Silicon-etalon fiber-optic temperature sensor

A temperature sensor is described which consists of a silicon etalon that is sputtered directly onto the end of an optical fiber. A two-layer protective cap structure is used to improve the sensor's long-term stability. The sensor's output is wavelength encoded to provide a high degree of immunity from cable and connector effects. This sensor is extremely compact and potentially inexpensive

Modeling of a Cantilever-Based Near-Field Scanning Microwave Microscope

We present a detailed modeling and characterization of our scalable microwave nanoprobe, which is a micro-fabricated cantilever-based scanning microwave probe with separated excitation and sensing electrodes. Using finite-element analysis, the tip-sample interaction is modeled as small impedance changes between the tip electrode and the ground at our working frequencies near 1GHz. The equivalent lumped elements of the cantilever can be determined by transmission line simulation of the matching network, which routes the cantilever signals to 50 Ohm feed lines. In the microwave electronics, the background common-mode signal is cancelled before the amplifier stage so that high sensitivity (below 1 atto-Farad capacitance changes) is obtained. Experimental characterization of the microwave probes was performed on ion-implanted Si wafers and patterned semiconductor samples. Pure electrical or topographical signals can be realized using different reflection modes of the probe.Comment: 7 figure

Human-Machine Interface for Tele-Robotic Operation: Mapping of Tongue Movements Based on Aural Flow Monitoring

2004 IEEE International Conference on Intelligent Robots and Systems (IROS), October, 2004 (Awarded “Best Paper in Conference”

Electrical Characterization of Defects in SiC Schottky Barriers

We have been investigating the effect of screw dislocation and other structural defects on the electrical properties of SiC. SiC is a wide-bandgap semiconductor that is currently received much attention due to its favorable high temperature behavior and high electric field breakdown strength. Unfortunately, the current state-of-the-art crystal growth and device processing methods produce material with high defect densities, resulting in a limited commercial viabilit

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy

Driven by interactions due to the charge, spin, orbital, and lattice degrees of freedom, nanoscale inhomogeneity has emerged as a new theme for materials with novel properties near multiphase boundaries. As vividly demonstrated in complex metal oxides and chalcogenides, these microscopic phases are of great scientific and technological importance for research in high-temperature superconductors, colossal magnetoresistance effect, phase-change memories, and domain switching operations. Direct imaging on dielectric properties of these local phases, however, presents a big challenge for existing scanning probe techniques. Here, we report the observation of electronic inhomogeneity in indium selenide (In2Se3) nanoribbons by near-field scanning microwave impedance microscopy. Multiple phases with local resistivity spanning six orders of magnitude are identified as the coexistence of superlattice, simple hexagonal lattice and amorphous structures with 100nm inhomogeneous length scale, consistent with high-resolution transmission electron microscope studies. The atomic-force-microscope-compatible microwave probe is able to perform quantitative sub-surface electronic study in a noninvasive manner. Finally, the phase change memory function in In2Se3 nanoribbon devices can be locally recorded with big signal of opposite signs.Comment: 11 pages, 4 figure