Semimetalic graphene in a modulated electric potential

The $\pi$-electronic structure of graphene in the presence of a modulated electric potential is investigated by the tight-binding model. The low-energy electronic properties are strongly affected by the period and field strength. Such a field could modify the energy dispersions, destroy state degeneracy, and induce band-edge states. It should be noted that a modulated electric potential could make semiconducting graphene semimetallic, and that the onset period of such a transition relies on the field strength. There exist infinite Fermi-momentum states in sharply contrast with two crossing points (Dirac points) for graphene without external fields. The finite density of states (DOS) at the Fermi level means that there are free carriers, and, at the same time, the low DOS spectrum exhibits many prominent peaks, mainly owing to the band-edge states.Comment: 12pages, 5 figure

Parity effect in Al and Nb single electron transistors in a tunable environment

Two different types of Cooper pair transistors, with Al and Nb islands, have been investigated in a tunable electromagnetic environment. The device with an Al island demonstrates gate charge modulation with 2e-periodicity in a wide range of environmental impedances at bath temperatures below 340 mK. Contrary to the results of the Al sample, we were not able to detect 2e-periodicity under any conditions on similar samples with Nb island. We attribute this to the material properties of Nb.Comment: 3 pages, 3 figure

Nodulação e fixação simbiótica de nitrogênio em feijoeiro com estirpes nativas de rizóbio, em solo tratado com lodo de esgoto.

Notas científicas

Efeito do lodo de esgoto no crescimento e fixação simbiótica do N2 em feijoeiro (Phaseolus vulgaris L.).

Avaliou-se o efeito do lodo de esgoto, como fonte de N, no crescimento do feijoeiro e na eficiência da simbiose com estirpes nativas e selecionadas de rizóbio. O experimento foi conduzido em casa de vegetação, em um Latossolo Vermelho distroférrico, com os seguintes tratamentos: ausência de adubos químicos e de lodo, adubação química completa, doses 1, 2 e 3 de lodo de esgoto, feijão inoculado com estirpes eficientes de rizóbio + adubação nitrogenada no plantio, feijão inoculado + dose 1 de lodo , feijão inoculado + dose 2 de lodo e feijão inoculado + dose 3 de lodo. A dose 1 (14,8 t ha-1, na base seca) forneceu a metade do N mineral recomendado para a cultura do feijão , a dose 2 (29,6 t ha-1, na base seca) e a 3 (59,2 t ha-1, na base seca) forneceram, respectivamente, a quantidade de N mineral recomendada e duas vezes essa quantidade. Os maiores valores da atividade de redução do acetileno nos tratamentos com as doses 1 e 2 de lodo, em plantas que não foram inoculadas, demonstraram que a aplicação do lodo de esgoto pode aumentar a eficiência dos rizóbios nativos, quando comparados às bactérias oriundas do inoculante. Também demonstrou-se que a aplicação de fertilizante nitrogenado no feijoeiro pode ser substituída por quantidade adequada de lodo de esgoto.bitstream/CNPMA/5791/1/boletim_19.pd

Fixação simbiótica de nitrogênio em soja cultivada em perlita e suplementada com silicato de sódio.

bitstream/item/66222/1/32018.pdfFERTBI

Crescimento e produção do trigo e da aveia branca suplementados com silício.

Os estudos biológicos na área agronômica já demonstraram os efeitos notáveis do silício no aumento do crescimento vegetal, na produção de alimentos e no combate a estresses causados em plantas por fatores físicos, climáticos e biológicos. O objetivo da pesquisa foi avaliar o efeito do silício no crescimento e produção de três cultivares de trigo (BR 18, BR 40 e IPR 85) e duas de aveia branca (URS 21 e UFRGS 17) em condições hidropônicasbitstream/item/38734/1/BP200741.pdfDocumento on-line

Four Measures of the Intracluster Medium Temperature and Their Relation to a Cluster's Dynamical State

We employ an ensemble of hydrodynamic cluster simulations to create spatially and spectrally resolved images of quality comparable to Chandra's expected performance. Emission from simulation mass elements is represented using the XSPEC mekal program assuming 0.3 solar metallicity, and the resulting spectra are fit with a single-temperature model. Despite significant departures from isothermality in the cluster gas, single-temperature models produce acceptable fits to 20,000 source photon spectra. The spectral fit temperature T_s is generally lower than the mass weighted average temperature T_m due to the influence of soft line emission from cooler gas being accreted as part of the hierarchical clustering process. In a Chandra-like bandpass of 0.5 to 9.5 keV we find a nearly uniform fractional bias of (T_m-T_s)/T_s = 20% with occasional large deviations in smaller clusters. In the more traditional 2.0 to 9.5 keV bandpass, the fractional deviation is scale-dependent and on average follows the relation (T_m-T_s)/T_s = 0.2 log(T_m). This bias results in a spectral mass-temperature relationship with slope about 1.6, intermediate between the virial relation M ~ T_m^{3/2} and the observed relation M_{ICM} ~ T^2. Imaging each cluster in the ensemble at 16 epochs in its evolutionary history, we catalogue merger events with mass ratios exceeding 10% in order to investigate the relationship between spectral temperature and proximity to a major merger event. Clusters that are very cool relative to the mean mass-temperature relationship lie preferentially close to a merger, suggesting a viable observational method to cull a subset of dynamically young clusters from the general population.Comment: 34 pages, including 2 tables and 14 figures (one in color). Compiled using LaTeX 2.09 with graphics package and aaspp4 style. The simulated spectral data files used in this paper are available for public consumption at http://redshift.stanford.edu/bfm

Enhancement of Si-O hybridization in low-temperature grown ultraviolet photo-oxided SiO2 film observed by x-ray absorption and photoemission spectroscopy

100學年度杜昭宏升等參考著作[[abstract]]The dielectric properties associated with the electronic and bonding structures of SiO2 films were examined using the Si L3,2- and O K-edge x-ray absorption near-edge structures (XANES) and valence-band photoemission spectroscopy (VB-PES) techniques. The Si L3,2- and O K-edge XANES measurements for the low-temperature grown UV-photon oxidized SiO2 (UV-SiO2) and the conventional high-temperature thermal-oxidized SiO2 (TH-SiO2) suggest enhancement of O 2p–Si 3p hybridization in UV-SiO2. VB-PES measurements reveal enhancement of nonbonding O 2p and O 2p–Si 3p hybridized states. The enhanced O 2p and Si 3p hybridization implies a shortening of the average Si–O bond length, which explains an increase of the density and the improvement of the dielectric property of UV-SiO2.[[notice]]補正完畢[[incitationindex]]SCI[[booktype]]紙

Weak dipole moment of τ\tau in e+e−e^+e^- collisions with longitudinally polarized electrons

It is pointed out that certain CP-odd momentum correlations in the production and subsequent decay of tau pairs in $e^+e^-$ collisions get enhanced when the $e^-$ is longitudinally polarized. Analytic expressions for these correlations are obtained for the single-pion decay mode of $\tau$ when $\tau^+\tau^-$ have a ``weak" dipole form factor (WDFF) coupling to $Z$ . For $e^+e^-$ collisions at the $Z$ peak, a sensitivity of about 1-5$\times 10^{-17}$\mbox{$e$ cm} for the $\tau$ WDFF can be reached using a {\em single} $\tau^+\tau^-$ decay channel, with $10^6\, Z$'s likely to be available at the SLC at Stanford with $e^-$ polarization of 62\%-75\%.Comment: 9 pages, Latex, PRL-TH-93/17 (Revised