Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces

Gallium (Ga) surface adsorption and desorption kinetics on 6H-SiC(0001) are investigated using reflection high-energy electron diffraction. It is found that for Ga adsorption, a wetting layer bonds strongly to the SiC(0001) surface. Additional Ga atoms form droplets on top of the wetting layer. The Ga droplets behave like a metallic liquid. The activation energies for desorption are determined to be 3.5 eV for Ga in the wetting layer and 2.5 eV for Ga in the droplets. It is further found that the desorption of Ga atoms from the wetting layer follows a zero-order kinetics, i.e., the desorption rate is independent of the number of adsorbed atoms. ©2000 The American Physical Society.published_or_final_versio

Magnetic nanoparticle density mapping from the magnetically induced displacement data: a simulation study

<p>Abstract</p> <p>Background</p> <p>Magnetic nanoparticles are gaining great roles in biomedical applications as targeted drug delivery agents or targeted imaging contrast agents. In the magnetic nanoparticle applications, quantification of the nanoparticle density deposited in a specified region is of great importance for evaluating the delivery of the drugs or the contrast agents to the targeted tissues. We introduce a method for estimating the nanoparticle density from the displacement of tissues caused by the external magnetic field.</p> <p>Methods</p> <p>We can exert magnetic force to the magnetic nanoparticles residing in a living subject by applying magnetic gradient field to them. The nanoparticles under the external magnetic field then exert force to the nearby tissues causing displacement of the tissues. The displacement field induced by the nanoparticles under the external magnetic field is governed by the Navier's equation. We use an approximation method to get the inverse solution of the Navier's equation which represents the magnetic nanoparticle density map when the magnetic nanoparticles are mechanically coupled with the surrounding tissues. To produce the external magnetic field inside a living subject, we propose a coil configuration, the Helmholtz and Maxwell coil pair, that is capable of generating uniform magnetic gradient field. We have estimated the coil currents that can induce measurable displacement in soft tissues through finite element method (FEM) analysis.</p> <p>Results</p> <p>From the displacement data obtained from FEM analysis of a soft-tissue-mimicking phantom, we have calculated nanoparticle density maps. We obtained the magnetic nanoparticle density maps by approximating the Navier's equation to the Laplacian of the displacement field. The calculated density maps match well to the original density maps, but with some halo artifacts around the high density area. To induce measurable displacement in the living tissues with the proposed coil configuration, we need to apply the coil currents as big as 10⁴A.</p> <p>Conclusions</p> <p>We can obtain magnetic nanoparticle maps from the magnetically induced displacement data by approximating the Navier's equation under the assumption of uniform-gradient of the external magnetic field. However, developing a coil driving system with the capacity of up to 10⁴A should be a great technical challenge.</p

Role of ATM signaling in PALB2-dependent DNA damage responses

Poster presentation - Theme 1: Cell biologyMutations of the PALB2 gene lead to a number of hereditary cancer-predisposing syndromes, including Fanconi anemia and hereditary breast and ovarian cancer syndrome. Originally identified as a core DNA repair factor, emerging evidence now implicates PALB2 in cell cycle checkpoint control, DNA replication, oxidative stress regulation and transcription, highlighting the multi-functionality of the tumor suppressor. Notably, mechanistically how its expanding repertoire of functions are orchestrated remains ...postprin

A study of Inx Ga1-x N growth by reflection high-energy electron diffraction

Epitaxial growth of Inx Ga1-x N alloys on GaN (0001) by plasma-assisted molecular-beam epitaxy is investigated using the in situ reflection high-energy electron-diffraction (RHEED) technique. Based on RHEED pattern changes over time, the transition of growth mode from two-dimensional (2D) nucleation to three-dimensional islanding is studied for various indium compositions. RHEED specular-beam intensity oscillations are recorded during the 2D wetting-layer growth, and the dependences of the oscillation period/frequency on the substrate temperature and source flux are established. By measuring the spacing between diffraction spots in RHEED, we also estimated indium composition, x, in alloys grown under different flux combinations. Incorporation coefficients of both gallium and indium are derived. Possible surface segregation of indium atoms is finally examined. © 2005 American Institute of Physics.published_or_final_versio

The Ubiquitin Specific Protease USP34 promotes ubiquitin signaling at DNA double-strand breaks

published_or_final_versio

Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy

GaN (0001) films grown by molecular beam epitaxy (MBE) were studied using scanning tunneling microscopy (STM). 'Ghost' islands were observed on surfaces grown under excess Ga conditions. These ghost islands were associated to a metastable, intermediate nucleation state of the surface.published_or_final_versio

Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

GaN exists in both wurtzite and zinc-blende phases and the growths of the two on its (0001) or (111) surfaces are achieved by choosing proper deposition conditions of molecular-beam epitaxy (MBE). At low substrate temperatures but high gallium fluxes, metastable zinc-blende GaN films are obtained, whereas at high temperatures and/or using high nitrogen fluxes, equilibrium wurtzite phase GaN epilayers resulted. This dependence of crystal structure on substrate temperature and source flux is not affected by deposition rate. Rather, the initial stage nucleation kinetics plays a primary role in determining the crystallographic structures of epitaxial GaN by MBE. © 2006 American Institute of Physics.published_or_final_versio

Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

Stress and its effects on optical properties of GaN epilayers grown in Si(111), 6H-SiC(0001), and c-plane sapphire were investigated. Large tensile stress was present in GaN epilayers grown on Si and 6H-SiC, and a small compressive stress appeared in the film grown on sapphire. The results showed that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films.published_or_final_versio

An E2-guided E3 Screen Identifies the RNF17-UBE2U Pair as Regulator of the Radiosensitivity, Immunodeficiency, Dysmorphic Features, and Learning Difficulties (RIDDLE) Syndrome Protein RNF168

Protein ubiquitination has emerged as a pivotal regulatory reaction that promotes cellular responses to DNA damage. With a goal to delineate the DNA damage signal transduction cascade, we systematically analyzed the human E2 ubiquitin- and ubiquitin-like-conjugating enzymes for their ability to mobilize the DNA damage marker 53BP1 onto ionizing radiation-induced DNA double strand breaks. An RNAi-based screen identified UBE2U as a candidate regulator of chromatin responses at double strand breaks. Further mining of the UBE2U interactome uncovered its cognate E3 RNF17 as a novel factor that, via the radiosensitivity, immunodeficiency, dysmorphic features, and learning difficulties (RIDDLE) syndrome protein RNF168, enforces DNA damage responses. Our screen allowed us to uncover new players in the mammalian DNA damage response and highlights the instrumental roles of ubiquitin machineries in promoting cell responses to genotoxic stress.published_or_final_versio

Coherent and dislocated three-dimensional islands of Inx Ga1-x N self-assembled on GaN(0001) during molecular-beam epitaxy

Molecular-beam epitaxy of Inx Ga1-x N alloy on GaN(0001) is investigated by scanning tunneling microscopy. The Stranski-Krastanov mode of growth of the alloy is followed, where the newly nucleated three-dimensional islands are initially coherent to the underlying GaN and the wetting layer, but then become dislocated when grown bigger than about 20 nm in the lateral dimension. Two types of islands show different shapes, where the coherent ones are cone shaped and the dislocated ones are pillar like, having flat-tops. Within a certain range of material coverage, the surface contains both coherent and dislocated islands, showing an overall bimodal island-size distribution. The continued deposition on such surfaces leads to the pronounced growth of dislocated islands, whereas the sizes of the coherent islands change very little. © 2005 The American Physical Society.published_or_final_versio