6 research outputs found
Polarization sensitive silicon photodiodes using nanostructured metallic grids
In this paper, we present the design, fabrication, and characterization of wire grid polarizers. These polarizers show high extinction ratios and high transmission with structure dimensions that are compatible with current complementary metal-oxide-semiconductor (CMOS) technology. To design these wire grids, we first analyze the transmission properties of single apertures. From the understanding of a single aperture, we apply a modal expansion method to model wire grids. The most promising grids are fabricated on both a glass substrate and CMOS photodiode. An extinction ratio higher than 200 is measured
Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction
The ability to detect light over a broad spectral range is central for
practical optoelectronic applications, and has been successfully demonstrated
with photodetectors of two-dimensional layered crystals such as graphene and
MoS2. However, polarization sensitivity within such a photodetector remains
elusive. Here we demonstrate a linear-dichroic broadband photodetector with
layered black phosphorus transistors, using the strong intrinsic linear
dichroism arising from the in-plane optical anisotropy with respect to the
atom-buckled direction, which is polarization sensitive over a broad bandwidth
from 400 nm to 3750 nm. Especially, a perpendicular build-in electric field
induced by gating in black phosphorus transistors can spatially separate the
photo-generated electrons and holes in the channel, effectively reducing their
recombination rate, and thus enhancing the efficiency and performance for
linear dichroism photodetection. This provides new functionality using
anisotropic layered black phosphorus, thereby enabling novel optical and
optoelectronic device applications.Comment: 18 pages, 5 figures in Nature Nanotechnology 201