1,117 research outputs found
Effect of Carbon-Doping in Bulk Superconducting MgB2 Samples
Bulk superconducting samples of MgB2 were prepared by solid state reaction of
stoichiometric quantities of Mg turnings and B in a sealed Ta cylinder at 890 C
for 2 hours. The as-synthesized MgB2 samples had a Tc of 39 K, as defined as
the onset of diamagnetism. The crystal symmetry was found to be hexagonal with
lattice parameters, a=3.0856 A, and c=3.5199 A, similar to the literature
values. To study the effect of carbon doping in MgB2, various C-containing
samples of x varying from 0 to 1.00 in MgB2-xCx were prepared. Magnetic
characterizations indicate that the Tc onset is same for pure and C-doped
samples for x = 0.05, and 0.10. However, the shielding signal decreased
monotonically with C content, apparently due to the presence of carbon on the
grain boundaries that isolates grains and prevents flow of supercurrents on the
perimeter.Comment: 10 pages, 3 figure
Superconducting gap parameters of MgB2 obtained on MgB2/Ag and MgB2/In junctions
MgB2 superconducting wires with critical temperature Tc approaching 40 K were
used for preparation of MgB2/Ag and MgB2/In junctions. The differential
conductance vs. voltage characteristics of N-S junctions exhibit clear
contribution of Andreev reflection. Using modified BTK theory for s-wave
superconductors two order parameters 4 meV and 2.6 meV have been determined
from temperature dependencies. Surprisingly, larger order parameter vanishes at
lower temperature ~20 K than smaller one with Tc 38 K. Both the magnitudes of
the order parameters and their critical temperatures are in good agreement with
theoretical calculations of electron-phonon coupling in MgB carried out by
Liu et al.Comment: revised manuscrip
Flow and acoustic characteristics of subsonic and supersonic jets from convergent nozzle
Acoustic and flow characteristics of subsonic and supersonic jets from convergent nozzle
Temperature- and magnetic-field-dependent resistivity of MgB2 sintered at high temperature and high pressure condition
We report the temperature- and magnetic-field-dependent resistivity of MgB2
sintered at high temperature and high pressure condition. The superconducting
transition width for the resistivity measurement was about 0.4 K, and the
low-field magnetization showed a sharp superconducting transition with a
transition width of about 1 K. The resistivity in the normal state roughly
followed T^2 behavior with smaller residual resistivity ratio (RRR) of 3 over
broad temperature region above 100 K rather than reported T^3 behavior with
larger RRR value of ~ 20 in the samples made at lower pressures. Also, the
resistivity did not change appreciably with the applied magnetic field, which
was different from previous report. These differences were discussed with the
microscopic and structural change due to the high-pressure sintering.Comment: 2 pages, 3 figures. Accepted by Physica
MgB2 conductors for dc and ac applications
The paper presents discussion on up to date results on MgB2 conductors from
the point of view of their future dc and ac applications. Basic physical
parameters of MgB2 compound relevant to conductors are introduced. Different
conductor preparation methods and conductor architectures are presented and
attainable critical current densities discussed. Some numerical results on
critical currents and ac losses of future multifilamentary MgB2 conductors with
magnetic cladding of their filaments are given. Recently observed anomalous
decrease of ac susceptibility at 50 K in copper clad Powder-in-tube, PIT, MgB2
wires is presented.Comment: Paper presented at EUCAS'01 conference, Copenhagen, 26-30 August 200
Synthesis of as-grown superconducting MgB_2 thin films by molecular beam epitaxy in UHV conditions
As-grown superconducting MgB_2 thin films have been grown on SrTiO_3(001),
MgO(001), and Al_2O_3(0001) substrates by a molecular beam epitaxy (MBE) method
with novel co-evaporation conditions of low deposition rate in ultra-high
vacuum. The structural and physical properties of the films were studied by
RHEED, XRD, electrical resistivity measurements, and SQUID magnetometer. The
RHEED patterns indicate three-dimensional growth for MgB_2. The highest T_c
determined by resistivity measurement was about 36K in these samples. And a
clear Meissner effect below T_c was observed using magnetic susceptibility
measurement. We will discuss the influence of B buffer layer on the structural
and physical properties.Comment: 9 pages with 4 figures, ISS2003 proceedin
Substitution induced pinning in MgB_2 superconductor doped with SiC nano-particles
By doping MgB_2 superconductor with SiC nano-particles, we have successfully
introduced pinning sites directly into the crystal lattice of MgB_2 grains
(intra-grain pinning). It became possible due to the combination of
counter-balanced Si and C co-substitution for B, leading to a large number of
intra-granular dislocations and the dispersed nano-size impurities induced by
the substitution. The magnetic field dependence of the critical current density
was significantly improved in a wide temperature range, whereas the transition
temperature in the sample MgB_2(SiC)_x having x = 0.34, the highest doping
level prepared, dropped only by 2.6 K.Comment: 4 pages, 6 figure
Superconducting magnesium diboride films with Tc \approx 24K grown by pulsed laser deposition with in-situ anneal
Thin superconducting films of magnesium diboride (MgB2) with Tc \approx 24K
were prepared on various oxide substrates by pulsed laser deposition (PLD)
followed by an in-situ anneal. A systematic study of the influence of various
in-situ annealing parameters shows an optimum temperature of about 600C in a
background of 0.7 atm. of Ar/4%H2 for layers consisting of a mixture of
magnesium and boron. Contrary to ex-situ approaches (e.g. reacting boron films
with magnesium vapor at 900C), these films are processed below the
decomposition temperature of MgB2. This may prove enabling in the formation of
multilayers, junctions, and epitaxial films in future work. Issues related to
the improvement of these films and to the possible in-situ growth of MgB2 at
elevated temperature are discussed.Comment: 5 pages, 4 figure
Electronic Structures of CaAlSi with Different Stacking AlSi Layers by First-Principles Calculations
The full-potential linear augmented plane-wave calculations have been applied
to investigate the systematic change of electronic structures in CaAlSi due to
different stacking sequences of AlSi layers. The present ab-initio calculations
have revealed that the multistacking, buckling and 60 degrees rotation of AlSi
layer affect the electronic band structure in this system. In particular, such
a structural perturbation gives rise to the disconnected and cylindrical Fermi
surface along the M-L lines of the hexagonal Brillouin zone. This means that
multistacked CaAlSi with the buckling AlSi layers increases degree of
two-dimensional electronic characters, and it gives us qualitative
understanding for the quite different upper critical field anisotropy between
specimens with and without superstructure as reported previously.Comment: 4 pages, 4 figures, to be published in J. Phys. Soc. Jp
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