THE ROLE OF AN INTEGRATED E-LEARNING PLATFORM IN INCREASING THE PROCESSMANAGEMENT EFFICIENCY

This paper aims to present the steps taken and solutions implemented at the Cisco Networking Academy of the University of Bucharest in order to increase the process-management efficiency and the student satisfaction degree, mainly via the implementation of an own e-learning learning platform.The results are a significant improvement of work relationships, due to the fact that everyone's responsibilities are clearly defined together with the expectations for each employee. Furthermore, productivity tools enable us and our instructors to concentrate on increasing the quality of our students' learning experience in order to obtain even higher degrees of student satisfaction, retention, and promovability as a direct measure of teaching/learning success.Instructor Experience, User satisfaction, E-learning platform, Management Module, Student Assessment

Surface Modification of III-V Compounds Substrates for Processing Technology

Semiconductor materials became a part of nowadays life due to useful applications caused by characteristic properties as variable conductivity and sensitivity to light or heat. Electrical properties of a semiconductor can be modified by doping or by the application of electric fields or light; and from this view, devices made from semiconductors can be used for amplification or energy conversion. The compound semiconductor materials from III-V class experienced a qualitative leap from promising potential to nowadays technologic environment. The III-V semiconductor compounds are the material bases for electronic and optoelectronic devices such as high-electron-mobility transistors (HEMT), bipolar heterostructure transistors, IR light-emitting diodes, heterostructure lasers, Gunn diodes, Schottky devices, photodetectors, and heterostructure solar cells for terrestrial and spatial operating conditions. Among III-V semiconductor compounds, gallium arsenide (GaAs) and gallium antimonide (GaSb) are of special interest as a substrate material due to the lattice parameter match to solid solutions (ternary and quaternary) whose band gaps cover a wide spectral range from 0.8 to 4.3 μm in the case of GaSb. The solid/solid interfaces could play a key part in the development of microelectronic device technology. In most of the cases, the initial surface of III-V compounds exposed to laboratory conditions is covered usually with native oxide layers. Various techniques for performing the surface cleaning process are used, e.g., controlled chemical etching, in situ ion sputtering, coupled with controlled annealing in vacuum and often these classic techniques are combined in order to prepare an eligible semiconductor surface to be exposed to a technological device chain. The evolution of surface native oxides in different cleaning procedures and the characteristics of as-prepared semiconductor surface were investigated by modern surface investigation techniques, i.e., X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) combined with electrical characterization. Surface preparation of semiconductors in particular for III-V compounds is a necessary requirement in device technology due to the existence of surface impurities and the presence of native oxides. The impurities can affect the adherence of ohmic and Schottky contacts and due to thermal decomposition of native oxides (e.g., GaSb) it also affect the interface metal/semiconductor. The practical experience reveals that the simple preparation of a surface is a nonrealistic expectation, i.e., surface preparation is a result of combined treatments, namely chemical etching and thermal treatment, ion beam sputtering and thermal reconstruction procedure

Laser-induced chemical transformation of freestanding graphene oxide membranes in liquid and gas ammonia environments

Laser-induced chemical conversion of graphene oxide (GO) is an effective way to modify its properties and expand its potential use for numerous applications. In this work, a mechanically stable and flexible free-standing GO membrane is synthesized and further processed by ultraviolet laser radiation in gas and liquid ammonia-rich environments. Electron and atomic force microscopy, as well as X-ray photoelectron spectroscopy analysis, reveal that laser irradiation in gas leads to a large defect-induced morphology modification and high deoxygenation process, accompanied by the slight incorporation of nitrogen functionality to the reduced GO structure. Conversely, irradiation in liquid provokes significant integration of nitrogen groups, essentially amines, into a partially reduced GO structure, without evident modification of the morphology. Electrical measurements on the macro- and nano-scale point to a complex contribution of morphology and oxidized regions to the overall resistance of the rGO.The authors acknowledge the financial support of the Spanish Ministry of Economy and Competitiveness under the project ENE2014-56109-C3-3-R, in addition to the Romanian National Authority for Scientific Research and Innovation, CNCS – UEFISCDI, under the Grants PN-II-ID-PCE-2012-4-0292 and PNII- RU-TE-2014-4-1194. ICMAB acknowledges financial support from the Spanish Ministry of Economy and Competitiveness, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV-2015-0496).Peer reviewe

Laser-induced chemical transformation of graphene oxide-iron oxide nanoparticles composites deposited on polymer substrates

© 2015 Elsevier Ltd. All rights reserved. Ultraviolet laser irradiation of films composed of graphene oxide (GO) and GO-magnetite (Fe3O4) nanoparticles deposited on polydimethylsiloxane substrates is carried out. The irradiations are performed in vacuum and ammonia-rich gas environments. Electron and scanning probe microscopies reveal a rippling process in GO sheets as the accumulation of laser pulses proceeds, being the effect more pronounced with the increase of laser fluence. X-ray photoelectron spectroscopy analyses point to laser-induced chemical reaction pathways in GO completely different depending on the environment and the presence or absence of Fe3O4 nanoparticles. It is demonstrated that GO-based films with diverse type of oxygen- and nitrogen-containing chemical groups can be obtained by means of laser irradiation processes. The sheet resistance of these materials is also correlated to their structure and composition.The authors acknowledge the financial support of the Spanish Ministry of Economy and Competitiveness under the project ENE2014-56109-C3-3-R, in addition to the Executive Unit for Financing Higher Education, Research, Development, and Innovation of the Romanian Ministry of Education, Research, Youth, and Sports under the Grant PN-II-PT-PCCA-2011-3.2-1235. This work was also performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Los Alamos National Laboratory, an affirmative action equal opportunity employer, is operated by Los Alamos National Security, LLC, for the National Nuclear Security Administration of the U.S. Department of Energy under contract DE-AC52-06NA25396. Wei Gao thanks the start-up funding support from the College of Textiles at North Carolina State University. Josep Puigmarti Luis also acknowledge the Ramon y Cajal program (RYC-2011-08071) from the Spanish Ministry of Economy and Competitiveness.Peer Reviewe

One-step preparation of nitrogen doped titanium oxide/Au/reduced graphene oxide composite thin films for photocatalytic applications

© The Royal Society of Chemistry 2015. Titanium dioxide (TiO2) and TiO2/Au/reduced graphene oxide (rGO) nanocomposite thin films were grown by ultraviolet matrix assisted pulsed laser evaporation (UV-MAPLE) in controlled O2 or N2 atmospheres. An UV KrF∗ excimer laser (λ = 248 nm, τFWHM ∼ 25 ns, ν = 10 Hz) was used for the irradiation of the MAPLE targets consisting of TiO2 nanoparticles (NPs) or mixtures of TiO2 NPs, Au NPs, and graphene oxide (GO) platelets in aqueous solutions. The effect of Au and GO addition as well as nitrogen doping on the photocatalytic activity of the TiO2 thin films was investigated. The evaluation of the photocatalytic activity was performed by photodegradation of the organic methylene blue model dye pollutant under UV-visible light, >simulated sun> irradiation conditions. Our results show that the photocatalytic properties of TiO2 were significantly improved by the addition of Au NPs and rGO platelets. Nitrogen inclusion into the rGO structure further contributes to the enhancement of the TiO2/Au/rGO nanocomposites photocatalytic activity.The authors thank the financial support of the Executive Unit for Financing Higher Education, Research, Development, and Innovation of the Romanian Ministry of Education and Scientific Research under the contract PN-IIPT-PCCA-2011-3.2-1235 and the Spanish Ministry of Economy and Competitiveness under the contract ENE2014-56109-C3-3-R.Peer reviewedPeer Reviewe

XPS Analysis of AuGeNi/Cleaved GaAs(110) Interface

The depth composition of the thin layer alloy, AuGeNi, devoted to acting as an ohmic contact on n-GaAs(110) has been investigated by in situ XPS combined with Argon ion sputtering techniques. The fresh cleaved surfaces, supposed to be free of oxygen, were usually deposited with a 200 nm metallic layer in high vacuum conditions (better than 10−7 torr), by thermal evaporation, and annealed at a 430–450° Celsius temperature for 5 minutes. About 18 sessions of ion Ar surfaces etching and intermediate XPS measurements were performed in order to reveal the border of the metal/semiconductor interface. The atomic concentrations of the chemical elements have been approximated. Au4f, Ga3d, Ga2p, As3d, As2p, Ni2p3/2, Ge3d, O1s, and C1s spectral lines were recorded. The Au, Ge, and Ni have a homogenous distribution while Ga and As tend to diffuse to the surface. Oxygen is present in the first layers of the surface while carbon completely disappears after the second etching step. The existence of an Au-Ga alloy was detected and XPS spectra show only metal Ni and Ge within the layer and at the interface. We tried to perform a study about the depth chemical composition profile analysis of AuGeNi layer on cleaved n-GaAs(110) by X-Ray Photoelectron Spectroscopy (XPS) technique

SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

Publisher's version (útgefin grein)Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous films were deposited by magnetron sputtering on Si substrate followed by rapid thermal annealing at 700, 800 and 1000 °C. We investigated films with Si:Ge:SiO2 compositions of 25:25:50 vol.% and 5:45:50 vol.%. TEM investigations reveal the major changes in films morphology (SiGe NCs with different sizes and densities) produced by Si:Ge ratio and annealing temperature. XPS also show that the film depth profile of SiGe content is dependent on the annealing temperature. These changes strongly influence electrical and photoconduction properties. Depending on annealing temperature and Si:Ge ratio, photocurrents can be 103 times higher than dark currents. The photocurrent cutoff wavelength obtained on samples with 25:25 vol% SiGe ratio decreases with annealing temperature increase from 1260 nm in SWIR for 700 °C annealed films to 1210 nm for those at 1000 °C. By increasing Ge content in SiGe (5:45 vol%) the cutoff wavelength significantly shifts to 1345 nm (800 °C annealing). By performing measurements at 100 K, the cutoff wavelength extends in SWIR to 1630 nm having high photoresponsivity of 9.35 AW−1.This work was supported by TE Contract no.30/2018 (PN-III-P1-1.1-TE-2016-2050, within PNCDI III), M-ERA.NET PhotoNanoP Contract No. 33/2016, PCE Contract No. 122/2017, PCCDI Contract No. 75/2018, and financed by CNCS-UEFISCDI, and by Romanian Ministry of Research and Innovation through NIMP Core Program PN19-03 (Contract No. 21N/08.02.2019)."Peer Reviewed

Laser synthesis of NixZnyO/reduced graphene oxide/carbon nanotube electrodes for energy storage applications

Porous multicomponent surface layers consisting of bimetallic oxide nanoparticles, carbon nanomaterials reduced graphene oxide (GO) and multiwall carbon nanotubes (MWCNTs) were prepared by reactive inverse matrix assisted pulsed laser evaporation. The layers were tested as electrodes for supercapacitor devices. Bimetallic oxide nanoparticles were grown through the mixing of simple inorganic oxides and organic compounds in distilled water. A frequency quadrupled Nd:YAG laser was used for the irradiation of the target dispersions consisting of GO platelets, MWCNTs, NiO, and Zn acetate. Besides oxide nanoparticles synthesis, which were present both on the surface of GO platelets and MWCTs and were also encapsulated within the MWCNTs walls, the GO platelets used for the preparation of the target dispersion were reduced under the effect of the laser pulses. An enhancement of the electrochemical performances of the nanohybrid electrodes were obtained as a results of the formation of bimetallic oxide nanoparticles. The electrodes exhibit fast charge–discharge cycling rate and improved storage capacity as compared to compound layer counterparts containing carbon nanomaterials, reduced graphene oxide, carbon nanotubes and simple binary transition metal oxide nanoparticles, 40F/cm3 volumetric capacitance at 10 mV/s scan rate, 1.5 mW/cm3 energy density and 12 W/cm3 power density at 4 mA/cm3 current density.The authors thank the financial support of the Spanish Ministry of Economy, Industry and Competitiveness under the project ENE2017-89210-C2-1-R, AEI/FEDER,EU. PGL thanks the financial support of the Spanish Ministry of Economy, Industry and Competitiveness through the grant BES-2017-081652 for the formation of scientific researchers. ICMAB acknowledges financial support from the Spanish Ministry of Economy and Competitiveness, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (CEX2019-000917-S).Peer reviewe

Laser synthesis of TiO2–carbon nanomaterial layers with enhanced photodegradation efficiency towards antibiotics and dyes

Graphene-based photocatalytic layers were prepared by reactive matrix assisted pulsed laser evaporation technique. Binary, nitrogen doped reduced graphene oxide (RGO)/TiO2 and ternary RGO/TiO2/graphitic carbon nitride (g-C3N4) compounds were synthesized and simultaneously deposited onto solid substrates. Aqueous dispersions of commercial graphene oxide platelets and TiO2 nanoparticles were prepared. NH3 or melamine powder was added to the dispersions to achieve enhanced nitrogen doping and synthesis of g-C3N4 during laser irradiation. The photocatalytic efficiency of the layers towards degradation of antibiotic, chloramphenicol and organic dye molecules was systematically investigated and correlated with structural, compositional, and morphological features. This study provides new insights into the importance of TiO2 crystal facets and the synergistic effects between TiO2 nanocrystals and the other constituents, nitrogen doped RGO and g-C3N4 of the hybrid layers. As a result of combined effect of constituent materials, TiO2, RGO, and g-C3N4 as well as N doping of RGO, through the generation of quaternary and pyrrolic N functionalities, the composite layers showed high photocatalytic efficiency for degradation of organic molecules. Stability and reusability experiments indicated that the composite layers maintain their high photodegradation efficiency towards organic molecules during consecutive degradation cycles. Active radical scavenging experiments were also carried out in order to determine the role of the main active species involved in the photocatalytic degradation process.The authors thank the financial support of the Executive Unit for Financing Higher Education, Research, Development and Innovation of the Romanian Ministry of Education and Scientific Research under the contract PN-III-P4-ID-PCE-2016-0550, the Spanish Ministry of Economy, Industry, and Competitiveness under the project ENE2017-89210-C2-1-R, AEI/FEDER,EU. ICMAB acknowledges financial support from the Spanish Ministry of Economy, Industry, and Competitiveness, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV-2015-0496). SR-FTIR experiments were performed at MIRAS beamline at ALBA Synchrotron with the collaboration of ALBA staff and CALIPSOplus (Grant 730872) funding.Peer reviewe