Noise at a Fermi-edge singularity

We present noise measurements of self-assembled InAs quantum dots at high magnetic fields. In comparison to I-V characteristics at zero magnetic field we notice a strong current overshoot which is due to a Fermi-edge singularity. We observe an enhanced suppression in the shot noise power simultaneous to the current overshoot which is attributed to the electron-electron interaction in the Fermi-edge singularity

Reply to the correspondence: "On the fracture toughness of bioinspired ceramic materials"

This is a reply to the correspondence of Prof. Robert Ritchie: "On the fracture toughness of bioinspired ceramic materials", submitted to Nature Materials, which discusses the fracture toughness values of the following papers: Bouville, F., Maire, E., Meille, S., Van de Moort\`ele, B., Stevenson, A. J., & Deville, S. (2014). Strong, tough and stiff bioinspired ceramics from brittle constituents. Nature Materials, 13(5), 508-514 and Le Ferrand, H., Bouville, F., Niebel, T. P., & Studart, A. R. (2015). Magnetically assisted slip casting of bioinspired heterogeneous composites. Nature Materials, 14(11), 1172-1172.Comment: 5 pages, 2 figure

Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots

We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots

Measurement of the electron drift velocity for directional dark matter detectors

Three-dimensional track reconstruction is a key issue for directional Dark Matter detection. It requires a precise knowledge of the electron drift velocity. Magboltz simulations are known to give a good evaluation of this parameter. However, large TPC operated underground on long time scale may be characterized by an effective electron drift velocity that may differ from the value evaluated by simulation. In situ measurement of this key parameter is hence a way to avoid bias in the 3D track reconstruction. We present a dedicated method for the measurement of the electron drift velocity with the MIMAC detector. It is tested on two gas mixtures : $\rm CF_4$ and $\rm CF_4+CHF_3$. We also show that adding $\rm CHF_3$ allows us to lower the electron drift velocity while keeping almost the same Fluorine content of the gas mixture.Comment: Proceedings of the 4th international conference on Directional Detection of Dark Matter (CYGNUS 2013), 10-12 June 2013, Toyama, Japa

In situ measurement of the electron drift velocity for upcoming directional Dark Matter detectors

Three-dimensional track reconstruction is a key issue for directional Dark Matter detection and it requires a precise knowledge of the electron drift velocity. Magboltz simulations are known to give a good evaluation of this parameter. However, large TPC operated underground on long time scale may be characterized by an effective electron drift velocity that may differ from the value evaluated by simulation. In situ measurement of this key parameter is hence needed as it is a way to avoid bias in the 3D track reconstruction. We present a dedicated method for the measurement of the electron drift velocity with the MIMAC detector. It is tested on two gas mixtures: CF4 and CF4 + CHF3. The latter has been chosen for the MIMAC detector as we expect that adding CHF3 to pure CF4 will lower the electron drift velocity. This is a key point for directional Dark Matter as the track sampling along the drift field will be improved while keeping almost the same Fluorine content of the gas mixture. We show that the drift velocity at 50 mbar is reduced by a factor of about 5 when adding 30% of CHF3.Comment: 19 pages, 14 figures. Minor corrections, matches published version in JINS

Fermi Edge Singularities in Transport through Quantum Dots

We study the Fermi-edge singularity appearing in the current-voltage characteristics for resonant tunneling through a localized level at finite temperature. An explicit expression for the current at low temperature and near the threshold for the tunneling process is presented which allows to coalesce data taken at different temperatures to a single curve. Based on this scaling function for the current we analyze experimental data from a GaAs-AlAs-GaAs tunneling device with embedded InAs quantum dots obtained at low temperatures in high magnetic fields.Comment: 12 pages, 5 figure