Polarization Control of the Non-linear Emission on Semiconductor Microcavities

The degree of circular polarization ($\wp$) of the non-linear emission in semiconductor microcavities is controlled by changing the exciton-cavity detuning. The polariton relaxation towards \textbf{K} $\sim 0$ cavity-like states is governed by final-state stimulated scattering. The helicity of the emission is selected due to the lifting of the degeneracy of the $\pm 1$ spin levels at \textbf{K} $\sim 0$. At short times after a pulsed excitation $\wp$ reaches very large values, either positive or negative, as a result of stimulated scattering to the spin level of lowest energy ($+1/-1$ spin for positive/negative detuning).Comment: 8 pages, 3 eps figures, RevTeX, Physical Review Letters (accepted

Variation in the level of aggression, chemical and genetic distance among three supercolonies of the Argentine ant in Europe.

In their invasive ranges, Argentine ant populations often form one geographically vast supercolony, genetically and chemically uniform within which there is no intraspecific aggression. Here we present regional patterns of intraspecific aggression, cuticular hydrocarbons (CHCs) and population genetics of 18 nesting sites across Corsica and the French mainland. Aggression tests confirm the presence of a third European supercolony, the Corsican supercolony, which exhibits moderate to high levels of aggression, depending on nesting sites, with the Main supercolony, and invariably high levels of aggression with the Catalonian supercolony. The chemical analyses corroborated the behavioural data, with workers of the Corsican supercolony showing moderate differences in CHCs compared to workers of the European Main supercolony and strong differences compared to workers of the Catalonian supercolony. Interestingly, there were also clear genetic differences between workers of the Catalonian supercolony and the two other supercolonies at both nuclear and mitochondrial markers, but only very weak genetic differentiation between nesting sites of the Corsican and Main supercolonies (F(ST) = 0.06). A detailed comparison of the genetic composition of supercolonies also revealed that, if one of the last two supercolonies derived from the other, it is the Main supercolony that derived from the Corsican supercolony rather than the reverse. Overall, these findings highlight the importance of conducting more qualitative and quantitative analyses of the level of aggression between supercolonies, which has to be correlated with genetic and chemical data

Time-resolved cathodoluminescence of InGaAs/AlGaAs tetrahedral pyramidal quantum structures

An original time resolved cathodoluminescence set up has been used to investigate the optical properties and the carrier transport in quantum structures located in InGaAs/AlGaAs tetrahedral pyramids. An InGaAs quantum dot formed just below the top of the pyramid is connected to four types of low-dimensional barriers: InGaAs quantum wires on the edges of the pyramid, InGaAs quantum wells on the (111)A facets and segregated AlGaAs vertical quantum wire and AlGaAs vertical quantum wells formed at the centre and at the pyramid edges. Experiments were performed at a temperature of 92K, an accelerating voltage of 10kV and a beam probe current of 10pA. The cathodoluminescence spectrum shows five luminescence peaks. Rise and decay times for the different emission wavelengths provide a clear confirmation of the peak attribution (previously done with other techniques) to the different nanostructures grown in a pyramid. Moreover, experimental results suggest a scenario where carriers diffuse from the lateral quantum structures towards the central structures (the InGaAs quantum dot and the segregated AlGaAs vertical quantum wire) via the InGaAs quantum wires on the edges of the pyramid. According to this hypothesis, we have modeled the carrier diffusion along these quantum wires. An ambipolar carrier mobility of 1400cm2/V s allows to obtain a good fit to all temporal dependence

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band $\Lambda_3$ and the conduction band $\Lambda_1$ (the E1 and E1 + $\Delta_1$ transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of 10 \r{A}. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E1 and E1 + $\Delta_1$ excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm^-1 with a decrease in the thickness of the Ge layer from 10 to 6 \r{A} due to the spatial-confinement effect. The optimum thickness of the Ge layer, for which the size dispersion of quantum dots is minimum, is determined.Comment: 14 pages, 9 figure

Magnetic field effect on polarization and dispersion of exciton-polaritons in planar microcavities

The non-local dielectric response theory is extended to describe oblique reflection of light from quantum wells subjected to the magnetic field. This allows us to calculate the dispersion and polarization of the exciton-polariton modes in semiconductor microcavities in the presence of a magnetic field normal to the plane of the structure. We show that due to the interplay between the exciton Zeeman splitting and TE-TM splitting of the photon modes, four polariton dispersion branches are formed with a polarization gradually changing from circular in the exciton-like part to linear in the photon-like part of each branch. Faraday rotation in quantum microcavities is shown to be strongly enhanced as compared with the rotation in quantum wells.Comment: 19 pages, 5 figure

Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells

The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.Comment: 5 pages, 2 figure

Nonlinear effects in spin relaxation of cavity polaritons

We present the general kinetic formalism for the description of spin and energy relaxation of the cavity polaritons in the framework of the Born-Markov approximation. All essential mechanisms of polaritons redistribution in reciprocal space together with final state bosonic stimulation are taken into account, from our point of view. The developed theory is applied to describe our experimental results on the polarization dynamics obtained in the polariton parametric amplifier geometry (pumping at so-called magic angle). We have experimentally confirmed that the anisotropy of the polariton-polariton interaction is responsible for the build up of the cross-linear polarisation of the signal. The long-living linear polarization is observed at zero detuning. Under elliptical pumping, we have directly measured in the time domain and modelled the effect of self-induced Larmor precession.Comment: 21 pages, 4 figures, accepted to Semiconductor

Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector

We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is achieved at zero magnetic field. Moreover the electroluminescence circular polarization is still about 8% at room temperature.Comment: *Corresponding author: [email protected]