9,950 research outputs found

    Addressing spin transitions on 209Bi donors in silicon using circularly-polarized microwaves

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    Over the past decade donor spin qubits in isotopically enriched 28^{28}Si have been intensely studied due to their exceptionally long coherence times. More recently bismuth donor electron spins have become popular because Bi has a large nuclear spin which gives rise to clock transitions (first-order insensitive to magnetic field noise). At every clock transition there are two nearly degenerate transitions between four distinct states which can be used as a pair of qubits. Here it is experimentally demonstrated that these transitions are excited by microwaves of opposite helicity such that they can be selectively driven by varying microwave polarization. This work uses a combination of a superconducting coplanar waveguide (CPW) microresonator and a dielectric resonator to flexibly generate arbitrary elliptical polarizations while retaining the high sensitivity of the CPW

    Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon

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    We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins

    Stark shift and field ionization of arsenic donors in 28^{28}Si-SOI structures

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    We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28^{28}Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to \sim 2 V/μ\mum to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the 28^{28}Si SOI layer and find a contact hyperfine Stark parameter of ηa=1.9±0.2×103μ\eta_a=-1.9\pm0.2\times10^{-3} \mum2^2/V2^2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.Comment: 5 pages, 3 figure

    Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires

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    Based on first-principles density functional theory calculations we explore electronic and magnetic properties of experimentally producible sandwiches and infinite wires made of repeating benzene molecules and transition-metal atoms of V, Nb, and Ta. We describe the bonding mechanism in the molecules and in particular concentrate on the origin of magnetism in these structures. We find that all the considered systems have sizable magnetic moments and ferromagnetic spin-ordering, with the single exception of the V3-Bz4 molecule. By including the spin-orbit coupling into our calculations we determine the easy and hard axes of the magnetic moment, the strength of the uniaxial magnetic anisotropy energy (MAE), relevant for the thermal stability of magnetic orientation, and the change of the electronic structure with respect to the direction of the magnetic moment, important for spin-transport properties. While for the V-based compounds the values of the MAE are only of the order of 0.05-0.5 meV per metal atom, increasing the spin-orbit strength by substituting V with heavier Nb and Ta allows to achieve an increase in anisotropy values by one to two orders of magnitude. The rigid stability of magnetism in these compounds together with the strong ferromagnetic ordering makes them attractive candidates for spin-polarized transport applications. For a Nb-benzene infinite wire the occurrence of ballistic anisotropic magnetoresistance is demonstrated.Comment: 23 pages, 8 figure

    Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

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    We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.Comment: 4 pages, 4 figure

    Coupling of Coronal and Heliospheric Magnetohydrodynamic Models: Solution Comparisons and Verification

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    Two well-established magnetohydrodynamic (MHD) codes are coupled to model the solar corona and the inner heliosphere. The corona is simulated using the MHD algorithm outside a sphere (MAS) model. The Lyon–Fedder–Mobarry (LFM) model is used in the heliosphere. The interface between the models is placed in a spherical shell above the critical point and allows both models to work in either a rotating or an inertial frame. Numerical tests are presented examining the coupled model solutions from 20 to 50 solar radii. The heliospheric simulations are run with both LFM and the MAS extension into the heliosphere, and use the same polytropic coronal MAS solutions as the inner boundary condition. The coronal simulations are performed for idealized magnetic configurations, with an out-of-equilibrium flux rope inserted into an axisymmetric background, with and without including the solar rotation. The temporal evolution at the inner boundary of the LFM and MAS solutions is shown to be nearly identical, as are the steady-state background solutions, prior to the insertion of the flux rope. However, after the coronal mass ejection has propagated through the significant portion of the simulation domain, the heliospheric solutions diverge. Additional simulations with different resolution are then performed and show that the MAS heliospheric solutions approach those of LFM when run with progressively higher resolution. Following these detailed tests, a more realistic simulation driven by the thermodynamic coronal MAS is presented, which includes solar rotation and an azimuthally asymmetric background and extends to the Earth’s orbit

    Oscillating grid turbulence in shear-thinning polymer solutions

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    Oscillating grid apparatuses are well known and convenient tools for the fundamental study of turbulence and its interaction with other phenomena since they allow to generate turbulence supposedly homogeneous, isotropic, and free of mean shear. They could, in particular, be used to study turbulence and mass transfer near the interface between non-Newtonian liquids and a gas, as already done in air-water situations. Although frequently used in water and Newtonian fluids, oscillating grid turbulence (OGT) generation has yet been rarely applied and never characterized in non-Newtonian media. The present work consists of a first experimental characterization of the flow properties of shear-thinning polymer (Xanthan Gum, XG) solutions stirred by an oscillating grid. Various polymer concentrations are tested for a single grid stirring condition. The dilute and semidilute entanglement concentration regimes are considered. Liquid phase velocities are measured by Particle Image Velocimetry. The existing mean flow established in the tank is described and characterized, as well as turbulence properties (intensity, decay rate, length scales, isotropy, etc.). OGT in dilute polymer solutions induces an enhanced mean flow compared to water, a similar decay behavior with yet different decay rates, and enhanced turbulence large scales and anisotropy. In the semidilute regime of XG, turbulence and mean flows are essentially damped by viscosity. The evolution of mean flow and turbulence indicators leads to the definition of several polymer concentration subregimes, within the dilute one. Critical concentrations around 20 ppm and 50 ppm are found, comparable to drag reduction characteristic concentrations
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