L'Orgue de l'Abbaye d'Anchin et son transfert à Douai

Vanmackelberg M. L'Orgue de l'Abbaye d'Anchin et son transfert à Douai . In: Revue du Nord, tome 48, n°190, Juillet-septembre 1966. pp. 289-308

Pierre Dandrieu : Livre de Noëls variés pour orgue. Préface de Norbert Dufourcq, 1979

Vanmackelberg M. Pierre Dandrieu : Livre de Noëls variés pour orgue. Préface de Norbert Dufourcq, 1979. In: Dix-huitième Siècle, n°12, 1980. Représentations de la vie sexuelle. pp. 579-580

Pierre Dandrieu : Livre de Noëls variés pour orgue. Préface de Norbert Dufourcq, 1979

Vanmackelberg M. Pierre Dandrieu : Livre de Noëls variés pour orgue. Préface de Norbert Dufourcq, 1979. In: Dix-huitième Siècle, n°12, 1980. Représentations de la vie sexuelle. pp. 579-580

70 GHZ FMAX fully-depleted SOI MOSFET’S for low-power wireless applications

For the first time, excellent microwave performances including high frequency noise are ported for 0.25 micron gate channel length Fully Depleted (FD) Silicon-on-Insulator (SOI) MOSFET’s: a maximum extrapolated oscillation frequency (fmax) of 70 GHz and the state-of-the-art minimum noise figure (NFmin) of 0.8 dB with high available associated gain (Gass) of 13 dB at 6 GHz, at Vds = 0.75 V, Pdc < 3 mW, have been measured. We demonstrate that the kink related low frequency noise overshoot induced by the floating body effects disappears if the active silicon film thickness is thinned down to 30 nm. Ring oscillators measurements show also that SOI inverters are 30% faster than bulk ones. Finally, the operation at 1.8 V of a sigma delta modulator as well as of critical RF circuits (quadrature generator and mixers) for a zero IF 2 GHz GSM receiver has been demonstrated with this technology

Impact of downscaling on high-frequency noise performance of bulk and SOI MOSFETs

Parameters limiting the improvement of high-frequency noise characteristics for deep-submicrometer MOSFETs with the downscaling process, of the channel gate length are analyzed experimentally and analytically. It is demonstrated that the intrinsic Pucel's noise P, R, and C parameters are not strongly modified by the device scaling. The limitation of the noise performance versus the downscaling process is mainly related to the frequency performance (f(max)) of the device. It is demonstrated that for MOSFETs with optimized source, drain, and gate accesses, the degradation of the maximum oscillation frequency is mainly related to the increase of the parasitic feedback gate-to-drain capacitance and output conductance with the physical channel length reduction. Optimization of these internal parameters is needed to further improve the high-frequency noise performance of ultra deep-submicrometer MOSFETs