Self consistent modelling of PHEMT devices for millimeter wave small signal, noise and power applications

Accurate simulation of PHEMT based GaAs MMIC ’s requires a bias dependent model that can be used in both small signal and large signal analysis and is accurate over a wide range of applied bias.The majority of models that are supplied with the commercial high frequency simulators have limitations that prevent this goal being achieved.The model areas that require attention are the symmetry of the model at drain-source voltages close to zero,use of the correct time delays within the device and a more precise inclusion of the bias dependent intrinsic noise processes.In this paper an approach to the generation of a large signal model is described that attempts to reconcile these requirements

Advanced meander gate p-HEMT model for accurate harmonic modeling of switch MMIC designs

This paper presents a non-linear model of a meander gate p-HEMT for switch design. The model combines a modified Parker-Skellern IV form with a custom charge model to accurately predict large signal performance of meander-gate based switches. Comparison between modeled and measured results of a 0.5 mm gate length SPDT switch shows a accurate prediction of the 2nd and 3rdHarmonic generation at the output. Index Terms — Design Automation, Microwave switches, MMICs, Mobile Communication, Modeling