High-Resolution X-Ray Reflectivity Study of Thin Layered Pt-Electrodes for Integrated Ferroelectric Devices

The structural interface properties of layered Pt/Ti/SiO2/Si electrodes have been investigated using high-resolution specular and diffuse x-ray reflectivity under grazing angles. Currently this multilayer system represents a technological standard as bottom electrodes for ferroelectric thin film applications. For the electronic and ferroelectric properties of integrated devices, the film-electrode interface is of crucial importance. We focused on Pt-100nm/Ti-10nm/SiO2/Si electrodes prepared under annealing conditions as employed in industrial processing, prior to the deposition of ferroelectric films. The comparison between annealed and non-annealed electrodes clearly revealed strong interfacial effects due to interdiffusion and oxidation of Ti, especially at the Pt-Ti interface. Migration of Ti into the Pt-layer results in a clear shift of the critical angle due to enclosure of TiO(2-x) within the Pt-layer. The heterogeneous distribution of TiO(2-x) suggests a diffusion mechanism mainly along the Pt-grain boundaries. At the SiO2 interface a relatively weakly oxidized, remaining Ti-layer of 20 Angstroem could be found, which is most probably correlated with the remaining adhesion to the substrate.Comment: presented at the X-TOP Conference on High-Resolution X-ray Diffraction and Topography (Sept.13-15 2000), submitted to Journal of Physics D: Applied Physic

The Overseeing Mother: Revisiting the Frontal-Pose Lady in the Wu Family Shrines in Second Century China

Located in present-day Jiaxiang in Shandong province, the Wu family shrines built during the second century in the Eastern Han dynasty (25–220) were among the best-known works in Chinese art history. Although for centuries scholars have exhaustively studied the pictorial programs, the frontal-pose female image situated on the second floor of the central pavilion carved at the rear wall of the shrines has remained a question. Beginning with the woman’s eyes, this article demonstrates that the image is more than a generic portrait (“hard motif ”), but rather represents “feminine overseeing from above” (“soft motif ”). This synthetic motif combines three different earlier motifs – the frontal-pose hostess enjoying entertainment, the elevated spectator, and the Queen Mother of the West. By creatively fusing the three motifs into one unity, the Jiaxiang artists lent to the frontal-pose lady a unique power: she not only dominated the center of the composition, but also, like a divine being, commanded a unified view of the surroundings on the lofty building, hence echoing the political reality of the empress mother’s “overseeing the court” in the second century during Eastern Han dynasty

SrBi 2Ta 2O 9 ferroelectric thin film capacitors: degradation in a hydrogen ambient

The effects of annealing in forming gas 5% hydrogen, 95% nitrogen; FGA) are studied on spin-coated SrBi2Ta2O9 (SBT) thin films. SBT films on a platinum bottom electrode are characterized with and without a platinum top electrode. Films are characterized by residual stress measurements, scanning electron microscopy (SEM), Auger electron spectroscopy (AES), high-temperature X-ray diffraction (HT-XRD) and secondary ion mass spectrometry (SIMS). To determine the degree of strain, lattice constants of Pt are measured by X-ray diffraction (XRD). HT-XRD of blanket SBT/Pt/Ti films in forming gas revealed that the bismuth-layered perovskite structure of SBT is stable up to approximately 500 degreesC. After formation of an intermediate phase between 550 degreesC and 700 degreesC, SBT changes its structure to an amorphous phase. SIMS analysis of Pt/SBT/Pt samples annealed in deuterated forming gas (5% D-2, 95% N-2) showed that hydrogen accumulates in the SBT layer and at the platinum interfaces next to the SBT. After FGA of blanket SBT films, tall platinum-bismuth whiskers are seen on the SBT surface. It is confirmed that these whiskers originate from the platinum bottom electrode and grow through the SBT layer. FGA of the entire Pt/SBT/Pt/Ti stack shows two different results. For the samples with a high-temperature annealing (HTA) step in oxygen after top electrode patterning, peeling of the top electrode is observed after FGA. For the samples without a HTA step, no peeling is observed after FGA. The residual stress at room temperature is measured for blanket platinum wafers deposited at different temperatures. It is found that an increase in tensile stress caused by the HTA step in oxygen is followed by a decrease in stress caused by the hydrogen in the forming gas. Without HTA, however, an increase of stress is observed after FGA