The roles of Eu during the growth of eutectic Si in Al-Si alloys

Controlling the growth of eutectic Si and thereby modifying the eutectic Si from flake-like to fibrous is a key factor in improving the properties of Al-Si alloys. To date, it is generally accepted that the impurity-induced twinning (IIT) mechanism and the twin plane re-entrant edge (TPRE) mechanism as well as poisoning of the TPRE mechanism are valid under certain conditions. However, IIT, TPRE or poisoning of the TPRE mechanism cannot be used to interpret all observations. Here, we report an atomic-scale experimental and theoretical investigation on the roles of Eu during the growth of eutectic Si in Al-Si alloys. Both experimental and theoretical investigations reveal three different roles: (i) the adsorption at the intersection of Si facets, inducing IIT mechanism, (ii) the adsorption at the twin plane re-entrant edge, inducing TPRE mechanism or poisoning of the TPRE mechanism, and (iii) the segregation ahead of the growing Si twins, inducing a solute entrainment within eutectic Si. This investigation not only demonstrates a direct experimental support to the well-accepted poisoning of the TPRE and IIT mechanisms, but also provides a full picture about the roles of Eu atoms during the growth of eutectic Si, including the solute entrainment within eutectic Si

Aluminum depletion induced by complex co-segregation of carbon and boron in a {\Sigma} 5 [3 1 0] bcc-iron grain boundary

The local variation of grain boundary atomic structure and chemistry caused by segregation of impurities influences the macroscopic properties of poylcrystalline materials. Here, the effect of co-segregation of carbon and boron on the depletion of aluminum at a $\Sigma 5\,(3\,1\,0\,) [0\,0\,1]$ tilt grain boundary in a $\alpha-$Fe-$4~at.~\%$Al bicrystal was studied by combining atomic resolution scanning transmission electron microscopy, atom probe tomography and density functional theory calculations. The atomic grain boundary structural units mostly resemble kite-type motifs and the structure appears disrupted by atomic scale defects. Atom probe tomography reveals that carbon and boron impurities are co-segregating to the grain boundary reaching levels of >1.5 at.\%, whereas aluminum is locally depleted by approx. 2~at.\%. First-principles calculations indicate that carbon and boron exhibit the strongest segregation tendency and their repulsive interaction with aluminum promotes its depletion from the grain boundary. It is also predicted that substitutional segregation of boron atoms may contribute to local distortions of the kite-type structural units. These results suggest that the co-segregation and interaction of interstitial impurities with substitutional solutes strongly influences grain boundary composition and with this the properties of the interface.Comment: 26 pages, 10 Figures, 1 Tabl

Structure and Migration Mechanisms of Small Vacancy Clusters in Cu: A Combined EAM and DFT Study

Voids in face-centered cubic (fcc) metals are commonly assumed to form via the aggregation of vacancies; however, the mechanisms of vacancy clustering and diffusion are not fully understood. In this study, we use computational modeling to provide a detailed insight into the structures and formation energies of primary vacancy clusters, mechanisms and barriers for their migration in bulk copper, and how these properties are affected at simple grain boundaries. The calculations were carried out using embedded atom method (EAM) potentials and density functional theory (DFT) and employed the site-occupation disorder code (SOD), the activation relaxation technique nouveau (ARTn) and the knowledge led master code (KLMC). We investigate stable structures and migration paths and barriers for clusters of up to six vacancies. The migration of vacancy clusters occurs via hops of individual constituent vacancies with di-vacancies having a significantly smaller migration barrier than mono-vacancies and other clusters. This barrier is further reduced when di-vacancies interact with grain boundaries. This interaction leads to the formation of self-interstitial atoms and introduces significant changes into the boundary structure. Tetra-, penta-, and hexa-vacancy clusters exhibit increasingly complex migration paths and higher barriers than smaller clusters. Finally, a direct comparison with the DFT results shows that EAM can accurately describe the vacancy-induced relaxation effects in the Cu bulk and in grain boundaries. Significant discrepancies between the two methods were found in structures with a higher number of low-coordinated atoms, such as penta-vacancies and di-vacancy absortion by grain boundary. These results will be useful for modeling the mechanisms of diffusion of complex defect structures and provide further insights into the structural evolution of metal films under thermal and mechanical stress

Interstitial segregation has the potential to mitigate liquid metal embrittlement in iron

The embrittlement of metallic alloys by liquid metals leads to catastrophic material failure and severely impacts their structural integrity. The weakening of grain boundaries by the ingress of liquid metal and preceding segregation in the solid are thought to promote early fracture. However, the potential of balancing between the segregation of cohesion-enhancing interstitial solutes and embrittling elements inducing grain boundary decohesion is not understood. Here, we unveil the mechanisms of how boron segregation mitigates the detrimental effects of the prime embrittler, zinc, in a $\Sigma 5\,[0\,0\,1]$ tilt grain boundary in $\alpha-$Fe ($4~at.\%$ Al). Zinc forms nanoscale segregation patterns inducing structurally and compositionally complex grain boundary states. Ab-initio simulations reveal that boron hinders zinc segregation and compensates for the zinc induced loss in grain boundary cohesion. Our work sheds new light on how interstitial solutes intimately modify grain boundaries, thereby opening pathways to use them as dopants for preventing disastrous material failure.Comment: 29 pages, 6 figures in the main text and 10 figures in the supplementar

Analysis of Bonding between Conjugated Organic Molecules and Noble Metal Surfaces Using Orbital Overlap Populations

The electronic structure of metal−organic interfaces is of paramount importance for the properties of organic electronic and single-molecule devices. Here, we use so-called orbital overlap populations derived from slab-type band-structure calculations to analyze the covalent contribution to the bonding between an adsorbate layer and a metal. Using two prototypical molecules, the strong acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) on Ag(111) and the strong donor 1H,1′H-[4,4′]bipyridinylidene (HV0) on Au(111), we present overlap populations as particularly versatile tools for describing the metal−organic interaction. Going beyond traditional approaches, in which overlap populations are represented in an atomic orbital basis, we also explore the use of a molecular orbital basis to gain significant additional insight. On the basis of the derived quantities, it is possible to identify the parts of the molecules responsible for the bonding and to analyze which of the molecular orbitals and metal bands most strongly contribute to the interaction and where on the energy scale they interact in bonding or antibonding fashion

Modification of the Cu/W Interface Cohesion by Segregation

Cu/W composites are widely used in various industrial fields as they show thermomechanical properties suitable for a wide range of applications. Additionally, in semiconductor products, WTi in contact with Cu acts as a barrier material between Cu and Si/SiO2. Therefore, the bonding behavior of both Cu/W and Cu/WTi is of great economical interest, also with respect to the effects that impurities could have on the behaviour of the Cu/W(Ti) interface. The segregation behavior of relevant impurities has not been studied in detail before. In this work, we create atomistic models of the Cu/W and Cu/WTi interfaces, compare their energetics to previously known interfaces and study the effect of segregation on the interface cohesion. We find that all investigated segregants, i.e. Ti, Cl, S, Al, H, O, and vacancies weaken the cohesion of the interface

A theoretical view on self-assembled monolayers in organic electronic devices

©2008 SPIE--The International Society for Optical Engineering. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. The electronic version of this article is the complete one and can be found online at: http://dx.doi.org/10.1117/12.785122DOI: 10.1117/12.785122Presented at Organic Optoelectronics and Photonics III, Strasbourg, France, April 07, 2008.Self-assembled monolayers (SAMs) of covalently bound organic molecules are rapidly becoming an integral part of organic electronic devices. There, SAMs are employed to tune the work function of the inorganic electrodes in order to adjust the barriers for charge-carrier injection into the active organic layer and thus minimize undesired onset voltages. Moreover, in the context of molecular electronics, the SAM itself can carry device functionality down to a few or even a single molecule. In the present contribution, we review recent theoretical work on SAMs of prototype π-conjugated molecules on noble metals and present new data on additional systems. Based on first-principles calculations, we establish a comprehensive microscopic picture of the interface energetics in these systems, which crucially impact the performance of the specific device configuration the SAM is used in. Particular emphasis is put on the modification of the substrate work function upon SAM formation, the alignment of the molecular levels with the electrode Fermi energy, and the connection between these two quantities. The impact of strong acceptor substitutions is studied with the goal of lowering the energy barrier for the injection of holes from a metallic electrode into the subsequently deposited active layer of an organic electronic device

Interface energetics and level alignment at covalent metal-molecule junctions: pi-conjugated thiols on gold

© 2006 American Physical Society. The electronic version of this article is the complete one and can be found online at: http://link.aps.org/doi/10.1103/PhysRevLett.96.196806DOI: 10.1103/PhysRevLett.96.196806The energetics at the interfaces between metal and monolayers of covalently bound organic molecules is studied theoretically. Despite the molecules under consideration displaying very different frontier orbital energies, the highest occupied molecular levels are found to be pinned at a constant energy offset with respect to the metal Fermi level. In contrast, the molecular properties strongly impact the metal work function. These interfacial phenomena are rationalized in terms of charge fluctuations and electrostatics at the atomic length scale as determined by first-principles calculations

Ab Initio Study of Elastic and Mechanical Properties in FeCrMn Alloys

Mechanical properties of FeCrMn-based steels are of major importance for practical applications. In this work, we investigate mechanical properties of disordered paramagnetic fcc FeCr 10 – 16 Mn 12 – 32 alloys using density functional theory. The effects of composition and temperature changes on the magnetic state, elastic properties and stacking fault energies of the alloys are studied. Calculated dependencies of the lattice and elastic constants are used to evaluate the effect of the solid solution strengthening by Mn and Cr using a modified Labusch-Nabarro model and a model for concentrated alloys. The effect of Cr and Mn alloying on the stacking fault energies is calculated and discussed in connection to possible deformation mechanisms

Doping Molecular Wires

The concept of doping inorganic semiconductors enabled their successful application in electronic devices. Furthermore, the discovery of metal-like conduction in doped polymers started the entire field of organic electronics. In the present theoretical study, we extend the concept of doping to monomolecular wires suspended between two metal electrodes. Upon doping, the conductivity of representative model systems is found to increase by 2 orders of magnitude. More importantly, by providing a thorough understanding of the underlying mechanisms, our results pave the way for the development of novel molecular components envisioned as functional units in nanoscale devices