Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction

We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with different n+-GaAs thickness and doping density grown on identical p-AlGaAs/p-GaAs/n-AlGaAs light emitting diode (LED) structures. Electroluminescence (EL) polarization of the surface emission was measured under the Faraday configuration with external magnetic field. All samples have the bias dependence of the EL polarization, and higher EL polarization is obtained in samples in which n+-GaAs is completely depleted at zero bias. The EL polarization is found to be sensitive to the bias condition for both the (Ga,Mn)As/n+-GaAs tunnel junction and the LED structure.Comment: 4pages, 4figures, 1table, To appear in Physica

Clustering induced suppression of ferromagnetism in diluted magnets

Ferromagnetism in diluted magnets in the compensated regime p << x is shown to be suppressed by the formation of impurity spin clusters. The majority bulk spin couplings are shown to be considerably weakened by the preferential accumulation of holes in spin clusters, resulting in low-energy magnon softening and enhanced low-temperature decay of magnetic order. A locally self-consistent magnon renormalization analysis of spin dynamics shows that although strong intra-cluster correlations tend to prolong global order, T_c is still reduced compared to the ordered case.Comment: published version, 5 pages, 4 figure

Integral Transforms for Conformal Field Theories with a Boundary

A new method is developed for solving the conformally invariant integrals that arise in conformal field theories with a boundary. The presence of a boundary makes previous techniques for theories without a boundary less suitable. The method makes essential use of an invertible integral transform, related to the radon transform, involving integration over planes parallel to the boundary. For successful application of this method several nontrivial hypergeometric function relations are also derived.Comment: 20 pagess, LateX fil

Domain wall dynamics in a single CrO2_2 grain

Recently we have reported on the magnetization dynamics of a single CrO$_2$ grain studied by micro Hall magnetometry (P. Das \textit{et al.}, Appl. Phys. Lett. \textbf{97} 042507, 2010). For the external magnetic field applied along the grain's easy magnetization direction, the magnetization reversal takes place through a series of Barkhausen jumps. Supported by micromagnetic simulations, the ground state of the grain was found to correspond to a flux closure configuration with a single cross-tie domain wall. Here, we report an analysis of the Barkhausen jumps, which were observed in the hysteresis loops for the external field applied along both the easy and hard magnetization directions. We find that the magnetization reversal takes place through only a few configuration paths in the free-energy landscape, pointing to a high purity of the sample. The distinctly different statistics of the Barkhausen jumps for the two field directions is discussed.Comment: JEMS Conference, to appear in J. Phys. Conf. Se

Carrier States and Ferromagnetism in Diluted Magnetic Semiconductors

Applying the dynamical coherent potential approximation to a simple model, we have systematically studied the carrier states in $A_{1-x}$Mn$_xB$-type diluted magnetic semiconductors (DMS's). The model calculation was performed for three typical cases of DMS's: The cases with strong and moderate exchange interactions in the absence of nonmagnetic potentials, and the case with strong attractive nonmagnetic potentials in addition to moderate exchange interaction. When the exchange interaction is sufficiently strong, magnetic impurity bands split from the host band. Carriers in the magnetic impurity band mainly stay at magnetic sites, and coupling between the carrier spin and the localized spin is very strong. The hopping of the carriers among the magnetic sites causes ferromagnetism through a {\it double-exchange (DE)-like} mechanism. We have investigated the condition for the DE-like mechanism to operate in DMS's. The result reveals that the nonmagnetic attractive potential at the magnetic site assists the formation of the magnetic impurity band and makes the DE-like mechanism operative by substantially enhancing the effect of the exchange interaction. Using conventional parameters we have studied the carrier states in Ga$_{1-x}$Mn$_x$As. The result shows that the ferromagnetism is caused through the DE-like mechanism by the carriers in the bandtail originating from the impurity states.Comment: 20 pages, 14 figure

Eigenvalue distribution of the Dirac operator at finite temperature with (2+1)-flavor dynamical quarks using the HISQ action

We report on the behavior of the eigenvalue distribution of the Dirac operator in (2+1)-flavor QCD at finite temperature, using the HISQ action. We calculate the eigenvalue density at several values of the temperature close to the pseudocritical temperature. For this study we use gauge field configurations generated on lattices of size $32^3 \times 8$ with two light quark masses corresponding to pion masses of about 160 and 115 MeV. We find that the eigenvalue density below $T_c$ receives large contributions from near-zero modes which become smaller as the temperature increases or the light quark mass decreases. Moreover we find no clear evidence for a gap in the eigenvalue density up to 1.1$T_c$. We also analyze the eigenvalue density near $T_c$ where it appears to show a power-law behavior consistent with what is expected in the critical region near the second order chiral symmetry restoring phase transition in the massless limit.Comment: 7 pages, 7 figures, talk presented at the XXIX International Symposium on Lattice Field Theory, July 10-16 2011, Squaw Valley, Lake Tahoe, California, US

Domain-wall resistance in ferromagnetic (Ga,Mn)As

A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is one order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced misstracing of the carrier spins subject to spatially varying magnetization