2,961 research outputs found
ΠΠ΅ΡΡΠΏΠ΅ΠΊΡΠΈΠ²Ρ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΡ ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ ΠΏΡΠΎΡΠΈΠ²ΠΎΠ²ΠΎΡΠΏΠ°Π»ΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΠΏΡΠ΅ΠΏΠ°ΡΠ°ΡΠ° ΠΌΠ΅Π»ΠΎΠΊΡΠΈΠΊΠ°ΠΌ (ΠΠΌΠ΅Π»ΠΎΡΠ΅ΠΊΡ) Π² ΠΊΠ»ΠΈΠ½ΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΏΡΠ°ΠΊΡΠΈΠΊΠ΅
The paper presents data on the effectiveness, safety, tolerance, major mechanisms of action, and prospects for clinically using meloxicam, a current selective nonsteroidal anti-inflammatory drug, against cyclooxygenase-2. It describes the advantages of meloxicam for injections, which begins acting promptly and shows an adequate long analgesic effect.ΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½Ρ Π΄Π°Π½Π½ΡΠ΅ ΠΎΠ± ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ, Π±Π΅Π·ΠΎΠΏΠ°ΡΠ½ΠΎΡΡΠΈ, ΠΏΠ΅ΡΠ΅Π½ΠΎΡΠΈΠΌΠΎΡΡΠΈ, ΠΎΡΠ½ΠΎΠ²Π½ΡΡ
ΠΌΠ΅Ρ
Π°Π½ΠΈΠ·ΠΌΠ°Ρ
Π΄Π΅ΠΉΡΡΠ²ΠΈΡ, ΠΏΠ΅ΡΡΠΏΠ΅ΠΊΡΠΈΠ²Π°Ρ
ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΡ Π² ΠΊΠ»ΠΈΠ½ΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΏΡΠ°ΠΊΡΠΈΠΊΠ΅ ΠΌΠ΅Π»ΠΎΠΊΡΠΈΠΊΠ°ΠΌΠ° - ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ ΡΠ΅Π»Π΅ΠΊΡΠΈΠ²Π½ΠΎΠ³ΠΎ Π² ΠΎΡΠ½ΠΎΡΠ΅Π½ΠΈΠΈ ΡΠΈΠΊΠ»ΠΎΠΎΠΊΡΠΈΠ³Π΅Π½Π°Π·Ρ 2 Π½Π΅ΡΡΠ΅ΡΠΎΠΈΠ΄Π½ΠΎΠ³ΠΎ ΠΏΡΠΎΡΠΈΠ²ΠΎΠ²ΠΎΡΠΏΠ°Π»ΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΠΏΡΠ΅ΠΏΠ°ΡΠ°ΡΠ°. ΠΠΎΠΊΠ°Π·Π°Π½Ρ ΠΏΡΠ΅ΠΈΠΌΡΡΠ΅ΡΡΠ²Π° ΠΈΠ½ΡΠ΅ΠΊΡΠΈΠΎΠ½Π½ΠΎΠΉ ΡΠΎΡΠΌΡ ΠΌΠ΅Π»ΠΎΠΊΡΠΈΠΊΠ°ΠΌΠ°, Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΠ·ΡΡΡΠ΅ΠΉΡΡ Π±ΡΡΡΡΡΠΌ ΠΈ ΠΏΡΠΎΠ΄ΠΎΠ»ΠΆΠΈΡΠ΅Π»ΡΠ½ΡΠΌ Π°Π½Π°Π»ΡΠ³Π΅ΡΠΈΡΠ΅ΡΠΊΠΈΠΌ Π΄Π΅ΠΉΡΡΠ²ΠΈΠ΅ΠΌ
Mesoscopic mechanism of the domain wall interaction with elastic defects in ferroelectrics
The role of elastic defects on the kinetics of 180-degree uncharged
ferroelectric domain wall motion is explored using continuum time-dependent LGD
equation with elastic dipole coupling. In one dimensional case, ripples, steps
and oscillations of the domain wall velocity appear due to the wall-defect
interactions. While the defects do not affect the limiting-wall velocity vs.
field dependence, they result in the minimal threshold field required to
activate the wall motions. The analytical expressions for the threshold field
are derived and the latter is shown to be much smaller than the thermodynamic
coercive field. The threshold field is linearly proportional to the
concentration of defects and non-monotonically depends on the average distance
between them. The obtained results provide the insight into the mesoscopic
mechanism of the domain wall pinning by elastic defects in ferroelectrics.Comment: 18 pages, 6 figures, 1 appendi
A model for luminescence of localized state ensemble
A distribution function for localized carriers,
, is proposed by solving a
rate equation, in which, electrical carriers' generation, thermal escape,
recapture and radiative recombination are taken into account. Based on this
distribution function, a model is developed for luminescence from localized
state ensemble with a Gaussian-type density of states. The model reproduces
quantitatively all the anomalous temperature behaviors of localized state
luminescence. It reduces to the well-known band-tail and luminescence quenching
models under certain approximations.Comment: 14 pages, 4 figure
On the keV sterile neutrino search in electron capture
A joint effort of cryogenic microcalorimetry (CM) and high-precision
Penning-trap mass spectrometry (PT-MS) in investigating atomic orbital electron
capture (EC) can shed light on the possible existence of heavy sterile
neutrinos with masses from 0.5 to 100 keV. Sterile neutrinos are expected to
perturb the shape of the atomic de-excitation spectrum measured by CM after a
capture of the atomic orbital electrons by a nucleus. This effect should be
observable in the ratios of the capture probabilities from different orbits.
The sensitivity of the ratio values to the contribution of sterile neutrinos
strongly depends on how accurately the mass difference between the parent and
the daughter nuclides of EC-transitions can be measured by, e.g., PT-MS. A
comparison of such probability ratios in different isotopes of a certain
chemical element allows one to exclude many systematic uncertainties and thus
could make feasible a determination of the contribution of sterile neutrinos on
a level below 1%. Several electron capture transitions suitable for such
measurements are discussed.Comment: 16 pages, 9 figures, 2 table
Defect driven flexo-chemical coupling in thin ferroelectric films
Using Landau-Ginzburg-Devonshire theory, we considered the impact of the
flexoelectro-chemical coupling on the size effects inpolar properties and phase
transitions of thin ferroelectric films with a layer of elastic defects. We
investigated a typical case, when defects fill a thin layer below the top film
surface with a constant concentration creating an additional gradient of
elastic fields. The defective surface of the film is not covered with an
electrode, but instead with an ultra-thin layer of ambient screening charges,
characterized by a surface screening length. This geometry is typical for the
scanning probe piezoelectric force microscopy. Obtained results revealed an
unexpectedly strong effect of the joint action of Vegard stresses and
flexoelectric effect (shortly flexo-chemical coupling) on the ferroelectric
transition temperature, distribution of the spontaneous polarization and
elastic fields, domain wall structure and period in thin PbTiO3 films
containing a layer of elastic defects. A nontrivial result is the
ferroelectricity persisting at film thicknesses below 4 nm, temperatures lower
than 350 K and relatively high surface screening length (~0.1 nm). The origin
of this phenomenon is the re-building of the domain structure in the film
(namely the cross-over from c-domain stripes to a-type closure domains) when
its thickness decreases below 4 nm, conditioned by the flexoelectric coupling
and facilitated by negative Vegard effect. For positive Vegard effect, thicker
films exhibit the appearance of pronounced maxima on the thickness dependence
of the transition temperature, whose position and height can be controlled by
the defect type and concentration. The revealed features may have important
implications for miniaturization of ferroelectric-based devices.Comment: 25 pages, 9 figure
Optically induced delocalization of electrons bound by attractive potentials
Within the Floquet theory of periodically driven quantum systems, we
demonstrate that a circularly polarized off-resonant electromagnetic field can
destroy the electron states bound by three-dimensional attractive potentials.
As a consequence, the optically induced delocalization of bound electrons
appears. The effect arises from the changing of topological structure of a
potential landscape under a circularly polarized off-resonant electromagnetic
field which turns simply connected potentials into doubly connected ones.
Possible manifestations of the effect are discussed for conduction electrons in
condensed-matter structures.Comment: Published versio
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