Low temperature exfoliation process in hydrogen-implanted germanium layers

The feasibility of transferring hydrogen-implanted germanium to silicon with a reduced thermal budget is demonstrated. Germanium samples were implanted with a splitting dose of 5 x 10(16) H(2)(+) cm(-2) at 180 keV and a two-step anneal was performed. Surface roughness and x-ray diffraction pattern measurements, combined with cross-sectional TEM analysis of hydrogen-implanted germanium samples were carried out in order to understand the exfoliation mechanism as a function of the thermal budget. It is shown that the first anneal performed at low temperature (<= 150 degrees C for 22 h) enhances the nucleation of hydrogen platelets significantly. The second anneal is performed at 300 degrees C for 5 min and is shown to complete the exfoliation process by triggering the formation of extended platelets. Two key results are highlighted: (i) in a reduced thermal budget approach, the transfer of hydrogen-implanted germanium is found to follow a mechanism similar to the transfer of hydrogen-implanted InP and GaAs, (ii) such a low thermal budget (<300 degrees C) is found to be suitable for directly bonded heterogeneous substrates, such as germanium bonded to silicon, where different thermal expansion coefficients are involved. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3326942

Epitaxial Growth and Processing of Compound Semiconductors

Contains an introduction and reports on three research projects.MIT Lincoln LaboratoryU.S. Air Force - Office of Scientific Research Grant F49620-96-1-0126National Science Foundation Grant DMR 94-00334Joint Services Electronics Progra

Epitaxial Growth and Processing of Compound Semiconductors

Contains an introduction and reports on six research projects.Defense Advanced Research Projects Agency/U.S. Navy - Office of Naval Research University Research Initiative Subcontract N00014-92-J-1893Joint Services Electronics Program Grant DAAH04-95-1-0038National Center for Integrated Photonics Technology Contract 542-381National Science Foundation Grant DMR 92-02957MIT Lincoln Laboratory Contract BX-6085National Center for Integrated Photonics Technology Subcontract 542-383U.S. Air Force - Office of Scientific Research Grant F49620-96-1-0126U.S. Navy - Office of Naval Research Grant N00014-91-J-1956National Science Foundation Grant DMR 94-0033