Anomalous Dynamic Arrest in a Mixture of Big and Small Particles

We present molecular dynamics simulations on the slow dynamics of a mixture of big and small soft-spheres with a large size disparity. Dynamics are investigated in a broad range of temperature and mixture composition. As a consequence of large size disparity, big and small particles exhibit very different relaxation times. As previously reported for simple models of short-ranged attractive colloids and polymer blends, several anomalous dynamic features are observed: i) sublinear behavior for mean squared displacements, ii) concave-to-convex crossover for density-density correlators, by varying temperature or wavevector, iii) logarithmic decay for specific wavevectors of density-density correlators. These anomalous features are observed over time intervals extending up to four decades, and strongly resemble predictions of the Mode Coupling Theory (MCT) for state points close to higher-order MCT transitions, which originate from the competition between different mechanisms for dynamic arrest. For the big particles we suggest competition between soft-sphere repulsion and depletion effects induced by neighboring small particles. For the small particles we suggest competition between bulk-like dynamics and confinement, respectively induced by neighboring small particles and by the slow matrix of big particles. By increasing the size disparity, a new relaxation scenario arises for the small particles. Self-correlators decay to zero at temperatures where density-density correlations are frozen. The behavior of the latters resembles features characteristic of type-A MCT transitions, defined by a zero value of the critical non-ergodicity parameter.Comment: Version 2. Added major new result

Mode-coupling theory for structural and conformational dynamics of polymer melts

A mode-coupling theory for dense polymeric systems is developed which unifyingly incorporates the segmental cage effect relevant for structural slowing down and polymer chain conformational degrees of freedom. An ideal glass transition of polymer melts is predicted which becomes molecular-weight independent for large molecules. The theory provides a microscopic justification for the use of the Rouse theory in polymer melts, and the results for Rouse-mode correlators and mean-squared displacements are in good agreement with computer simulation results.Comment: 4 pages, 3 figures, Phys. Rev. Lett. in pres

Design and evaluation of in-line product repair strategies for defect reduction in the production of electric drives

Manufacturing companies are continuously facing the challenge of operating their manufacturing processes and systems in order to deliver the required production rates of high quality products of increasing complexity, with limited use and waste of resources. This aspect is particularly critical in emerging sectors, such as the e-mobility industry, where state of the art quality and process control technologies show strong limitations. This paper proposes new solutions for implementing in-line product repair strategies in the production of electric drives for the automotive industry. Moreover, it develops an innovative quantitative tool to estimate the impact of the proposed strategies on the overall process-chain performance. The benefits of the approach are validated within a real industrial context

Subnanosecond spectral diffusion of a single quantum dot in a nanowire

We have studied spectral diffusion of the photoluminescence of a single CdSe quantum dot inserted in a ZnSe nanowire. We have measured the characteristic diffusion time as a function of pumping power and temperature using a recently developed technique [G. Sallen et al, Nature Photon. \textbf{4}, 696 (2010)] that offers subnanosecond resolution. These data are consistent with a model where only a \emph{single} carrier wanders around in traps located in the vicinity of the quantum dot

Single-photon excitation of a coherent state: catching the elementary step of stimulated light emission

When a single quantum of electromagnetic field excitation is added to the same spatio-temporal mode of a coherent state, a new field state is generated that exhibits intermediate properties between those of the two parents. Such a single-photon-added coherent state is obtained by the action of the photon creation operator on a coherent state and can thus be regarded as the result of the most elementary excitation process of a classical light field. Here we present and describe in depth the experimental realization of such states and their complete analysis by means of a novel ultrafast, time-domain, quantum homodyne tomography technique clearly revealing their non-classical character.Comment: 9 pages, 9 figures. Accepted for publication in Phys. Rev.

Tunable control of the bandwidth and frequency correlations of entangled photons

We demonstrate experimentally a new technique to control the bandwidth and the type of frequency correlations (correlation, anticorrelation, and even uncorrelation) of entangled photons generated by spontaneous parametric downconversion. The method is based on the control of the group velocities of the interacting waves. This technique can be applied in any nonlinear medium and frequency band of interest. It is also demonstrated that this technique helps enhance the quality of polarization entanglement even when femtosecond pulses are used as a pump.Comment: 4 pages, 4 figures, submitted to Phys. Rev. Let

Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time challenge, since different material properties lead to high defect densities in the epitaxial layers. In recent years, nanostructures however have shown to be suitable for successfully realising light emitters on silicon, taking advantage of their geometry. Facet edges and sidewalls can minimise or eliminate the formation of dislocations, and due to the reduced contact area, nanostructures are little affected by dislocation networks. Here we demonstrate the potential of indium phosphide quantum dots as efficient light emitters on CMOS-compatible silicon substrates, with luminescence characteristics comparable to mature devices realised on III-V substrates. For the first time, electrically driven single-photon emission on silicon is presented, meeting the wavelength range of silicon avalanche photo diodes' highest detection efficiency