Error Probabilities for Optical Receivers That Employ Dynamically Biased Avalanche Photodiodes

A novel theory was recently reported for the avalanche multiplication process in avalanche photodiodes (APDs) under dynamic reverse-biasing conditions. It has been shown theoretically that the bit-synchronized, periodic modulation of the electric field in the multiplication region can offer improvements in the gain-bandwidth product by reducing intersymbol interference in optical receivers. This paper reports a rigorous formulation of the sensitivity of optical receivers that employ dynamically biased APDs. To enable the sensitivity analysis, a recurrence theory is developed to calculate the joint probability distribution function (PDF) of the stochastic gain and avalanche buildup time in APDs that are operated under dynamic biasing. It is shown that in an ideal buildup-time limited scenario, a minimum receiver sensitivity of -20 dBm is predicted at an optimal gain of approximately 47 for a 60 Gb/s communication system, compared to a minimum of 0 dBm in the static-bias case. The receiver sensitivity analysis also reveals that, as the peak-to-peak voltage of the dynamic reverse bias increases, the device optimal gain increases while maintaining a short avalanche buildup time and reduced ISI. Of course, a point of diminishing return exists in practice when the tunneling current in the multiplication region becomes dominant

Breaking the Buildup-time Limit of sensitivity in Avalanche Photodiodes by Dynamic Biasing

Avalanche photodiodes (APDs) are the preferred photodetectors for direct-detection, high data-rate long-haul optical telecommunications. APDs can detect low-level optical signals due to their internal amplification of the photon-generated electrical current, which is attributable to the avalanche of electron and hole impact ionizations. Despite recent advances in APDs aimed at reducing the average avalanche-buildup time, which causes intersymbol interference and compromises receiver sensitivity at high data rates, operable speeds of commercially available APDs have been limited to 10Gbps. We report the first demonstration of a dynamically biased APD that breaks the traditional sensitivity-versus-speed limit by employing a data-synchronous sinusoidal reverse-bias that drastically suppresses the average avalanche-buildup time. Compared with traditional DC biasing, the sensitivity of germanium APDs at 3Gbps is improved by 4.3 dB, which is equivalent to a 3,500-fold reduction in the bit-error rate. The method is APD-type agnostic and it promises to enable operation at rates of 25Gbps and beyond

Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes

Avalanche photodiodes (APDs) are essential components in quantum key distribution systems and active imaging systems requiring both ultrafast response time to measure photon time of flight and high gain to detect low photon flux. The internal gain of an APD can improve system signal-to-noise ratio (SNR). Excess noise is typically kept low through the selection of material with intrinsically low excess noise, using separate-absorption-multiplication (SAM) heterostructures, or taking advantage of the dead-space effect using thin multiplication regions. In this work we demonstrate the first measurement of excess noise and gain-bandwidth product in III–V nanopillars exhibiting substantially lower excess noise factors compared to bulk and gain-bandwidth products greater than 200 GHz. The nanopillar optical antenna avalanche detector (NOAAD) architecture is utilized for spatially separating the absorption region from the avalanche region via the NOA resulting in single carrier injection without the use of a traditional SAM heterostructure