Quantum wells, wires and dots with finite barrier: analytical expressions for the bound states

From a careful study of the transcendental equations fulfilled by the bound state energies of a free particle in a quantum well, cylindrical wire or spherical dot with finite potential barrier, we have derived analytical expressions of these energies which reproduce impressively well the numerical solutions of the corresponding transcendental equations for all confinement sizes and potential barriers, without any adjustable parameter. These expressions depend on a unique dimensionless parameter which contains the barrier height and the sphere, wire or well radius.Comment: 4 pages, 3 figure

“Where’s Wally?” Identifying theory of mind in school-based social skills interventions

This mini configurative review links theory of mind (ToM) research with school-based social skills interventions to reframe theoretical understanding of ToM ability based on a conceptual mapping exercise. The review's aim was to bridge areas of psychology and education concerned with social cognition. Research questions included: how do dependent variables (DVs) in interventions designed to enhance child social-cognitive skills map onto ToM constructs empirically validated within psychology? In which ways do these mappings reframe conceptualization of ToM ability? Thirty-one studies (conducted from 2012 to 2019) on social-cognitive skill with typically-developing children ages 3-11 were included as opposed to explicit ToM trainings in light of an identified performance plateau on ToM tasks in children. Intervention DVs mapped onto the following ToM constructs in at least 87% of studies: "Representation of Others and/or Self," "Knowledge/Awareness of Mental States," "Attributions/Explanations of Mental States," "Social Competence," "Predicting Behavior," and "Understanding Complex Social Situations." The absence of false-belief understanding as an intervention DV indicated a lack of direct training in ToM ability. A hierarchy to further organize the review's ToM framework constructs as either skills or competences within the construct of 'Representation of Others and/or Self' is proposed. Implications for the conceptualization of ToM and social-cognitive research as well as educational practice are discussed, namely how school social skill interventions conceptualize skill along a continuum in contrast to the common artificial dichotomous assessment of ToM skill (i.e., presence or lack), yet the development of ToM can nevertheless be supported by the school environment

Electron transport in sub-micron GaAs channels at 300 K

Transient velocity-field characteristics have been computed for GaAs channels having lengths of 0.1, 0.2, 0.5, 1, and 20 µm for electric fields between 1 and 50 kV/cm at 300 K. The results are compared with earlier calculations and the significant features of the computed results are discussed. It is found that the electron motion for all channel lengths and for all fields is significantly affected by collisions. The threshold field for negative differential mobility increases, and the magnitude of the differential mobility decreases with decrease in the length of the sample. The maximum steady-state velocity increases with decrease in the length and may be as high as 5.4×107 cm/s for 0.1 µm samples

Position dependence of average electron velocity in a submicrometer GaAs channel

The Monte Carlo method has been applied to obtain the average electron velocity at different positions of a submicrometer GaAs channel in the presence of a position independent electric field. Velocity-distance curves are presented for channel lengths of 0.1, 0.2, and 0.5 µm and for lattice temperatures of 300 and 77 K. The curves show significant effects of collisions and boundary conditions

Auto-correlation of velocity-fluctuations and frequency-dependent diffusion constant for hot electrons

A method has been developed for determining the auto-correlation functions of the fluctuations in the transverse and the parallel components of hot carrier-velocity in a semiconductor by Monte Carlo simulation. The functions for electrons in InSb are determined by this method for applied electric fields of 50 V/cm, 75 V/cm, and 100 V/cm. With increasing value of the time interval the transverse auto-correlation function falls nearly exponentially to zero, but the parallel function falls sharply to a negative peak, then rises to positive values and finally becomes zero. The interval beyond which the auto-correlation function is zero and the correlation time are also evaluated. The correlation time is found to be approximately 1.6 times the relaxation time calculated from the chord mobility. The effect of the flight sampling time on the value of variance of the displacement, is investigated in terms of the low frequency diffusion constants, determined from the variation of the correlation functions. It is found that the diffusion constants become independent of the sampling time if it is of the order of one hundred times the relaxation time. The frequency-dependent diffusion constants are calculated from the correlation functions. The transverse diffusion constant falls monotonically with frequency for all the field strengths studied. The parallel diffusion constant has similar variation for the lower fields (50 V/cm and 75 V/cm) but it has a peak at about 44 GHz for the field of 100 V/cm

Velocity auto-correlation and hot-electron diffusion constant in GaAs and InP

Auto-correlation functions of the fluctuations in the electron velocities transverse and parallel to the applied electric field are calculated by the Monte Carlo method for GaAs and InP at three different values of field strength which are around three times the threshold field for negative differential mobility in each case. From these the frequency-dependent diffusion coefficients transverse and parallel to the applied field and the figure of merit for noise performance when used in a microwave amplifying device are determined. The results indicate that the transverse auto-correlation function C t (s) falls nearly exponentially to zero with increasing intervals while the parallel function C p (s) falls sharply, attains a minimum and then rises towards zero. In each case a higher field gives a higher rate of fall and makes the correlation functions zero within a shorter interval. The transverses diffusion coefficient falls monotonically with the frequency but the parallel diffusion coefficient generally starts with a low value at low frequencies, rises to a maximum and then falls. InP, with a larger separation between the central and the satellite valleys, has a higher value of the low frequency transverse diffusion coefficient and a lower value of its parallel counterpart. The noise performance of microwave semiconductor amplifying devices depends mainly on the low frequency parallel diffusion constant and consequently devices made out of materials like InP with a large separation between valleys are likely to have better noise characteristics

Hot electron diffusion in CdTe

The parallel and transverse components of diffusion constants of electrons in CdTe have been computed for fields of 30, 40, and 50 kV/cm using the Monte Carlo method. Results are presented for the velocity autocorrelation function and for the ac diffusion constants for two models of energy band structure and scattering constants, used earlier in the literature. The diffusion constants as obtained from the two models are significantly different, but none are in agreement with the available experimental results

Coenzyme Q10 deficiencies: pathways in yeast and humans.

Coenzyme Q (ubiquinone or CoQ) is an essential lipid that plays a role in mitochondrial respiratory electron transport and serves as an important antioxidant. In human and yeast cells, CoQ synthesis derives from aromatic ring precursors and the isoprene biosynthetic pathway. Saccharomyces cerevisiae coq mutants provide a powerful model for our understanding of CoQ biosynthesis. This review focusses on the biosynthesis of CoQ in yeast and the relevance of this model to CoQ biosynthesis in human cells. The COQ1-COQ11 yeast genes are required for efficient biosynthesis of yeast CoQ. Expression of human homologs of yeast COQ1-COQ10 genes restore CoQ biosynthesis in the corresponding yeast coq mutants, indicating profound functional conservation. Thus, yeast provides a simple yet effective model to investigate and define the function and possible pathology of human COQ (yeast or human gene involved in CoQ biosynthesis) gene polymorphisms and mutations. Biosynthesis of CoQ in yeast and human cells depends on high molecular mass multisubunit complexes consisting of several of the COQ gene products, as well as CoQ itself and CoQ intermediates. The CoQ synthome in yeast or Complex Q in human cells, is essential for de novo biosynthesis of CoQ. Although some human CoQ deficiencies respond to dietary supplementation with CoQ, in general the uptake and assimilation of this very hydrophobic lipid is inefficient. Simple natural products may serve as alternate ring precursors in CoQ biosynthesis in both yeast and human cells, and these compounds may act to enhance biosynthesis of CoQ or may bypass certain deficient steps in the CoQ biosynthetic pathway