Inelastic relaxation and noise temperature in S/N/S junctions

We studied electronic relaxation in long diffusive superconductor / normal metal / superconductor (S/N/S) junctions by means of current noise and transport measurements down to very low temperature (100mK). Samples with normal metal lengths of 4, 10 and 60 micrometer have been investigated. In all samples the shot noise increases very rapidly with the voltage. This is interpreted in terms of enhanced heating of the electron gas confined between the two S/N interfaces. Experimental results are analyzed quantitatively taking into account electron-phonon interaction and heat transfer through the S/N interfaces. Transport measurements reveal that in all samples the two S/N interfaces are connected incoherently, as shown by the reentrance of the resistance at low temperature. The complementarity of noise and transport measurements allows us to show that the energy dependence of the reentrance at low voltage is essentially due to the increasing effective temperature of the quasiparticles in the normal metal.Comment: 5 pages, 4 figures, to be published in EPJ

Self-phase modulation of a single-cycle terahertz pulse by nonlinear free-carrier response in a semiconductor

We demonstrate the self-phase modulation (SPM) of a single-cycle THz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the THz pulse, leading to an ultrafast reduction of the plasma frequency, and hence to a strong modification of the THz-range dielectric function of the material. THz SPM is observed directly in the time domain. In the frequency domain it corresponds to a strong frequency-dependent refractive index nonlinearity of n-GaAs, found to be both positive and negative within the broad THz pulse spectrum, with the zero-crossing point defined by the electron momentum relaxation rate. We also observed the nonlinear spectral broadening and compression of the THz pulse.Comment: 5 pages, 6 figure

Semiconductor saturable absorbers for ultrafast THz signals

We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band nonparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and non-saturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse shortening, and an increase of the group refractive index of the samples at higher THz pulse peak fields.Comment: Submitted to Appl. Phys. Lett

Structuring of sapphire by laser-assisted methods, ion-beam implantation, and chemical wet etching

Sapphire is an attractive material for micro- and opto-electronic systems applications because of its excellent mechanical and chemical properties. However, because of its hardness, sapphire is difficult to machine. Titanium-doped sapphire is a well-known broadly tunable and short-pulse laser material and a promising broadband light source for applications in low-coherence interferometry. We investigated several methods to fabricate rib structures in sapphire that can induce channel waveguiding in Ti:sapphire planar waveguides. These methods include direct laser ablation, laser-micromachined polyimide stripes, selective reactive ion etching, and ion-beam implantation followed by chemical wet etching. Depending on the method, we fabricated channels with depths of up to 1.5 µm. We will discuss and compare these methods. Reactive ion etching through laser-structured polyimide contact-masks has so far provided the best results in terms of etching speed and roughness of the etched structures

Mesoscopic transition in the shot noise of diffusive S/N/S junctions

We experimentally investigated the current noise in diffusive Superconductor/Normal metal/Superconductor junctions with lengths between the superconducting coherence length xi_Delta and the phase coherence length L_Phi of the normal metal (xi_Delta < L < L_Phi). We measured the shot noise over a large range of energy covering both the regimes of coherent and incoherent multiple Andreev reflections. The transition between these two regimes occurs at the Thouless energy where a pronounced minimum in the current noise density is observed. Above the Thouless energy, in the regime of incoherent multiple Andreev reflections, the noise is strongly enhanced compared to a normal junction and grows linearly with the bias voltage. Semi-classical theory describes the experimental results accurately, when taking into account the voltage dependence of the resistance which reflects the proximity effect. Below the Thouless energy, the shot noise diverges with decreasing voltage which may indicate the coherent transfer of multiple charges.Comment: 5 pages, 5 figures, accepted for publication in Phys. Rev. B, Rapid Communicatio

Integrating across memory episodes: Developmental trends

Memory enables us to use information from our past experiences to guide new behaviours, calling for the need to integrate or form inference across multiple distinct episodic experiences. Here, we compared children (aged 9-10 years), adolescents (aged 12-13 years), and young adults (aged 19-25 years) on their ability to form integration across overlapping associations in memory. Participants first encoded a set of overlapping, direct AB- and BC-associations (object-face and face-object pairs) as well as non-overlapping, unique DE-associations. They were then tested on these associations and inferential AC-associations. The experiment consisted of four such encoding/retrieval cycles, each consisting of different stimuli set. For accuracy on both unique and inferential associations, young adults were found to outperform teenagers, who in turn outperformed children. However, children were particularly slower than teenagers and young adults in making judgements during inferential than during unique associations. This suggests that children may rely more on making inferences during retrieval, by first retrieving the direct associations, followed by making the inferential judgement. Furthermore, young adults showed a higher correlation between accuracy in direct (AB, BC) and inferential AC-associations than children. This suggests that, young adults relied closely on AB- and BC-associations for making AC decisions, potentially by forming integrated ABC-triplets during encoding or retrieval. Taken together, our findings suggest that there may be an age-related shift in how information is integrated across experienced episodes, namely from relying on making inferences at retrieval during middle childhood to forming integrated representations at different memory processing stages in adulthood

Doubled Full Shot Noise in Quantum Coherent Superconductor - Semiconductor Junctions

We performed low temperature shot noise measurements in Superconductor (TiN) - strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the conductance has a maximum due to coherent multiple reflections at low energy and that shot noise is then twice the Poisson noise (S=4eI). The shot noise changes to the normal value (S=2eI) due to a large quasiparticle contribution.Comment: published in Physical Review Letter