Heterostructure unipolar spin transistors

We extend the analogy between charge-based bipolar semiconductor electronics and spin-based unipolar electronics by considering unipolar spin transistors with different equilibrium spin splittings in the emitter, base, and collector. The current of base majority spin electrons to the collector limits the performance of ``homojunction'' unipolar spin transistors, in which the emitter, base, and collector all are made from the same magnetic material. This current is very similar in origin to the current of base majority carriers to the emitter in homojunction bipolar junction transistors. The current in bipolar junction transistors can be reduced or nearly eliminated through the use of a wide band gap emitter. We find that the choice of a collector material with a larger equilibrium spin splitting than the base will similarly improve the device performance of a unipolar spin transistor. We also find that a graded variation in the base spin splitting introduces an effective drift field that accelerates minority carriers through the base towards the collector.Comment: 9 pages, 2 figure

Strong spin relaxation length dependence on electric field gradients

We discuss the influence of electrical effects on spin transport, and in particular the propagation and relaxation of spin polarized electrons in the presence of inhomogeneous electric fields. We show that the spin relaxation length strongly depends on electric field gradients, and that significant suppression of electron spin polarization can occur as a result thereof. A discussion in terms of a drift-diffusion picture, and self-consistent numerical calculations based on a Boltzmann-Poisson approach shows that the spin relaxation length in fact can be of the order of the charge screening length.Comment: 4 pages, 3 figures, to be presented at PASPSI