Shifting donor-acceptor photoluminescence in N-doped ZnO

We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence was explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process showing better electrical property was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptor has been evaluated to be $\approx 170$ meV, which is independent of the nitrogen concentration.Comment: 4 pages, 3 figures, 1 table, RevTeX4, to appear in the July issue of J. Phys. Soc. Jp

Introduction and recovery of point defects in electron-irradiated ZnO

We have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation (Eel=2MeV, fluence 6×10 exp 17 cm exp −2) was performed at room temperature, and isochronal annealings were performed from 300 to 600 K. In addition, monochromatic illumination of the samples during low-temperature positron measurements was used in identification of the defects. We distinguish two kinds of vacancy defects: the Zn and O vacancies, which are either isolated or belong to defect complexes. In addition, we observe negative-ion-type defects, which are attributed to O interstitials or O antisites. The Zn vacancies and negative ions act as compensating centers and are introduced at a concentration [VZn]≃cion≃2×10 exp 16 cm exp −3. The O vacancies are introduced at a 10-times-larger concentration [VO]≃3×10 exp 17 cm exp −3 and are suggested to be isolated. The O vacancies are observed as neutral at low temperatures, and an ionization energy of 100 meV could be fitted with the help of temperature-dependent Hall data, thus indicating their deep donor character. The irradiation-induced defects fully recover after the annealing at 600 K, in good agreement with electrical measurements. The Zn vacancies recover in two separate stages, indicating that the Zn vacancies are parts of two different defect complexes. The O vacancies anneal simultaneously with the Zn vacancies at the later stage, with an activation energy of EmV,O = 1.8 ± 0.1 eV. The negative ions anneal out between the two annealing stages of the vacancies.Peer reviewe

Evidence of the Zn Vacancy Acting as the Dominant Acceptor in n-Type ZnO

We have used positron annihilation spectroscopy to determine the nature and the concentrations of the open volume defects in as-grown and electron irradiated (Eel=2   MeV, fluence 6×10 exp 17   cm exp −2) ZnO samples. The Zn vacancies are identified at concentrations of [VZn]≃2×10 exp 15   cm exp −3 in the as-grown material and [VZn]≃2×10 exp 16   cm exp −3 in the irradiated ZnO. These concentrations are in very good agreement with the total acceptor density determined by temperature dependent Hall experiments. Thus, the Zn vacancies are dominant acceptors in both as-grown and irradiated ZnO.Peer reviewe

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

We have used positron annihilation spectroscopy to study the introduction and recovery of point defects introduced by 0.45 and 2 MeV electron irradiation at room temperature in n-type GaN. Isochronal annealings were performed up to 1220 K. We observe vacancy defects with specific lifetime of τV=190±15ps that we tentatively identify as N vacancies or related complexes in the neutral charge state in the samples irradiated with 0.45MeV electrons. The N vacancies are produced at a rate Σ0.45N≃0.25 cm exp −1. The irradiation with 2 MeV electrons produces negatively charged Ga vacancies and negative nonopen volume defects (negative ions) originating from the Ga sublattice, at a rate Σ2.0Ga≃5cm exp −1. The irradiation-induced N vacancies anneal out of the samples at around 600 K, possibly due to the motion of the irradiation-induced N interstitials. Half of the irradiation-induced Ga vacancies anneal out of the samples also around 600 K, and this is interpreted as the isolated Ga vacancies becoming mobile with a migration barrier of EV,GaM=1.8±0.1eV. Interestingly, we observe a change of charge state of the irradiation-induced negative ions from 2− to 1− likely due to a reconstruction of the defects in two stages at annealing temperatures of about 600 and 700 K. The negative ions anneal out of the samples together with the other half of the Ga vacancies (stabilized by, e.g., N vacancies and/or hydrogen) in thermal annealings at 800–1100K.Peer reviewe

Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured

Vortex Pinball Under Crossed AC Drives in Superconductors with Periodic Pinning Arrays

Vortices driven with both a transverse and a longitudinal AC drive which are out of phase are shown to exhibit a novel commensuration-incommensuration effect when interacting with periodic substrates. For different AC driving parameters, the motion of the vortices forms commensurate orbits with the periodicity of the pinning array. When the commensurate orbits are present, there is a finite DC critical depinning threshold, while for the incommensurate phases the vortices are delocalized and the DC depinning threshold is absent.Comment: 4 pages, 4 postscript figure

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

Self-compensation, the tendency of a crystal to lower its energy by forming point defects to counter the effects of a dopant, is here quantitatively proven. Based on a new theoretical formalism and several different experimental techniques, we demonstrate that the addition of 1.4 × 10 exp 21-cm exp −3 Ga donors in ZnO causes the lattice to form 1.7 × 10 exp 20-cm exp −3 Zn-vacancy acceptors. The calculated VZn formation energy of 0.2 eV is consistent with predictions from density functional theory. Our formalism is of general validity and can be used to investigate self-compensation in any degenerate semiconductor material.Peer reviewe

Accurate detection of uniparental disomy and microdeletions by SNP array analysis in myelodysplastic syndromes with normal cytogenetics.

Progress in the management of patients with myelodysplastic syndromes (MDS) has been hampered by the inability to detect cytogenetic abnormalities in 40-60% of cases. We prospectively analyzed matched pairs of bone marrow and buccal cell (normal) DNA samples from 51 MDS patients by single nucleotide polymorphism (SNP) arrays, and identified somatically acquired clonal genomic abnormalities in 21 patients (41%). Among the 33 patients with normal bone marrow cell karyotypes, 5 (15%) had clonal, somatically acquired aberrations by SNP array analysis, including 4 with segmental uniparental disomies (UPD) and 1 with three separate microdeletions. Each abnormality was detected more readily in CD34+ cells than in unselected bone marrow cells. Paired analysis of bone marrow and buccal cell DNA from each patient was necessary to distinguish true clonal genomic abnormalities from inherited copy number variations and regions with apparent loss of heterozygosity. UPDs affecting chromosome 7q were identified in two patients who had a rapidly deteriorating clinical course despite a low-risk International Prognostic Scoring System score. Further studies of larger numbers of patients will be needed to determine whether 7q UPD detected by SNP array analysis will identify higher risk MDS patients at diagnosis, analogous to those with 7q cytogenetic abnormalities