrates with up to 5.5% In and 1.8% Bi were studied by temperature- and power-dependent photoluminescence (PL) and compared to previous photoreflectance (PR) results. High energy (HE) and low energy (LE) PL peaks were observed and attributed respectively to Ga(In)SbBi bandgap-related emission and native acceptor-related emission. For GaSbBi below 100 K, the HE peak is at slightly lower energy than the bandgap determined from PR, indicating carrier localization. This phenomenon is significantly weaker in PL of GaInSbBi alloys, suggesting that the presence of indium improves the optical quality over that of GaSbBi

GaSbBi alloys and heterostructures: fabrication and properties

International audienceDilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures

Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be similar to 28.5 meV from the temperature dependent PL studies. The formation process of nano-flowers is investigated and a qualitative mechanism is proposed

Phosphorus and Nitrogen Containing Dilute Bismides

Phosphorus and nitrogen containing dilute bismides differ from arsenic and antimony containing bismides in that the anions have large differences in atomic size and electronegativity, offering rich potentials for strain as well as bandgap engineering. In this chapter, we show theoretical modeling, epitaxy and characterizations of III-PBi and III-NBi and their quaternary alloys

Bismuth-Related Nanostructures

Bismuth can modify surface reconstruction of III-V semiconductors and affect their growth conditions. Bismuth incorporation into III-Vs strongly changes their electronic properties. We present an overview of how the above Bi-related effects influence structural and optical properties of III-V nanostructures