The Dirichet-Multinomial model for multivariate randomized response data and small samples

In survey sampling the randomized response (RR) technique can be used to obtain truthful answers to sensitive questions. Although the individual answers are masked due to the RR technique, individual (sensitive) response rates can be estimated when observing multivariate response data. The beta-binomial model for binary RR data will be generalized to handle multivariate categorical RR data. The Dirichlet-multinomial model for categorical RR data is extended with a linear transformation of the masked individual categorical-response rates to correct for the RR design and to retrieve the sensitive categorical-response rates even for small data samples. This specification of the Dirichlet-multinomial model enables a straightforward empirical Bayes estimation of the model parameters. A constrained-Dirichlet prior will be introduced to identify homogeneity restrictions in response rates across persons and/or categories. The performance of the full Bayes parameter estimation method is verified using simulated data. The proposed model will be applied to the college alcohol problem scale study, where students were interviewed directly or interviewed via the randomized response technique about negative consequences from drinking. (Contains 5 tables.

Stacking Order dependent Electric Field tuning of the Band Gap in Graphene Multilayers

The effect of different stacking order of graphene multilayers on the electric field induced band gap is investigated. We considered a positively charged top and a negatively charged back gate in order to independently tune the band gap and the Fermi energy of three and four layer graphene systems. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We found that the gap for trilayer graphene with the ABC stacking is much larger than the corresponding gap for the ABA trilayer. Also we predict that for four layers of graphene the energy gap strongly depends on the choice of stacking, and we found that the gap for the different types of stacking is much larger as compared to the case of Bernal stacking. Trigonal warping changes the size of the induced electronic gap by approximately 30% for intermediate and large values of the induced electron density

D- shallow donor near a semiconductor-metal and a semiconductor-dielectric interface

The ground state energy and the extend of the wavefunction of a negatively charged donor (D-) located near a semiconductor-metal or a semiconductor-dielectric interface is obtained. We apply the effective mass approximation and use a variational two-electron wavefunction that takes into account the influence of all image charges that arise due to the presence of the interface, as well as the correlation between the two electrons bound to the donor. For a semiconductor-metal interface, the D- binding energy is enhanced for donor positions d>1.5a_B (a_B is the effective Bohr radius) due to the additional attraction of the electrons with their images. When the donor approaches the interface (i.e. d<1.5a_B) the D- binding energy drops and eventually it becomes unbound. For a semiconductor-dielectric (or a semiconductor-vacuum) interface the D- binding energy is reduced for any donor position as compared to the bulk case and the system becomes rapidly unbound when the donor approaches the interface.Comment: Submitted to Phys. Rev. B on 19 November 200

Approximations in L1L^1 with convergent Fourier series

For a separable finite diffuse measure space $\mathcal{M}$ and an orthonormal basis $\{\varphi_n\}$ of $L^2(\mathcal{M})$ consisting of bounded functions $\varphi_n\in L^\infty(\mathcal{M})$, we find a measurable subset $E\subset\mathcal{M}$ of arbitrarily small complement $|\mathcal{M}\setminus E|<\epsilon$, such that every measurable function $f\in L^1(\mathcal{M})$ has an approximant $g\in L^1(\mathcal{M})$ with $g=f$ on $E$ and the Fourier series of $g$ converges to $g$, and a few further properties. The subset $E$ is universal in the sense that it does not depend on the function $f$ to be approximated. Further in the paper this result is adapted to the case of $\mathcal{M}=G/H$ being a homogeneous space of an infinite compact second countable Hausdorff group. As a useful illustration the case of $n$-spheres with spherical harmonics is discussed. The construction of the subset $E$ and approximant $g$ is sketched briefly at the end of the paper

Diagrammatic quantum field formalism for localized electrons

We introduce a diagrammatic quantum field formalism for the evaluation of normalized expectation values of operators, and suitable for systems with localized electrons. It is used to develop a convergent series expansion for the energy in powers of overlap integrals of single-particle orbitals. This method gives intuitive and practical rules for writing down the expansion to arbitrary order of overlap, and can be applied to any spin configuration and to any dimension. Its applicability for systems with well localized electrons has been illustrated with examples, including the two-dimensional Wigner crystal and spin-singlets in the low-density electron gas.Comment: 13 pages, 0 figure

Refined EnE_n Chern-Simons theory

The partition function of refined Chern-Simons theory on 3d sphere for the exceptional $E_n$ gauge algebras is presented in terms of multiple sine functions. Gopakumar-Vafa (BPS) approximation is calculated and presented in the form of some refined topological string partition function.Comment: On the basis of the talk given at the workshop SQS'2