Fabrication of high quality ferromagnetic Josephson junctions

We present ferromagnetic Nb/Al2O3/Ni60Cu40/Nb Josephson junctions (SIFS) with an ultrathin Al2O3 tunnel barrier. The junction fabrication was optimized regarding junction insulation and homogeneity of current transport. Using ion-beam-etching and anodic oxidation we defined and insulated the junction mesas. The additional 2 nm thin Cu layer below the ferromagnetic NiCu (SINFS) lowered interface roughness and ensured very homogeneous current transport. A high yield of junctional devices with jc spreads less than 2% was obtained.Comment: 5 pages, 6 figures; VORTEX IV conference contribution; Submitted to Physica

Observation of Josephson coupling through an interlayer of antiferromagnetically ordered chromium

The supercurrent transport in metallic Josephson tunnel junctions with an additional interlayer made up by chromium, being an itinerant antiferromagnet, was studied. Uniform Josephson coupling was observed as a function of the magnetic field. The supercurrent shows a weak dependence on the interlayer thickness for thin chromium layers and decays exponentially for thicker films. The diffusion constant and the coherence length in the antiferromagnet were estimated. The antiferromagnetic state of the barrier was indirectly verified using reference samples. Our results are compared to macroscopic and microscopic models.Comment: Phys. Rev. B (2009), in prin

Memory cell based on a φ\varphi Josephson junction

The $\varphi$ Josephson junction has a doubly degenerate ground state with the Josephson phases $\pm\varphi$. We demonstrate the use of such a $\varphi$ Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the "store" state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with Rapid Single Flux Quantum logic is possible.Comment: to be published in AP

0-pi Josephson tunnel junctions with ferromagnetic barrier

We fabricated high quality Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions. Using a ferromagnetic layer with a step-like thickness, we obtain a 0-pi junction, with equal lengths and critical currents of 0 and pi parts. The ground state of our 330 microns (1.3 lambda_J) long junction corresponds to a spontaneous vortex of supercurrent pinned at the 0-pi step and carrying ~6.7% of the magnetic flux quantum Phi_0. The dependence of the critical current on the applied magnetic field shows a clear minimum in the vicinity of zero field.Comment: submitted to PR

Spontaneous chirality via long-range electrostatic forces

We consider a model for periodic patterns of charges constrained over a cylindrical surface. In particular we focus on patterns of chiral helices, achiral rings or vertical lamellae, with the constraint of global electroneutrality. We study the dependence of the patterns' size and pitch angle on the radius of the cylinder and salt concentration. We obtain a phase diagram by using numerical and analytic techniques. For pure Coulomb interactions, we find a ring phase for small radii and a chiral helical phase for large radii. At a critical salt concentration, the characteristic domain size diverges, resulting in macroscopic phase segregation of the components and restoring chiral symmetry. We discuss possible consequences and generalizations of our model.Comment: Revtex, 4 pages, 4 figure

Critical current diffraction pattern of SIFS Josephson junctions with step-like F-layer

We present the latest generation of superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions with a step-like thickness of the ferromagnetic (F) layer. The F-layer thicknesses $d_1$ and $d_2$ in both halves were varied to obtain different combinations of positive and negative critical current densities $j_{c,1}$ and $j_{c,2}$. The measured dependences of the critical current on applied magnetic field can be well described by a model which takes into account different critical current densities (obtained from reference junctions) and different net magnetization of the multidomain ferromagnetic layer in both halves.Comment: 7 pages, 3 figure

Phase retrapping in aφJosephson junction: onset of the butterfly effect

We investigate experimentally the retrapping of the phase in a φ Josephson junction upon return of the junction to the zero-voltage state. Since the Josephson energy profile U 0 ( ψ ) in φ JJ is a 2 π periodic double-well potential with minima at ψ = ± φ mod 2 π , the question is at which of the two minima − φ or + φ the phase will be trapped upon return from a finite voltage state during quasistatic decrease of the bias current (tilt of the potential). By measuring the relative population of two peaks in escape histograms, we determine the probability of phase trapping in the ± φ wells for different temperatures. Our experimental results agree qualitatively with theoretical predictions. In particular, we observe an onset of the butterfly effect with an oscillating probability of trapping. Unexpectedly, this probability saturates at a value different from 50% at low temperatures

Low-T_c Josephson junctions with tailored barrier

Nb/Al_2O_3/Ni_{0.6}Cu_{0.4}/Nb based superconductor-insulator-ferromagnet-superconductor (SIFS) Josephson tunnel junctions with a thickness step in the metallic ferromagnetic \Ni_{0.6}\Cu_{0.4} interlayer were fabricated. The step was defined by optical lithography and controlled etching. The step height is on the scale of a few angstroms. Experimentally determined junction parameters by current-voltage characteristics and Fraunhofer pattern indicate an uniform F-layer thickness and the same interface transparencies for etched and non-etched F-layers. This technique could be used to tailor low-T_c Josephson junctions having controlled critical current densities at defined parts of the junction area, as needed for tunable resonators, magnetic-field driven electronics or phase modulated devices.Comment: 6 pages, 6 figures, small changes, to be published by JA

Visualizing supercurrents in ferromagnetic Josephson junctions with various arrangements of 0 and \pi segments

Josephson junctions with ferromagnetic barrier can have positive or negative critical current depending on the thickness $d_F$ of the ferromagnetic layer. Accordingly, the Josephson phase in the ground state is equal to 0 (a conventional or 0 junction) or to $\pi$ ($\pi$ junction). When 0 and $\pi$ segments are joined to form a "0-$\pi$ junction", spontaneous supercurrents around the 0-$\pi$ boundary can appear. Here we report on the visualization of supercurrents in superconductor-insulator-ferromagnet-superconductor (SIFS) junctions by low-temperature scanning electron microscopy (LTSEM). We discuss data for rectangular 0, $\pi$, 0-$\pi$, 0-$\pi$-0 and 20 \times 0-$\pi$ junctions, disk-shaped junctions where the 0-$\pi$ boundary forms a ring, and an annular junction with two 0-$\pi$ boundaries. Within each 0 or $\pi$ segment the critical current density is fairly homogeneous, as indicated both by measurements of the magnetic field dependence of the critical current and by LTSEM. The $\pi$ parts have critical current densities $j_c^\pi$ up to 35\units{A/cm^2} at T = 4.2\units{K}, which is a record value for SIFS junctions with a NiCu F-layer so far. We also demonstrate that SIFS technology is capable to produce Josephson devices with a unique topology of the 0-$\pi$ boundary.Comment: 29 pages, 8 figure