Investigation of multi-phase tubular permanent magnet linear generator for wave energy converters

In this article, an investigation into different magnetization topologies for a long stator tubular permanent magnet linear generator is performed through a comparison based on the cogging force disturbance, the power output, and the cost of the raw materials of the machines. The results obtained from finite element analysis simulation are compared with an existing linear generator described in [1]. To ensure accurate results, the generator developed in [1] is built with 3D CAD and simulated using the finite-element method, and the obtained results are verified with the source.The PRIMaRE project

NMR evidence for inhomogeneous glassy behavior driven by nematic fluctuations in iron arsenide superconductors

We present $^{75}$As nuclear magnetic resonance spin-lattice and spin-spin relaxation rate data in Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ and Ba(Fe$_{1-x}$Cu$_x$)$_2$As$_2$ as a function of temperature, doping and magnetic field. The relaxation curves exhibit a broad distribution of relaxation rates, consistent with inhomogeneous glassy behavior up to 100 K. The doping and temperature response of the width of the dynamical heterogeneity is similar to that of the nematic susceptibility measured by elastoresistance measurements. We argue that quenched random fields which couple to the nematic order give rise to a nematic glass that is reflected in the spin dynamics.Comment: Accepted to Physical Review

Equivalence after extension and Schur coupling do not coincide on essentially incomparable Banach spaces

In 1994, H. Bart and V. É. Tsekanovskii posed the question whether the Banach space operator relations matricial coupling (MC), equivalence after extension (EAE) and Schur coupling (SC) coincide, leaving only the implication EAE/MC => SC open. Despite several affirmative results, in this paper we show that the answer in general is no. This follows from a complete description of EAE and SC for the case that the operators act on essentially incomparable Banach spaces, which also leads to a new characterisation of the notion of essential incomparability. Concretely, the forward shift operators $U$ on $\ell$$^p$ and $V$ on $\ell$$^p$, for $1 ≤ p, q ≤ \infty, p ≠ q$, are EAE but not SC. As a corollary, SC is not transitive. Under mild assumptions, given $U$ and $V$ that are Atkinson or generalised invertible and EAE, we give a concrete operator $W$ that is SC to both $U$ and $V$, even if $U$ and $V$ are not SC themselves. Some further affirmative results for the case where the Banach spaces are isomorphic are also obtained

Accurate analytical modeling for switching energy of PiN diodes reverse recovery

PiN diodes are known to significantly contribute to switching energy as a result of reverse-recovery charge during turn-off. At high switching rates, the overlap between the high peak reserve-recovery current and the high peak voltage overshoot contributes to significant switching energy. The peak reverse-recovery current depends on the temperature and switching rate, whereas the peak diode voltage overshoot depends additionally on the stray inductance. Furthermore, the slope of the diode turn-off current is constant at high insulated-gate bipolar transistor (IGBT) switching rates and varies for low IGBT switching rates. In this paper, an analytical model for calculating PiN diode switching energy at different switching rates and temperatures is presented and validated by ultrafast and standard recovery diodes with different current ratings. Measurements of current commutation in IGBT/PiN diode pairs have been made at different switching rates and temperatures and used to validate the model. It is shown here that there is an optimal switching rate to minimize switching energy. The model is able to correctly predict the switching rate and temperature dependence of the PiN diode switching energies for different devices

Analytical modeling of switching energy of silicon carbide Schottky diodes as functions of dIDS/dt and temperature

SiC Schottky Barrier diodes (SiC SBD) are known to oscillate/ring in the output terminal when used as free-wheeling diodes in voltage-source converters. This ringing is due to RLC resonance among the diode capacitance, parasitic resistance, and circuit stray inductance. In this paper, a model has been developed for calculating the switching energy of SiC diodes as a function of the switching rate (dIDS/dt of the commutating SiC MOSFET) and temperature. It is shown that the damping of the oscillations increases with decreasing temperature and decreasing dIDS/dt. This in turn determines the switching energy of the diode, which initially decreases with decreasing dIDS/dt and subsequently increases with decreasing dIDS/dt thereby indicating an optimal dIDS/dt for minimum switching energy. The total switching energy of the diode can be subdivided into three phases namely the current switching phase, the voltage switching phase, and the ringing phase. Although the switching energy in the current switching phase decreases with increasing switching rate, the switching energy of the voltage and ringing phase increases with the switching rate. The model developed characterizes the dependence of diode's switching energy on temperature and dIDS/dt, hence, can be used to predict the behavior of the SiC SBD

The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs

Silicon carbide Schottky barrier diodes (SiC-SBDs) are prone to electromagnetic oscillations in the output characteristics. The oscillation frequency, peak voltage overshoot, and damping are shown to depend on the ambient temperature and the metal-oxide- semiconductor field-effect transistor (MOSFET) switching rate (dIDS/dt). In this paper, it is shown experimentally and theoretically that dIDS/dt increases with temperature for a given gate resistance during MOSFET turn-on and reduces with increasing temperature during turn-off. As a result, the oscillation frequency and peak voltage overshoot of the SiC-SBD increases with temperature during diode turn-off. This temperature dependence of the diode ringing reduces at higher dIDS/dt and increases at lower dIDS/dt. It is also shown that the rate of change of dIDS/dt with temperature (d2IDS/dtdT) is strongly dependent on RG and using fundamental device physics equations, this behavior is predictable. The dependence of the switching energy on dIDS/dt and temperature in 1.2-kV SiC-SBDs is measured over a wide temperature range (-75 °C to 200 °C). The diode switching energy analysis shows that the losses at low dIDS/dt are dominated by the transient duration and losses at high dIDS/dt are dominated by electromagnetic oscillations. The model developed and results obtained are important for predicting electromagnetic interference, reliability, and losses in SiC MOSFET/SBDs

Kondo physics in the algebraic spin liquid

We study Kondo physics in the algebraic spin liquid, recently proposed to describe $ZnCu_{3}(OH)_{6}Cl_{2}$ [Phys. Rev. Lett. {\bf 98}, 117205 (2007)]. Although spin dynamics of the algebraic spin liquid is described by massless Dirac fermions, this problem differs from the Pseudogap Kondo model, because the bulk physics in the algebraic spin liquid is governed by an interacting fixed point where well-defined quasiparticle excitations are not allowed. Considering an effective bulk model characterized by an anomalous critical exponent, we derive an effective impurity action in the slave-boson context. Performing the large-$N_{\sigma}$ analysis with a spin index $N_{\sigma}$, we find an impurity quantum phase transition from a decoupled local-moment state to a Kondo-screened phase. We evaluate the impurity spin susceptibility and specific heat coefficient at zero temperature, and find that such responses follow power-law dependencies due to the anomalous exponent of the algebraic spin liquid. Our main finding is that the Wilson's ratio for the magnetic impurity depends strongly on the critical exponent in the zero temperature limit. We propose that the Wilson's ratio for the magnetic impurity may be one possible probe to reveal criticality of the bulk system

Improved electrothermal ruggedness in SiC MOSFETs compared with silicon IGBTs

A 1.2-kV/24-A SiC-MOSFET and a 1.2-kV/30-A Si-Insulated gate bipolar transistor (IGBT) have been electrothermally stressed in unclamped inductive switching conditions at different ambient temperatures ranging from -25 °C to 125 °C. The devices have been stressed with avalanche currents at their rated currents and 40% higher. The activation of the parasitic bipolar junction transistor (BJT) during avalanche mode conduction results from the increased body resistance causing a voltage drop between the source and body, greater than the emitter-base voltage of the parasitic BJT. Because the BJT current and temperature relate through a positive feedback mechanism, thermal runaway results in the destruction of the device. It is shown that the avalanche power sustained before the destruction of the device increases as the ambient temperature decreases. SiC MOSFETs are shown to be able to withstand avalanche currents equal to the rated forward current at 25 °C, whereas IGBTs cannot sustain the same electrothermal stress. SiC MOSFETs are also shown to be capable of withstanding avalanche currents 40% above the rated forward current though only at reduced temperatures. An electrothermal model has been developed to explain the temperature dependency of the BJT latchup, and the results are supported by finite-element models