Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals.

In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics

Deformation Damage and Energy Evolution of Basalt Fiber Reinforced Concrete under the Triaxial Compression

To explore the law of energy evolution and the change of damage before and after specimen failure, the conventional triaxial compression tests (5, 10, 15, 20, and 30 MPa) of basalt fiber reinforced concrete (BFRC) with different fiber volume fractions (0, 0.2% and 0.4%) were carried out by MTS816 rock testing system, and the cyclic loading and unloading tests of BFRC with a fiber content of 0.2% were carried out. The experimental results show that the peak strength and strain of BFRC increase with the increase of confining pressure. Tensile failure occurs under low confining pressure, and shear failure occurs under high confining pressure. The best volume fraction of fiber is 0.2%. Under different confining pressures, the input energy, elastic energy, plastic properties, and dissipated energy of the samples first increase and then decrease to a stable level. The elastic energy and dissipated energy reach the maximum near the peak stress, while the input energy and plastic properties reach the maximum at the peak. At the same time, the damage increases continuously with the input of load under different confining pressures, indicating that the failure of the specimen is a process of energy accumulation

Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS2/WSe2

Abstract Nanosheet (NS) vertical‐stacked complementary field‐effect transistors (CFETs), where the NS n‐FET and NS p‐FET are vertically stacked and controlled using a common gate, would result in maximum device footprint reduction. However, silicon‐based transistor will become invalid due to mobility degradation and leakage current rising when scaling the thickness of channel and dielectric. Here, it is experimentally demonstrated that CFET can scaling down to 1 nm channel thickness with excellent performance, where chemical vapor deposition (CVD) one layer (1L) WSe2 p‐type NS FET is vertically stacked on top of CVD 1L MoS2 n‐type NS FET. Bottom MoS2 NS FET achieves high on‐state current of ION = 3.3 × 10−5 A µm µm−1 and low off‐state current of IOFF = 3.3 × 10−13 A µm µm−1 at VDS = 0.7 V, with the subthreshold swing reaching 80 mV dec−1. Top WSe2 NS FET achieves high on‐state current of ION = 1.2 × 10−5 A µm µm−1 and IOFF = 4 × 10−11 A µm µm−1 at VDS = −0.7 V, while the subthreshold swing reaching 150 mV dec−1. Statistical data of 22 CFET devices demonstrate excellent uniformity toward large‐area applications. The CFET based on large‐scale 2D materials breaks the limit of channel scaling and provides a technological base for future high‐performance and low‐power electronics

A Direct n+-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors

An inter-layer dielectric (ILD) deposition process to simultaneously form the conductive regions of self-aligned (SA) coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is demonstrated. N+-IGZO regions and excellent ohmic contact can be obtained without additional steps by using a magnetron sputtering process to deposit a SiOx ILD. The fabricated IGZO TFTs show a subthreshold swing (SS) of 94.16 mV/decade and a linear-region field-effect mobility (μFE) of 23.06 cm2/Vs. The channel-width-normalized source/drain series resistance (RSDW) extracted using the transmission line method (TLM) is approximately as low as 9.4 Ω·cm. The fabricated ring oscillator (RO) with a maximum oscillation frequency of 1.75 MHz also verifies the applicability of the TFTs

Elevated D-dimer is associated with increased 28-day mortality in acute-on-chronic liver failure in China: a retrospective study

Abstract Background Acute-on-chronic liver failure (ACLF) is a syndrome characterized by profound disrupted coagulation and fibrinolysis. Fibrinolytic marker D-dimer is increased in critically ill patients with cirrhosis which is associated with poorer prognosis. We aim to determine the potential association of D-dimer with the 28-day mortality in ACLF patients. Methods In a single center retrospective study performed in China, we collected data of 115 patients with ACLF from October 1, 2012 to December 31, 2016. We investigated correlations between D-dimer and other laboratory tests and prognostic scores. The relationship between D-dimer and 28-day mortality was explored by smoothing plot with an adjustment for potential confounders. Logistic regression analyses with crude and adjusted models were performed to explore the association of D-dimer with 28-day mortality in ACLF patients. Results In ACLF patients, D-dimer at admission was correlated with all prognostic scores (MELD-Na: r = 0.385, P < 0.001; CLIF-C ADs: r = 0.443, P < 0.001; CLIF-C ACLFs: r = 0.375, P < 0.001). A nonlinear relation between D-dimer and 28-day mortality was found with a turning point at 6.5 mg/L FEU. D-dimer level was independently associated with 28-day mortality with an adjusted odds ratio of [1.4 (1.0–1.9), P = 0.030] as continuous variable and [10.3 (1.3, 81.5), P = 0.028] as a classified variable with the cut-off of 6.5 mg/L FEU. An elevated D-dimer within the following 10 days also tended to be associated with higher risk of 28-day mortality [OR: 27.5 (0.9, 814.9), P = 0.055]. Conclusions Elevated D-dimer levels was associated with increased risk of 28-day mortality in patients with ACLF in China

Levistilide A Exerts a Neuroprotective Effect by Suppressing Glucose Metabolism Reprogramming and Preventing Microglia Polarization Shift: Implications for Parkinson’s Disease

The microglia, displaying diverse phenotypes, play a significant regulatory role in the development, progression, and prognosis of Parkinson’s disease. Research has established that glycolytic reprogramming serves as a critical regulator of inflammation initiation in pro-inflammatory macrophages. Furthermore, the modulation of glycolytic reprogramming has the potential to reverse the polarized state of these macrophages. Previous studies have shown that Levistilide A (LA), a phthalide component derived from Angelica sinensis, possesses a range of pharmacological effects, including anti-inflammatory, antioxidant, and neuroprotective properties. In our study, we have examined the impact of LA on inflammatory cytokines and glucose metabolism in microglia induced by lipopolysaccharide (LPS). Furthermore, we explored the effects of LA on the AMPK/mTOR pathway and assessed its neuroprotective potential both in vitro and in vivo. The findings revealed that LA notably diminished the expression of M1 pro-inflammatory factors induced by LPS in microglia, while leaving M2 anti-inflammatory factor expression unaltered. Additionally, it reduced ROS production and suppressed IκB-α phosphorylation levels as well as NF-κB p65 nuclear translocation. Notably, LA exhibited the ability to reverse microglial glucose metabolism reprogramming and modulate the phosphorylation levels of AMPK/mTOR. In vivo experiments further corroborated these findings, demonstrating that LA mitigated the death of TH-positive dopaminergic neurons and reduced microglia activation in the ventral SNpc brain region of the midbrain and the striatum. In summary, LA exhibited neuroprotective benefits by modulating the polarization state of microglia and altering glucose metabolism, highlighting its therapeutic potential

Genome sequencing of deep-sea hydrothermal vent snails reveals adaptions to extreme environments

Background: The scaly-foot snail (Chrysomallon squamiferum) is highly adapted to deep-sea hydrothermal vents and has drawn much interest since its discovery. However, the limited information on its genome has impeded further related research and understanding of its adaptation to deep-sea hydrothermal vents. Findings: Here, we report the whole-genome sequencing and assembly of the scaly-foot snail and another snail (Gigantopelta aegis), which inhabits similar environments. Using Oxford Nanopore Technology, 10X Genomics, and Hi-C technologies, we obtained a chromosome-level genome of C. squamiferum with an N50 size of 20.71 Mb. By constructing a phylogenetic tree, we found that these 2 deep-sea snails evolved independently of other snails. Their divergence from each other occurred ∼66.3 million years ago. Comparative genomic analysis showed that different snails have diverse genome sizes and repeat contents. Deep-sea snails have more DNA transposons and long terminal repeats but fewer long interspersed nuclear elements than other snails. Gene family analysis revealed that deep-sea snails experienced stronger selective pressures than freshwater snails, and gene families related to the nervous system, immune system, metabolism, DNA stability, antioxidation, and biomineralization were significantly expanded in scaly-foot snails. We also found 251 H-2 Class II histocompatibility antigen, A-U α chain-like (H2-Aal) genes, which exist uniquely in the Gigantopelta aegis genome. This finding is important for investigating the evolution of major histocompatibility complex (MHC) genes. Conclusion: Our study provides new insights into deep-sea snail genomes and valuable resources for further studies. </p

Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals.

In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics