Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field

We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and with the field-induced transition into a decoupled bilayer. In addition, the increasing field transfers electrons from the triangular to rectangular well and, at high enough field value, the triangular well is emptied. Consequently, the electronic system becomes a single layer which leads to a sharp step in the density of electron states and to an additional minimum in the magnetoresistance curve.Comment: 3 pages, 3 figure

In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells

We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barrier. With a proper choice of the barrier parameters one can control the occupancy of the two wells and of the two lowest (bonding and antibonding) subbands. The electron properties can be further influenced by applying front- or back-gate voltage.Comment: 4 pages, 5 figures, elsart/PHYEAUTH macros; to be presented on the EP2DS-15 Conference in Nara, Japan. Revised version. To appear in Physica

Temperature-Dependence of the Resistivity of a Dilute 2D Electron System in High Parallel Magnetic Field

We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic behavior observed in the absence of a magnetic field. In a field of 10.8 T, insulating behavior is found for densities up to n_s approximately 1.35 x 10^{11} cm^{-2} or 1.5 n_c; above this density the resistance is a very weak function of temperature, varying less than 10% between 0.25 K and 1.90 K. At low densities the resistance goes to infinity more rapidly as the temperature is reduced than in zero field and the magnetoresistance diverges as T goes to 0.Comment: 4 pages, including 4 figures. References adde

Identification of harmful cyanobacteria in the Sacramento-San Joaquin Delta and Clear Lake, California by DNA barcoding.

Accurate identification of cyanobacteria using traditional morphological taxonomy is challenging due to the magnitude of phenotypic plasticity among natural algal assemblages. In this study, molecular approach was utilized to facilitate the accurate identification of cyanobacteria in the Sacramento-San Joaquin Delta and in Clear Lake in Northern California where recurring blooms have been observed over the past decades. Algal samples were collected from both water bodies in 2011 and the samples containing diverse cyanobacteria as identified by morphological taxonomy were chosen for the molecular analysis. The 16S ribosomal RNA genes (16S rDNA) and the adjacent internal transcribed spacer (ITS) regions were amplified by PCR from the mixed algal samples using cyanobacteria generic primers. The obtained sequences were analyzed by similarity search (BLASTN) and phylogenetic analysis (16S rDNA) to differentiate species sharing significantly similar sequences. A total of 185 plasmid clones were obtained of which 77 were successfully identified to the species level: Aphanizomenon flos-aquae, Dolichospermum lemmermannii (taxonomic synonym: Anabaena lemmermannii), Limnoraphis robusta (taxonomic synonym: Lyngbya hieronymusii f. robusta) and Microcystis aeruginosa. To date, Dolichospermum and Limnoraphis found in Clear Lake have only been identified to the genus lavel by microscopy. During the course of this study, morphological identification and DNA barcoding confirmed A. flos-aquae as the predominant cyanobacterium in the Sacramento-San Joaquin Delta indicating a shift from M. aeruginosa that have dominated the blooms in the past decade. Lastly, the species-specific identification of Limnoraphis robusta in Clear Lake is another significant finding as this cyanobacterium has, thus far, only been reported in Lake Atitlan blooms in Guatemala

Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity

Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is accompanied in strong magnetic fields by a substantial change in the character of the temperature dependence of the conductivity. This implies that spins play an important role in 2D VRH conductivity because the processes of orbital origin are not relevant to the observed effect. A possible explanation involves hopping via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.Comment: 10 pages, 4 jpeg figure

Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well defined transition. The value of resistivity at the transition is found to depend strongly on density

Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field

Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field. The characteristics of the system derived experimentally are in quantitative agreement with numerical self-consistent-field calculations of the electronic structure.Comment: 6 pages, 5 figure

Tenfold Magnetoconductance in a Non-Magnetic Metal Film

We present magnetoconductance (MC) measurements of homogeneously disordered Be films whose zero field sheet conductance (G) is described by the Efros-Shklovskii hopping law $G(T)=(2e^2/h)\exp{-(T_o/T)^{1/2}}$. The low field MC of the films is negative with G decreasing 200% below 1 T. In contrast the MC above 1 T is strongly positive. At 8 T, G increases 1000% in perpendicular field and 500% in parallel field. In the simpler parallel case, we observe {\em field enhanced} variable range hopping characterized by an attenuation of $T_o$ via the Zeeman interaction.Comment: 9 pages including 5 figure

Two-species percolation and Scaling theory of the metal-insulator transition in two dimensions

Recently, a simple non-interacting-electron model, combining local quantum tunneling via quantum point contacts and global classical percolation, has been introduced in order to describe the observed ``metal-insulator transition'' in two dimensions [1]. Here, based upon that model, a two-species-percolation scaling theory is introduced and compared to the experimental data. The two species in this model are, on one hand, the ``metallic'' point contacts, whose critical energy lies below the Fermi energy, and on the other hand, the insulating quantum point contacts. It is shown that many features of the experiments, such as the exponential dependence of the resistance on temperature on the metallic side, the linear dependence of the exponent on density, the $e^2/h$ scale of the critical resistance, the quenching of the metallic phase by a parallel magnetic field and the non-monotonic dependence of the critical density on a perpendicular magnetic field, can be naturally explained by the model. Moreover, details such as the nonmonotonic dependence of the resistance on temperature or the inflection point of the resistance vs. parallel magnetic are also a natural consequence of the theory. The calculated parallel field dependence of the critical density agrees excellently with experiments, and is used to deduce an experimental value of the confining energy in the vertical direction. It is also shown that the resistance on the ``metallic'' side can decrease with decreasing temperature by an arbitrary factor in the degenerate regime ($T\lesssim E_F$).Comment: 8 pages, 8 figure