Review of the Supply of and Demand for Further Education in Scotland

These documents provide are an Executive Summary and Full Report of the background to, methodology for, and overall conclusions and recommendations of a review of the supply of and demand for Further Education (FE) provision in Scottish Further Education colleges in 2000. The review was commissioned by the Scottish Further Education Funding Council (SFEFC), and carried out between November 1999 and June 2000 by a team of researchers drawn from the Scottish Further Education Unit (SFEU), the Centre for Research in Lifelong Learning, Glasgow Caledonian University/University of Stirling, and the Applied Statistics Group, Napier University

Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks

GeSn alloys with Sn contents of 8.4 % and 10.7 % are grown pseudomorphically on Ge buffers on Si (001) substrates. The alloys as-grown are compressively strained, and therefore indirect bandgap. Undercut GeSn on Ge microdisk structures are fabricated and strained by silicon nitride stressor layers, which leads to tensile strain in the alloys, and direct bandgap photoluminescence in the 3–5 µm gas sensing window of the electromagnetic spectrum. The use of pseudomorphic layers and external stress mitigates the need for plastic deformation to obtain direct bandgap alloys. It is demonstrated, that the optically pumped light emission overlaps with the methane absorption lines, suggesting that GeSn alloys are well suited for mid-infrared integrated gas sensors on Si chips

Low loss Ge-on-Si waveguides operating in the 8–14 µm atmospheric transmission window

Germanium-on-silicon waveguides were modeled, fabricated and characterized at wavelengths ranging from 7.5 to 11 µm. Measured waveguide losses are below 5 dB/cm for both TE and TM polarization and reach values of ∼ 1 dB/cm for ≥ 10 µm wavelengths for the TE polarization. This work demonstrates experimentally for the first time that Ge-on-Si is a viable waveguide platform for sensing in the molecular fingerprint spectral region. Detailed modeling and analysis is presented to identify the various loss contributions, showing that with practical techniques losses below 1 dB/cm could be achieved across the full measurement range

How do pharmaceutical companies model survival of cancer patients? A review of NICE Single Technology Appraisals in 2017

Objectives Before an intervention is publicly funded within the United Kingdom, the cost-effectiveness is assessed by the National Institute of Health and Care Excellence (NICE). The efficacy of an intervention across the patients’ lifetime is often influential of the cost-effectiveness analyses, but is associated with large uncertainties. We reviewed committee documents containing company submissions and evidence review group (ERG) reports to establish the methods used when extrapolating survival data, whether these adhered to NICE Technical Support Document (TSD) 14, and how uncertainty was addressed. Methods A systematic search was completed on the NHS Evidence Search webpage limited to single technology appraisals of cancer interventions published in 2017, with information obtained from the NICE Web site. Results Twenty-eight appraisals were identified, covering twenty-two interventions across eighteen diseases. Every economic model used parametric curves to model survival. All submissions used goodness-of-fit statistics and plausibility of extrapolations when selecting a parametric curve. Twenty-five submissions considered alternate parametric curves in scenario analyses. Six submissions reported including the parameters of the survival curves in the probabilistic sensitivity analysis. ERGs agreed with the company's choice of parametric curve in nine appraisals, and agreed with all major survival-related assumptions in two appraisals. Conclusions TSD 14 on survival extrapolation was followed in all appraisals. Despite this, the choice of parametric curve remains subjective. Recent developments in Bayesian approaches to extrapolation are not implemented. More precise guidance on the selection of curves and modelling of uncertainty may reduce subjectivity, accelerating the appraisal process

Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

Mid-infrared intersubband absorption from p-Ge quantum wells with Si0.5Ge0.5 barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm

Mid-Infrared Intersubband Absorption from P-Ge Quantum Wells on Si

Mid-infrared intersubband absorption from p-Ge quantum wells with Si0.5Ge0.5 barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red spectroscopy measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm

Ohmic contacts to n-type germanium with low specific contact resistivity

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) x10<sup>-7</sup> Ω-cm<sup>2</sup> for anneal temperatures of 340 degC. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.<p></p&gt

Assessing with e-Ase

The Educational Development Unit have produced a guide to assist academic staff in transforming assessment practices underpinned by technology. 'Assessing with e-Ase' highlights how technology combined with sound pedagogy has the potential to enhance the student experience of learning, teaching and assessment. Drawing on the experiences, knowledge and understanding of the e-assessment project at Middlesex University, it offers a consideration of contextual, procedural and logistical factors that may impact when using e-assessment practices. Key issues for consideration when developing and implementing e-assessment are included along with the part played by policy and strategy. Examples of departmental case studies, an outline of the support available to staff and links to resources that may provide useful additional information are also included