Insuficiencia renal aguda (IRA) en unidades de cuidados intensivos

La Injuria Renal Aguda es reconocida por su impacto en la evolución de los pacientes admitidos en Unidades de cuidados Intensivos. La amplia variedad de definiciones utilizadas en los diversos estudios es responsable de las diferencias en los reportes de incidencia y de Mortalidad asociada.Facultad de Ciencias Médica

Detección y seguimiento de insuficiencia renal en población hospitalaria

La insuficiencia renal (IR) presenta una elevada prevalencia en la población general (10%). La detección temprana es necesaria para su mejor control evolutivo; incluso en pacientes asintomáticos. Se propuso detectar a lo largo de un año la tasa de incidencia de falla renal en pacientes internados.Facultad de Ciencias Médica

Monte Carlo modeling in the low-energy domain of the secondary electron emission of polymethylmethacrylate for critical-dimension scanning electron microscopy

The main scattering mechanisms governing the transport of electrons in PMMA in an energy domain ranging from the energy of the primary electron beam down to few hundreds of meV are identified. A quantitative Monte Carlo model for the emission of secondary electrons is developed to be applied for critical dimensions extraction from highresolution scanning electron microscopy SEM images. Selected results are presented, which demonstrate the accuracy of the proposed approach. © 2010 Society of Photo-Optical Instrumentation Engineers

Lifetime extrapolation for IGBT modules under realistic operation conditions

In this paper a systematic approach is presented for extrapolating the lifetime due to bond wire lift-off in IGBT modules submitted to cyclic loading. Application profiles of the device are considered, as they are usually encountered in real current converters for railway traction systems. The proposed lifetime prediction scheme is based on the principle of the linear accumulation of the fatigue damage and takes into account the redundancy of the bond wires

A novel thermomechanics-based lifetime prediction model for cycle fatigue failure mechanisms in power semiconductors

In this paper, we propose different procedures to extract the statistical distribution of the thermal cycles suffered by power devices submitted to arbitrary mission profiles and we discuss the different lifetimes predicted by them under the assumption of linear accumulation of the damage produced by low cycling fatigue. Furthermore, we introduce a novel prediction procedure, which is based on some fundamental equations, which take into consideration the creep experienced by compliant materials when they are submitted to thermal cycles