Properties of gallium oxide films obtained by HF-magnetron sputtering

The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Е t located 0.95 eV below the conduction band bottom

Properties of gallium oxide films obtained by HF-magnetron sputtering

The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Е t located 0.95 eV below the conduction band bottom