Acceptor formation in Mg-doped, indium-rich Ga x In1−xN: evidence for p-type conductivity

We report on the Mg-doped, indium-rich GaxIn1-xN (x 150 K, is determined by the longitudinal-optical phonon scattering together with the thermal regeneration of non-equilibrium minority carriers from traps with an average depth of 103 +/- 15 meV. This value is close to the Mg binding energy in GaInN. The complementary measurements of transient photoluminescence at liquid He temperatures give the e-A0 binding energy of approximately 100 meV. Furthermore, Hall measurements in the Mg-doped material also indicate an activated behaviour with an acceptor binding energy of 108 +/- 20 meV

Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity

We report on the Mg-doped, indium-rich Ga (x) In1-x N (x 150 K, is determined by the longitudinal-optical phonon scattering together with the thermal regeneration of non-equilibrium minority carriers from traps with an average depth of 103 +/- 15 meV. This value is close to the Mg binding energy in GaInN. The complementary measurements of transient photoluminescence at liquid He temperatures give the e-A(0) binding energy of approximately 100 meV. Furthermore, Hall measurements in the Mg-doped material also indicate an activated behaviour with an acceptor binding energy of 108 +/- 20 meV