Energy sensitive X-ray phase contrast imaging with a CdTe-Timepix3 detector

The Timepix3 is a photon counting semiconductor detector that enables to simultaneously measure the energy and time of arrival of each incident X- ray photon. These properties, along with the high spatial resolution and high efficiency, due to the CdTe sensor material, can be exploited for several imaging applications, such as X-ray phase contrast imaging (XPCI). XPCI relies on the phase shift suffered by X-rays when traversing the sample. This study focuses on the free-space propagation XPCI and single mask edge illumination XPCI methods, which are two approaches that are well suited for laboratory implementations. Since both techniques are highly sensitive to charge-sharing, the Timepix3 energy and time information for each photon are used to minimize this effect by using pixel clustering methods. In addition, the performance of both XPCI techniques across a 30kVp source spectrum is studied using the energy-resolving capabilities of the detector. In both cases, the phase contrast and signal-to-noise ratio (SNR) are assessed as a function of different energy. Finally, it is demonstrated that phase contrast enhancement is feasible with pixel clustering and energy-selection for both XPCI techniques

Pixel sensitivity variation in a CdTe-Medipix2 detector using poly-energetic x-rays

We have a 1-mm-thick cadmium telluride (CdTe) sensor bump-bonded to a Medipix2 readout chip. This detector has been characterized using a poly-energetic x-ray beam. Open beam images (i.e. without an attenuating specimen between the x-ray source and the detector) have been acquired at room temperature using the MARS-CT system. Profiles of various rows and columns were analyzed for one hundred, 35-ms exposures taken with a bias voltage of -300 V (operating in electron collection mode). A region of increased sensitivity is observed around the edges of the detector. A reasonably periodic, repeatable variation in pixel sensitivity is observed. Some small regions with very low sensitivity and others with zero signals are also observed. Surrounding these regions are circular rings of pixels with higher counts. At higher flux (higher tube current in the x-ray source) there is evidence of saturation of the detector assembly. In this paper we present our understanding of the origin of these features and demonstrate the improved image quality obtained after correcting for these variations

Multi-contrast computed laminography at ANKA light source

X-ray computed laminography has been developed as a non-destructive imaging technique for inspecting laterally extended objects. Benefiting from a parallel-beam geometry, high photon flux of synchrotron sources and modern high-resolution detector systems, synchrotron radiation computed laminography (SRCL) results in a powerful three-dimensional microscopy technique. SRCL can be combined with different contrast modes, such as absorption, phase and dark-field contrasts, in order to provide complementary information for the same specimen. Here we show the development of SRCL at the TopoTomo beamline of the ANKA light source. A novel instrumentation design is reported and compared to the existing one. For this design, experimental results from different contrast modalities are shown

Characterization of photon counting pixel detectors based on semi-insulating GaAs sensor material

Hybrid semiconductor pixel detectors are considered of high interest for synchrotron applications like diffraction and imaging experiments. However, at photon energies above 30 keV, high-Z sensor materials have to be used due to the weak absorption of the most commonly used sensor material, for instance silicon wafers with a thickness of a few hundred μm. Besides materials like CdTe and Ge, semi-insulating, chromium compensated SI-GaAs(Cr) proves to be a promising sensor material for applications with X-rays in the mid-energy range up to ~60 keV. In this work, material characterisation of SI-GaAs(Cr) wafers by electrical measurements and synchrotron white beam topography as well as the characterization and application of pixel detector assemblies based on Medipix readout chips bump-bonded to 500 μm thick SI-GaAs(Cr) sensors are presented. The results show a very homogeneous material with high resistivity and good electrical properties of the electrons as well as a very promising imaging performance of the detector assemblies

Distribution of zinc, resistivity, and photosensitivity in a Vertical Bridgman grown Cd1-xZnxTe ingot.

We present the results of a comprehensive study of distribution of zinc, resistivity, and photosensitivity in a Cd{sub 1-x}Zn{sub x}Te ingot grown by the Vertical Bridgman method. We used several complementary methods, viz., glow discharge mass spectroscopy, photoluminescence-, resistivity-, and photosensitivity-mapping, along with photo-induced current transient spectroscopy to characterize the material. We identified electronic levels in the band-gap responsible for compensation, recombination, and photosensitivity

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

The effect of HgI2 crystal encapsulation using different polymer resins, with the intent of avoiding the oxidation of the crystal surface, was evaluated in this work. The crystal was purified and grown by the physical vapor transport (PVT) technique modified. Systematic measurements were carried out for evaluating the stoichiometry, structure orientation, surface morphology and impurity of the crystal grown. The purer region of the crystal grown was selected to be prepared as a radiation detector, applying water-based conductive ink contacts and copper wire on the crystal surfaces. After that, the crystal was encapsulated with a polymeric resin which insulates atmospheric gases, aiming to improve the stability of the HgI2 detector. Four resins were used for crystal encapslation and the performance of the detector depended on the composition of the resins used. Among the four resins studied to evaluate the influence of encapsulation on the performance of crystals, as a radiation detector, the best result of resistivity and energy spectrum was obtained for the resin #3 (50% - 100% of Methylacetate and 5% - 10% of n-butylacetate). The encapsulation of crystals with polymer resins, performed with the intent of avoiding the oxidation of the crystal surface, did not compromise the measurements and were fully capable of detecting the presence of gamma radiation. The stability of the encapsulated HgI2 crystal detector was of up to 78 hs, while the stability found for HgI2 detector no encapsulated was in order 3 ~4 hs

Pixel sensitivity variation in a CdTe-Medipix2 detector using poly-energetic x-rays

We have a 1-mm-thick cadmium telluride (CdTe) sensor bump-bonded to a Medipix2 readout chip. This detector has been characterized using a poly-energetic x-ray beam. Open beam images (i.e. without an attenuating specimen between the x-ray source and the detector) have been acquired at room temperature using the MARS-CT system. Profiles of various rows and columns were analyzed for one hundred, 35-ms exposures taken with a bias voltage of -300 V (operating in electron collection mode). A region of increased sensitivity is observed around the edges of the detector. A reasonably periodic, repeatable variation in pixel sensitivity is observed. Some small regions with very low sensitivity and others with zero signals are also observed. Surrounding these regions are circular rings of pixels with higher counts. At higher flux (higher tube current in the x-ray source) there is evidence of saturation of the detector assembly. In this paper we present our understanding of the origin of these features and demonstrate the improved image quality obtained after correcting for these variations