Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation

Porous GaSb has been formed by Ga ion implantation into crystalline GaSb substrates at either room temperature or −180 °C. The morphology has been characterized using scanning electron microscopy and the atomic structure was determined using extended x-ray absorption fine structure spectroscopy. Room-temperature implantation at low fluences leads to the formation of ∼20-nm voids though the material remains crystalline. Higher fluences cause the microstructure to evolve into a network of amorphous GaSb rods ∼15 nm in diameter. In contrast, implantation at −180 °C generates large, elongated voids but no rods. Upon exposure to air, the surface of the porous material is readily oxidized yielding Ga₂O₃ and metallic Sb precipitates, the latter resulting from the reduction of unstable Sb₂O₃. We consider and discuss the atomic-scale mechanisms potentially operative during the concurrent crystalline-to-amorphous and continuous-to-porous transformations

Structural and elastic characterization of Cu-implanted SiO₂ films on Si(100) substrates

Cu-implanted SiO₂ films on Si(100) have been studied and compared to unimplanted SiO₂ on Si(100) using x-ray methods, transmission electron microscopy, Rutherford backscattering, and Brillouin spectroscopy. The x-ray results indicate the preferred orientation of Cu {111} planes parallel to the Si substrate surface without any directional orientation for Cu-implanted SiO₂∕Si(100) and for Cu-implanted and annealedSiO₂∕Si(100). In the latter case, transmission electron microscopy reveals the presence of spherical nanocrystallites with an average size of ∼2.5 nm. Rutherford backscattering shows that these crystallites (and the Cu in the as-implanted film) are largely confined to depths of 0.4−1.2 μm below the film surface. Brillouin spectra contain peaks due to surface, film-guided and bulk acoustic modes. Surface (longitudinal) acoustic wave velocities for the implanted films were ∼7% lower (∼2% higher) than for unimplanted SiO₂∕Si(100). Elastic constants were estimated from the acoustic wave velocities and film densities. C₁₁ (C₄₄) for the implanted films was ∼10% higher (lower) than that for the unimplanted film. The differences in acoustic velocities and elastic moduli are ascribed to implantation-induced compaction and/or the presence of Cu in the SiO₂ film.B.J. and M.C.R. are grateful for financial support from the Australian Synchrotron Research Program, funded by the Commonwealth of Australia. M.C.R. would also like to thank the Australian Research Council for their financial support. The financial support of the Natural Sciences and Engineering Research Council of Canada NSERC is gratefully acknowledged by G.T.A. and J.S

Formation and structural characterization of Ni nanoparticles embedded in SiO₂

Face-centered cubic Ni nanoparticles were formed in SiO₂ by ion implantation and thermal annealing. Small-angle x-ray scattering in conjunction with transmission electron microscopy was used to determine the nanoparticle size as a function of annealing temperature, whereas the local atomic structure was measured with x-ray absorption spectroscopy. The influence of finite-size effects on the nanoparticle structural properties was readily apparent and included a decrease in coordination number and bond length and an increase in structural disorder for decreasing nanoparticle size. Such results are consistent with the non-negligible surface-to-volume ratio characteristic of nanoparticles. In addition, temperature-dependent x-ray absorption spectroscopy measurements showed the mean vibrational frequency (as obtained from the Einstein temperature) decreased with decreasing nanoparticle size. This reduction was attributed to the greater influence of the loosely bound, under-coordinated surface atoms prevailing over the effects of capillary pressure, the former enhancing the low frequency modes of the vibrational density of statesThis work was financially supported by the Australian Synchrotron and the Australian Research Council with access to equipment provided by the Australian Nanofabrication Facility

High-sensitivity microfluidic calorimeters for biological and chemical applications

High-sensitivity microfluidic calorimeters raise the prospect of achieving high-throughput biochemical measurements with minimal sample consumption. However, it has been challenging to realize microchip-based calorimeters possessing both high sensitivity and precise sample-manipulation capabilities. Here, we report chip-based microfluidic calorimeters capable of characterizing the heat of reaction of 3.5-nL samples with 4.2-nW resolution. Our approach, based on a combination of hard- and soft-polymer microfluidics, provides both exceptional thermal response and the physical strength necessary to construct high-sensitivity calorimeters that can be scaled to automated, highly multiplexed array architectures. Polydimethylsiloxane microfluidic valves and pumps are interfaced to parylene channels and reaction chambers to automate the injection of analyte at 1 nL and below. We attained excellent thermal resolution via on-chip vacuum encapsulation, which provides unprecedented thermal isolation of the minute microfluidic reaction chambers. We demonstrate performance of these calorimeters by resolving measurements of the heat of reaction of urea hydrolysis and the enthalpy of mixing of water with methanol. The device structure can be adapted easily to enable a wide variety of other standard calorimeter operations; one example, a flow calorimeter, is described

The relation between sea ice thickness and freeboard in the Arctic

Retrieval of Arctic sea ice thickness from CryoSat-2 radar altimeter freeboard data requires observational data to verify the relation between these two variables. In this study in-situ ice and snow data from 689 observation sites, obtained during the Sever expeditions in the 1980s, have been used to establish an empirical relation between thickness and freeboard of FY ice in late winter. Estimates of mean and variability of snow depth, snow density and ice density were produced on the basis of many field observations. These estimates have been used in the hydrostatic equilibrium equation to retrieve ice thickness as a function of ice freeboard, snow depth and snow/ice density. The accuracy of the ice thickness retrieval has been calculated from the estimated variability in ice and snow parameters and error of ice freeboard measurements. It is found that uncertainties of ice density and freeboard are the major sources of error in ice thickness calculation. For FY ice, retrieval of ≈ 1.0 m (2.0 m) thickness has an uncertainty of 46% (37%), and for MY ice, retrieval of 2.4 m (3.0 m) thickness has an uncertainty of 20% (18%), assuming that the freeboard error is ± 0.03 m for both ice types. For MY ice the main uncertainty is ice density error, since the freeboard error is relatively smaller than that for FY ice. If the freeboard error can be reduced to 0.01 m by averaging measurements from CryoSat-2, the error in thickness retrieval is reduced to about 32% for a 1.0 m thick FY floe and to about 18% for a 2.4 m thick MY floe. The remaining error is dominated by uncertainty in ice density. Provision of improved ice density data is therefore important for accurate retrieval of ice thickness from CryoSat-2 data

Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure

We present an experimental lattice location study of Ga atoms in Ge after ion implantation at elevated temperature (250°C). Using extended x-rayabsorption fine structure (EXAFS) experiments and a dedicated sample preparation method, we have studied the lattice location of Ga atoms in Ge with a concentration ranging from 0.5 at. % down to 0.005 at. %. At Ga concentrations ≤0.05 at.%, all Ga dopants are substitutional directly after ion implantation, without the need for post-implantation thermal annealing. At higher Ga concentrations, a reduction in the EXAFS amplitude is observed, indicating that a fraction of the Ga atoms is located in a defective environment. The local strain induced by the Ga atoms in the Ge matrix is independent of the Ga concentration and extends only to the first nearest neighbor Ge shell, where a 1% contraction in bond length has been measured, in agreement with density functional theory calculations.We acknowledge the support from the Research Foundation Flanders, the epi-team from imec, the KU Leuven GOA 09/06 project, the IUAP program P6/42 and the Australian Research Council. S.C. acknowledges support from OCAS NV by an OCAS-endowed chair at Ghent University

Scanning Electron Microscopy of the Human Thyroid Gland and its Disorders

The characteristic scanning electron microscopic features of the normal thyroid gland, benign thyroid lesions such as nodular (adenomatous) and colloid goitre, adenomas and thyroiditis, and malignant tumors such as papillary carcinoma, follicular carcinoma, anaplastic carcinoma and medullary carcinoma are described. One or more cilia are present in the center of the follicular surface of almost every epithelial cell in the normal thyroid gland as well as in most goitres. Their number is reduced in adenomas and differentiated carcinomas. Medullary carcinomas and anaplastic carcinomas usually lack cilia. Variation in distribution and appearance of microvilli seems to be related to functional differences in the normal thyroid and goitres. In neoplastic conditions the abundance of microvilli steadily decreases from ordinary papillary carcinomas to follicular variants of papillary carcinoma and to follicular carcinoma. Most of the cells in medullary carcinoma and anaplastic carcinoma have few or no microvilli. Benign and neoplastic Hürthle cells have a very characteristic appearance. Distinct, smooth-surfaced cells are interspersed among cells rich in microvilli. The literature is reviewed. Our own experience from examinations of 264 thyroid specimens is included

Amorphization of Cu nanoparticles: effects on surface plasmon resonance

Crystalline copper nanoparticles (NPs) were formed in silica by multi-energy MeV ion implantations and then transformed to amorphous NPs by irradiation with 5 MeV Sn3+ ions. Optical absorptionspectra of both the phases were evaluated in the ultra-violet to near-infrared regions. Compared with corresponding crystalline NPs of the same mean diameter, the amorphous NPs showed a low-energy shift of the surface plasmon resonance around 2.2 eV and less prominent absorptionstructure around 4 eV. These differences are explained by a strongly reduced electron mean-free-path in the amorphous NPs due to the loss of lattice periodicity