638 research outputs found
Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
Using high-quality FeSi/-Ge Schottky-tunnel-barrier contacts, we
study spin accumulation in an -type germanium (-Ge) channel. In the
three- or two-terminal voltage measurements with low bias current conditions at
50 K, Hanle-effect signals are clearly detected only at a forward-biased
contact. These are reliable evidence for electrical detection of the spin
accumulation created in the -Ge channel. The estimated spin lifetime in
-Ge at 50 K is one order of magnitude shorter than those in -Si reported
recently. The magnitude of the spin signals cannot be explained by the commonly
used spin diffusion model. We discuss a possible origin of the difference
between experimental data and theoretical values.Comment: 4 pages, 3 figures, To appear in J. Appl. Phy
Scale Dependence of the Retarded van der Waals Potential
We study the ground state energy for a system of two hydrogen atoms coupled
to the quantized Maxwell field in the limit together with the
relative distance between the atoms increasing as , . In particular we determine explicitly the crossover function from the
van der Waals potential to the retarded van der Waals
potential, which takes place at scale .Comment: 19 page
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