Structural properties of impact ices accreted on aircraft structures

The structural properties of ice accretions formed on aircraft surfaces are studied. The overall objectives are to measure basic structural properties of impact ices and to develop finite element analytical procedures for use in the design of all deicing systems. The Icing Research Tunnel (IRT) was used to produce simulated natural ice accretion over a wide range of icing conditions. Two different test apparatus were used to measure each of the three basic mechanical properties: tensile, shear, and peeling. Data was obtained on both adhesive shear strength of impact ices and peeling forces for various icing conditions. The influences of various icing parameters such as tunnel air temperature and velocity, icing cloud drop size, material substrate, surface temperature at ice/material interface, and ice thickness were studied. A finite element analysis of the shear test apparatus was developed in order to gain more insight in the evaluation of the test data. A comparison with other investigators was made. The result shows that the adhesive shear strength of impact ice typically varies between 40 and 50 psi, with peak strength reaching 120 psi and is not dependent on the kind of substrate used, the thickness of accreted ice, and tunnel temperature below 4 C

Radiation resistance of Ge, Ge0.93Si0.07, GaAs and Al0.08Ga0.92 as solar cells

Solar cells made of Ge, Ge(0.93)Si(0.07) alloys, GaAs and Al(0.08)Ga(0.92)As were irradiated in two experiments with 1-meV electrons at fluences as great as 1 x 10(exp 16) cm(exp-2). Several general trends have emerged. Low-band-gap Ge and Ge(0.93)Si(0.07) cells show substantial resistance to radiation-induced damage. The two experiments showed that degradation is less for Al(0.08)Ga(0.92)As cells than for similarly irradiated GaAs cells. Compared to homojunctions, cells with graded-band-gap emitters did not show the additional resistance to damage in the second experiment that had been seen in the first. The thickness of the emitter is a key parameter to limit the degradation in GaAs devices

Observation of Fermi-energy dependent unitary impurity resonances in a strong topological insulator Bi_2Se_3 with scanning tunneling spectroscopy

Scanning tunneling spectroscopic studies of Bi_2Se_3 epitaxial films on Si (111) substrates reveal highly localized unitary impurity resonances associated with non-magnetic quantum impurities. The strength of the resonances depends on the energy difference between the Fermi level (E_F) and the Dirac point (E_D) and diverges as E_F approaches E_D. The Dirac-cone surface state of the host recovers within ~ 2Å spatial distance from impurities, suggesting robust topological protection of the surface state of topological insulators against high-density impurities that preserve time reversal symmetry

SAM 2 data user's guide

This document is intended to serve as a guide to the use of the data products from the Stratospheric Aerosol Measurement (SAM) 2 experiment for scientific investigations of polar stratospheric aerosols. Included is a detailed description of the Beta and Aerosol Number Density Archive Tape (BANAT), which is the SAM 2 data product containing the aerosol extinction data available for these investigations. Also included are brief descriptions of the instrument operation, data collection, processing and validation, and some of the scientific analyses conducted to date

Effective non-Markovian description of a system interacting with a bath

We study a harmonic system coupled to chain of first neighbor interacting oscillators. After deriving the exact dynamics of the system, we prove that one can effectively describe the exact dynamics by considering a suitable shorter chain. We provide the explicit expression for such an effective dynamics and we provide an upper bound on the error one makes considering it instead of the dynamics of the full chain. We eventually prove how error, timescale and number of modes in the truncated chain are related