358 research outputs found

    Structural trends from a consistent set of single-crystal data of REFeAsO (RE = La, Ce, Pr, Nd, Sm, Gd, and Tb)

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    A new crystal growth technique for single-crystals of REFeAsO (RE = La, Ce, Pr, Nd, Sm, Gd, and Tb) using NaI/KI as flux is presented. Crystals with a size up to 300 μ\mum were isolated for single-crystal X-ray diffraction measurements. Lattice parameters were determined by LeBail fits of X-ray powder data against LaB6 standard. A consistent set of structural data is obtained and interpreted in a hard-sphere model. Effective radii for the rare-earth metal atoms for REFeAsO are deduced. The relation of the intra- and inter-plane distances of the arsenic atoms is identified as limiter of the phase formation, and its influence on Tc is discussed.Comment: 8 pages, 11 figures, 3 tables, fig. 6 changed to numerical plot, minor changes to the text, accepted for publication in PR

    Anisotropic electrical resistivity of LaFeAsO: evidence for electronic nematicity

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    Single crystals of LaFeAsO were successfully grown out of KI flux. Temperature dependent electrical resistivity was measured with current flow along the basal plane, \rho_perpend(T), as well as with current flow along the crystallographic c-axis, \rho_parallel(T), the latter one utilizing electron beam lithography and argon ion beam milling. The anisotropy ratio was found to lie between \rho_parallel/\rho_perpend = 20 - 200. The measurement of \rho_perpend(T) was performed with current flow along the tetragonal [1 0 0] direction and along the [1 1 0] direction and revealed a clear in-plane anisotropy already at T \leq 175 K. This is significantly above the orthorhombic distortion at T_0 = 147 K and indicates the formation of an electron nematic phase. Magnetic susceptibility and electrical resistivity give evidence for a change of the magnetic structure of the iron atoms from antiferromagnetic to ferromagnetic arrangement along the c-axis at T^\ast = 11 K.Comment: 10 pages, 6 figures, minor change

    Electron spin resonance and ferromagnetic resonance spectroscopy in the high-field phase of the van der Waals magnet CrCl3_3

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    We report a comprehensive high-field/high-frequency electron spin resonance (ESR) study on single crystals of the van der Waals magnet CrCl3_3. This material, although being known for quite a while, has received recent significant attention in a context of the use of van der Waals magnets in novel spintronic devices. Temperature-dependent measurements of the resonance fields were performed between 4 and 175 K and with the external magnetic field applied parallel and perpendicular to the honeycomb planes of the crystal structure. These investigations reveal that the resonance line shifts from the paramagnetic resonance position already at temperatures well above the transition into a magnetically ordered state. Thereby the existence of ferromagnetic short-range correlations above the transition is established and the intrinsically two-dimensional nature of the magnetism in the title compound is proven. To study details of the magnetic anisotropies in the field-induced effectively ferromagnetic state at low temperatures, frequency-dependent ferromagnetic resonance (FMR) measurements were conducted at 4 K. The observed anisotropy between the two magnetic-field orientations is analyzed by means of numerical simulations based on a phenomenological theory of FMR. These simulations are in excellent agreement with measured data if the shape anisotropy of the studied crystal is taken into account, while the magnetocrystalline anisotropy is found to be negligible in CrCl3_3. The absence of a significant intrinsic anisotropy thus renders this material as a practically ideal isotropic Heisenberg magnet.Comment: 9 pages, 5 figures, accepted in Physical Review Material

    Electrical resistivity and tunneling anomalies in CeCuAs2

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    The compound CeCuAs2 is found to exhibit negative temperature (T) coefficient of electrical resistivity (rho) under ambient pressure conditions in the entire T-range of investigation (45 mK to 300 K), even in the presence of high magnetic fields. Preliminary tunneling spectroscopic measurements indicate the existence of a psuedo-gap at least at low temperatures, thereby implying that this compound could be classified as a Kondo semi-conductor, though rho(T) interestingly is not found to be of an activated type.Comment: To appear in the proceedings of SCES200

    Tetragonal to Orthorhombic Transition of GdFeAsO Studied by Single-Crystal Synchrotron X-Ray Diffraction

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    A study of the tetragonal to orthorhombic phase transition of GdFeAsO is presented. Planes of the reciprocal space were reconstructed form single-crystal synchrotron X-ray diffraction data. By cooling below the structural transition temperature splitting of the Bragg reflections was observed corresponding to four different twin domain orientations. A model was developed to quantify the distortion of the lattice from the position of the splitted reflections relative to each other. Constrained 2D-Cauchy fits of several splitted reflections provided positions of the reflections. The influence of the structural distortion was detectable already above the structural transition temperature hinting at fluctuations in the tetragonal phase.Comment: 6 pages, 6 figure

    Enhanced electrical resistivity before N\'eel order in the metals, RCuAs2_2 (R= Sm, Gd, Tb and Dy

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    We report an unusual temperature (T) dependent electrical resistivity(ρ\rho) behavior in a class of ternary intermetallic compounds of the type RCuAs2_2 (R= Rare-earths). For some rare-earths (Sm, Gd, Tb and Dy) with negligible 4f-hybridization, there is a pronounced minimum in ρ\rho(T) far above respective N\'eel temperatures (TN_N). However, for the rare-earths which are more prone to exhibit such a ρ\rho(T) minimum due to 4f-covalent mixing and the Kondo effect, this minimum is depressed. These findings, difficult to explain within the hither-to-known concepts, present an interesting scenario in magnetism.Comment: Physical Review Letters (accepted for publication
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