1,371 research outputs found
Lasing in circuit quantum electrodynamics with strong noise
We study a model which can describe a superconducting single electron
transistor (SSET) or a double quantum dot coupled to transmission-line
oscillator. In both cases the degree of freedom is given by a charged particle,
which couples strongly to the electromagnetic environment or phonons. We
consider the case where a lasing condition is established and study the
dependence of the average photon number in the resonator on the spectral
function of the electromagnetic environment. We focus on three important cases:
a strongly coupled environment with a small cut-off frequency, a structured
environment peaked at a specific frequency and 1/f-noise. We find that the
electromagnetic environment can have a substantial impact on the photon
creation. Resonance peaks are in general broadened and additional resonances
can appear
Full counting statistics of information content
We review connections between the cumulant generating function of full
counting statistics of particle number and the R\'enyi entanglement entropy. We
calculate these quantities based on the fermionic and bosonic path-integral
defined on multiple Keldysh contours. We relate the R\'enyi entropy with the
information generating function, from which the probability distribution
function of self-information is obtained in the nonequilibrium steady state. By
exploiting the distribution, we analyze the information content carried by a
single bosonic particle through a narrow-band quantum communication channel.
The ratio of the self-information content to the number of bosons fluctuates.
For a small boson occupation number, the average and the fluctuation of the
ratio are enhanced.Comment: 16 pages, 5 figure
Irreversibility on the Level of Single-Electron Tunneling
We present a low-temperature experimental test of the fluctuation theorem for
electron transport through a double quantum dot. The rare entropy-consuming
system trajectories are detected in the form of single charges flowing against
the source-drain bias by using time-resolved charge detection with a quantum
point contact. We find that these trajectories appear with a frequency that
agrees with the theoretical predictions even under strong nonequilibrium
conditions, when the finite bandwidth of the charge detection is taken into
account
Bulk electronic structure of non-centrosymmetric EuTGe3 (T= Co, Ni, Rh, Ir) studied by hard x-ray photoelectron spectroscopy
Non-centrosymmetric EuTGe3 (T=Co, Ni, Rh, and Ir) possesses magnetic Eu2+
ions and antiferromagnetic ordering appears at low temperatures. Transition
metal substitution leads to changes of the unit cell volume and of the magnetic
ordering. However, the magnetic ordering temperature does not scale with the
volume change and the Eu valence is expected to remain divalent. Here we study
the bulk electronic structure of non-centrosymmetric EuTGe3 (T=Co, Ni, Rh, and
Ir) by hard x-ray photoelectron spectroscopy. The Eu 3d core level spectrum
confirms the robust Eu2+ valence state against the transition metal
substitution with a small contribution from Eu3+. The estimated Eu mean-valence
is around 2.1 in these compounds as confirmed by multiplet calculations. In
contrast, the Ge 2p spectrum shifts to higher binding energy upon changing the
transition metal from 3d to 4d to 5d elements, hinting of a change in the Ge-T
bonding strength. The valence bands of the different compounds are found to be
well reproduced by ab initio band structure calculations
Statistics of voltage fluctuations in resistively shunted Josephson junctions
The intrinsic nonlinearity of Josephson junctions converts Gaussian current
noise in the input into non-Gaussian voltage noise in the output. For a
resistively shunted Josephson junction with white input noise we determine
numerically exactly the properties of the few lowest cumulants of the voltage
fluctuations, and we derive analytical expressions for these cumulants in
several important limits. The statistics of the voltage fluctuations is found
to be Gaussian at bias currents well above the Josephson critical current, but
Poissonian at currents below the critical value. In the transition region close
to the critical current the higher-order cumulants oscillate and the voltage
noise is strongly non-Gaussian. For coloured input noise we determine the third
cumulant of the voltage.Comment: 9 pages, 5 figure
- …