Laser annealing of silicon on sapphire

Silicon-implanted silicon-on-sapphire wafers have been annealed by 50-ns pulses from a Q-switched Nd : YAG laser. The samples have been analyzed by channeling and by omega-scan x-ray double diffraction. After irradiation with pulses of a fluence of about 5 J cm^–2 the crystalline quality of the silicon layer is found to be better than in the as-grown state

Towards Weyl fermions on the lattice without artefacts

In spite of the breakthrough in non-perturbative chiral gauge theories during the last decade, the present formulation has stubborn artefacts. Independently of the fermion representation one is confronted with unwanted CP violation and infinitely many undetermined weight factors. Renormalization group identifies the culprit. We demonstrate the procedure on Weyl fermions in a real representation

SPLEND1D, a reduced one-dimensional model to investigate the physics of plasma detachment

Studying the process of divertor detachment and the associated complex interplay of plasma dynamics and atomic physics processes is of utmost importance for future fusion reactors. Whilst simplified analytical models exist to interpret the general features of detachment, they are limited in their predictive power, and complex 2D or even 3D codes are generally required to provide a self-consistent picture of the divertor. As an intermediate step, 1D models of the Scrape-Off Layer (SOL) can be particularly insightful as the dynamics are greatly simplified, while still self-consistently including various source and sink terms at play, as well as additional important effects such as flows. These codes can be used to shed light on the physics at play, to perform fast parameter scans, or to interpret experiments. In this paper, we introduce the SPLEND1D (Simulator of PLasma ENabling Detachment in 1D) code: a fast and versatile 1D SOL model. We present in detail the model that is implemented in SPLEND1D. We then employ the code to explore various elements of detachment physics for parameters typical of the Tokamak \`a Configuration Variable (TCV), including the atomic physics and other processes behind power and momentum losses, and explore the various hypotheses and free parameters of the model

Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

The effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots grown on GaAs is investigated with an atomistic valence-force-field model and an empirical tight-binding model. By comparing a dot with and without a wetting layer, we find that the inclusion of the wetting layer weakens the strain inside the dot by only 1% relative change, while it reduces the energy gap between a confined electron and hole level by as much as 10%. The small change in the strain distribution indicates that strain relaxes only little through the thin wetting layer. The large reduction of the energy gap is attributed to the increase of the confining-potential width rather than the change of the potential height. First-order perturbation calculations or, alternatively, the addition of an InAs disk below the quantum dot confirm this conclusion. The effect of the wetting layer on the wave function is qualitatively different for the weakly confined electron state and the strongly confined hole state. The electron wave function shifts from the buffer to the wetting layer, while the hole shifts from the dot to the wetting layer.Comment: 14 pages, 3 figures, and 3 table

OntoGene in BioCreative II

BACKGROUND: Research scientists and companies working in the domains of biomedicine and genomics are increasingly faced with the problem of efficiently locating, within the vast body of published scientific findings, the critical pieces of information that are needed to direct current and future research investment. RESULTS: In this report we describe approaches taken within the scope of the second BioCreative competition in order to solve two aspects of this problem: detection of novel protein interactions reported in scientific articles, and detection of the experimental method that was used to confirm the interaction. Our approach to the former problem is based on a high-recall protein annotation step, followed by two strict disambiguation steps. The remaining proteins are then combined according to a number of lexico-syntactic filters, which deliver high-precision results while maintaining reasonable recall. The detection of the experimental methods is tackled by a pattern matching approach, which has delivered the best results in the official BioCreative evaluation. CONCLUSION: Although the results of BioCreative clearly show that no tool is sufficiently reliable for fully automated annotations, a few of the proposed approaches (including our own) already perform at a competitive level. This makes them interesting either as standalone tools for preliminary document inspection, or as modules within an environment aimed at supporting the process of curation of biomedical literature

Valley splitting in strained silicon quantum wells

A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing architectures. The valley splitting is computed for realistic devices using the quantitative nanoelectronic modeling tool NEMO. A simple, analytically solvable tight-binding model is developed, it yields much physical insight, and it reproduces the behavior of the splitting in the NEMO results. The splitting is in general nonzero even in the absence of electric field in contrast to previous works. The splitting in a square well oscillates as a function of S, the number of layers in the quantum well, with a period that is determined by the location of the valley minimum in the Brillouin zone. The envelope of the splitting decays as $S^3$. Finally the feasibility of observing such oscillations experimentally in modern Si/SiGe heterostructures is discussed.Comment: 19 pages, including 4 figure

Mechanochemical synthesis and high temperature thermoelectric properties of calcium-doped lanthanum telluride La_(3−x)Ca_xTe_4

The thermoelectric properties from 300–1275 K of calcium-doped La_(3−x)Te_4 are reported. La_(3−x)Te_4 is a high temperature n-type thermoelectric material with a previously reported zT_(max) 1.1 at 1273 K and x = 0.23. Computational modeling suggests the La atoms define the density of states of the conduction band for La_(3−x)Te_4. Doping with Ca^(2+) on the La^(3+) site is explored as a means of modifying the density of states to improve the power factor and to achieve a finer control over the carrier concentration. High purity, oxide-free samples are produced by ball milling of the elements and consolidation by spark plasma sintering. Calcium substitution upon the lanthanum site was confirmed by a combination of Rietveld refinements of powder X-ray diffraction data and wave dispersive spectroscopy. A zT_(max) 1.2 is reached at 1273 K for the composition La_(2.2)Ca_(0.78)Te_4 and the relative increase compared to La_(3−x)Te_4 is attributed to the finer carrier concentration