359 research outputs found
Epitaxial growth and transport properties of Nb-doped SrTiO thin films
Nb-doped SrTiO epitaxial thin films have been prepared on (001)
SrTiO substrates using pulsed laser deposition. A high substrate
temperature () was found to be necessary to achieve
2-dimensional growth. Atomic force microscopy reveals atomically flat surfaces
with 3.9 \AA steps. The films show a metallic behavior, residual
resistivity ratios between 10 and 100, and low residual resistivity of the
order of 10cm. At 0.3 K, a sharp superconducting transition,
reaching zero resistance, is observed.Comment: 4 pages, 4 figure
Gradual Disappearance of the Fermi Surface near the Metal-Insulator Transition in LaSrMnO
We report the first observation of changes in the electronic structure of
LaSrMnO (LSMO) across the filling-control metal-insulator
(MI) transition by means of in situ angle-resolved photoemission spectroscopy
(ARPES) of epitaxial thin films. The Fermi surface gradually disappears near
the MI transition by transferring the spectral weight from the coherent band
near the Fermi level () to the lower Hubbard band, whereas a pseudogap
behavior also exists in the ARPES spectra in the close vicinity of for
the metallic LSMO. These results indicate that the spectral weight transfer
derived from strong electron-electron interaction dominates the gap formation
in LSMO associated with the filling-control MI transition.Comment: 11 pages, 4 figure
In-situ photoemission study of Pr_{1-x}Ca_xMnO_3 epitaxial thin films with suppressed charge fluctuations
We have performed an {\it in-situ} photoemission study of Pr_{1-x}Ca_xMnO_3
(PCMO) thin films grown on LaAlO_3 (001) substrates and observed the effect of
epitaxial strain on the electronic structure. We found that the chemical
potential shifted monotonically with doping, unlike bulk PCMO, implying the
disappearance of incommensurate charge fluctuations of bulk PCMO. In the
valence-band spectra, we found a doping-induced energy shift toward the Fermi
level (E_F) but there was no spectral weight transfer, which was observed in
bulk PCMO. The gap at E_F was clearly seen in the experimental band dispersions
determined by angle-resolved photoemission spectroscopy and could not be
explained by the metallic band structure of the C-type antiferromagnetic state,
probably due to localization of electrons along the ferromagnetic chain
direction or due to another type of spin-orbital ordering.Comment: 5 pages, 4 figure
Ion induced quark-gluon implosion
We investigate nuclear fragmentation in the central proton-nucleus and
nucleus - nucleus collisions at the energies of LHC. We argue that within the
semi-classical approximation because of fast increase with energy of cross
sections of soft and hard interactions each nucleon is stripped in the average
process off ``soft'' partons and fragments into a collection of leading quarks
and gluons with large . Valence quarks and gluons are streaming in the
opposite directions when viewed in the c.m. of the produced system. The
resulting pattern of the fragmentation of the colliding nuclei leads to an
implosion of the quark and gluon constituents of the nuclei. The matter density
produced at the initial stage in the nucleus fragmentation region is estimated
to be 50 GeV/fm at the LHC energies and probably 10
GeV/fm at RHIC.Comment: 5 pages, final version, discussion of the signals of the new phase is
expande
Spin-filter tunnel junction with matched Fermi surfaces
Efficient injection of spin-polarized current into a semiconductor is a basic
prerequisite for building semiconductor-based spintronic devices. Here, we use
inelastic electron tunneling spectroscopy to show that the efficiency of
spin-filter-type spin injectors is limited by spin scattering of the tunneling
electrons. By matching the Fermi-surface shapes of the current injection source
and target electrode material, spin injection efficiency can be significantly
increased in epitaxial ferromagnetic insulator tunnel junctions. Our results
demonstrate that not only structural but also Fermi-surface matching is
important to suppress scattering processes in spintronic devices.Comment: 5 pages, 4 figure
High Throughput Oxide Lattice Engineering by Parallel Laser Molecular Beam Epitaxy and Concurrent X-ray Diffraction
A novel laser molecular beam epitaxy (LMBE) system for the fabrication of
atomically controlled oxides superlattices and an x-ray diffractometer that
measures spatially-resolved x-ray diffraction spectra have been developed based
on the concept of combinatorial methodology. The LMBE chamber has two moving
masks, an automated target stage, a substrate heating laser, and an in-situ
scanning reflection high-energy electron diffraction system. The x-ray
diffractometer with a curved monochromator and two-dimensional detector is used
for rapid concurrent x-ray diffraction intensity mapping with the two axes of
the detector corresponding to the diffraction angle and a position in the
sample.Comment: 19pages, 9figure
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