Heterogeneous dynamics of the three dimensional Coulomb glass out of equilibrium

The non-equilibrium relaxational properties of a three dimensional Coulomb glass model are investigated by kinetic Monte Carlo simulations. Our results suggest a transition from stationary to non-stationary dynamics at the equilibrium glass transition temperature of the system. Below the transition the dynamic correlation functions loose time translation invariance and electron diffusion is anomalous. Two groups of carriers can be identified at each time scale, electrons whose motion is diffusive within a selected time window and electrons that during the same time interval remain confined in small regions in space. During the relaxation that follows a temperature quench an exchange of electrons between these two groups takes place and the non-equilibrium excess of diffusive electrons initially present decreases logarithmically with time as the system relaxes. This bimodal dynamical heterogeneity persists at higher temperatures when time translation invariance is restored and electron diffusion is normal. The occupancy of the two dynamical modes is then stationary and its temperature dependence reflects a crossover between a low-temperature regime with a high concentration of electrons forming fluctuating dipoles and a high-temperature regime in which the concentration of diffusive electrons is high.Comment: 10 pages, 9 figure

On the structure of the energy distribution function in the hopping regime

The impact of the dispersion of the transport coefficients on the structure of the energy distribution function for charge carriers far from equilibrium has been investigated in effective-medium approximation for model densities of states. The investigations show that two regimes can be observed in energy relaxation processes. Below a characteristic temperature the structure of the energy distribution function is determined by the dispersion of the transport coefficients. Thermal energy diffusion is irrelevant in this regime. Above the characteristic temperature the structure of the energy distribution function is determined by energy diffusion. The characteristic temperature depends on the degree of disorder and increases with increasing disorder. Explicit expressions for the energy distribution function in both regimes are derived for a constant and an exponential density of states.Comment: 16 page

Manifestation of ageing in the low temperature conductance of disordered insulators

We are interested in the out of equilibrium phenomena observed in the electrical conductance of disordered insulators at low temperature, which may be signatures of the electron coulomb glass state. The present work is devoted to the occurrence of ageing, a benchmark phenomenon for the glassy state. It is the fact that the dynamical properties of a glass depend on its age, i.e. on the time elapsed since it was quench-cooled. We first critically analyse previous studies on disordered insulators and question their interpretation in terms of ageing. We then present new measurements on insulating granular aluminium thin films which demonstrate that the dynamics is indeed age dependent. We also show that the results of different relaxation protocols are related by a superposition principle. The implications of our findings for the mechanism of the conductance slow relaxations are then discussed

History-dependent relaxation and the energy scale of correlation in the Electron-Glass

We present an experimental study of the energy-relaxation in Anderson-insulating indium-oxide films excited far from equilibrium. In particular, we focus on the effects of history on the relaxation of the excess conductance dG. The natural relaxation law of dG is logarithmic, namely dG=-log(t). This may be observed over more than five decades following, for example, cool-quenching the sample from high temperatures. On the other hand, when the system is excited from a state S_{o} in which it has not fully reached equilibrium to a state S_{n}, the ensuing relaxation law is logarithmic only over time t shorter than the time t_{w} it spent in S_{o}. For times t>t_{w} dG(t) show systematic deviation from the logarithmic dependence. It was previously shown that when the energy imparted to the system in the excitation process is small, this leads to dG=P(t/t_{w}) (simple-aging). Here we test the conjecture that `simple-aging' is related to a symmetry in the relaxation dynamics in S_{o} and S_{n}. This is done by using a new experimental procedure that is more sensitive to deviations in the relaxation dynamics. It is shown that simple-aging may still be obeyed (albeit with a modified P(t/t_{w})) even when the symmetry of relaxation in S_{o} and S_{n} is perturbed by a certain degree. The implications of these findings to the question of aging, and the energy scale associated with correlations are discussed

Monte-Carlo Simulations of the Dynamical Behavior of the Coulomb Glass

We study the dynamical behavior of disordered many-particle systems with long-range Coulomb interactions by means of damage-spreading simulations. In this type of Monte-Carlo simulations one investigates the time evolution of the damage, i.e. the difference of the occupation numbers of two systems, subjected to the same thermal noise. We analyze the dependence of the damage on temperature and disorder strength. For zero disorder the spreading transition coincides with the equilibrium phase transition, whereas for finite disorder, we find evidence for a dynamical phase transition well below the transition temperature of the pure system.Comment: 10 pages RevTeX, 8 Postscript figure

Electronic transport in films of colloidal CdSe nanocrystals

We present results for electronic transport measurements on large three-dimensional arrays of CdSe nanocrystals. In response to a step in the applied voltage, we observe a power-law decay of the current over five orders of magnitude in time. Furthermore, we observe no steady-state dark current for fields up to 10^6 V/cm and times as long as 2x10^4 seconds. Although the power-law form of the decay is quite general, there are quantitative variations with temperature, applied field, sample history, and the material parameters of the array. Despite evidence that the charge injected into the film during the measurement causes the decay of current, we find field-scaling of the current at all times. The observation of extremely long-lived current transients suggests the importance of long-range Coulomb interactions between charges on different nanocrystals.Comment: 11 pages, 10 figure

Electric Field Effect in Ultrathin Films near the Superconductor-Insulator Transition

The effect of an electric field on the conductance of ultrathin films of metals deposited on substrates coated with a thin layer of amorphous Ge was investigated. A contribution to the conductance modulation symmetric with respect to the polarity of the applied electric field was found in regimes in which there was no sign of glassy behavior. For films with thicknesses that put them on the insulating side of the superconductor-insulator transition, the conductance increased with electric field, whereas for films that were becoming superconducting it decreased. Application of magnetic fields to the latter, which reduce the transition temperature and ultimately quench superconductivity, changed the sign of the reponse of the conductance to electric field back to that found for insulators. We propose that this symmetric response to capacitive charging is a consequence of changes in the conductance of the a-Ge layer, and is not a fundamental property of the physics of the superconductor-insulator transition as previously suggested.Comment: 4 pages text, 4 figure

Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements

We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers’ non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering

Electrical transport studies of quench condensed Bi films at the initial stage of film growth: Structural transition and the possible formation of electron droplets

The electrical transport properties of amorphous Bi films prepared by sequential quench deposition have been studied in situ. A superconductor-insulator (S-I) transition was observed as the film was made increasingly thicker, consistent with previous studies. Unexpected behavior was found at the initial stage of film growth, a regime not explored in detail prior to the present work. As the temperature was lowered, a positive temperature coefficient of resistance (dR/dT > 0) emerged, with the resistance reaching a minimum before the dR/dT became negative again. This behavior was accompanied by a non-linear and asymmetric I-V characteristic. As the film became thicker, conventional variable-range hopping (VRH) was recovered. We attribute the observed crossover in the electrical transport properties to an amorphous to granular structural transition. The positive dR/dT found in the amorphous phase of Bi formed at the initial stage of film growth was qualitatively explained by the formation of metallic droplets within the electron glass.Comment: 7 pages, 6 figure