Analysis by Finite Element Calculations of Light Scattering in Laser-textured AZO Films for PV thin-film Solar Cells

In the thin-film photovoltaic industry, to achieve a high light scattering in one or more of the cell interfaces is one of the strategies that allow an enhancement of light absorption inside the cell and, therefore, a better device behavior and efficiency. Although chemical etching is the standard method to texture surfaces for that scattering improvement, laser light has shown as a new way for texturizing different materials, maintaining a good control of the final topography with a unique, clean, and quite precise process. In this work AZO films with different texture parameters are fabricated. The typical parameters used to characterize them, as the root mean square roughness or the haze factor, are discussed and, for deeper understanding of the scattering mechanisms, the light behavior in the films is simulated using a finite element method code. This method gives information about the light intensity in each point of the system, allowing the precise characterization of the scattering behavior near the film surface, and it can be used as well to calculate a simulated haze factor that can be compared with experimental measurements. A discussion of the validation of the numerical code, based in a comprehensive comparison with experimental data is include

Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

Transparent and conducting ZnO:Er:Yb thin films with visible up-conversion (660-nm emission under 980-nm excitation) were fabricated by RF magnetron sputtering. The as-deposited films were found to be transparent and conducting and the activation of the Er ions in these films to produce up-conversion luminescence was achieved by different post deposition annealing treatments in air, vacuum or by laser annealing using a Nd:YVO4 laser. The structural, electrical and optical properties and the up-conversion efficiency of these films were found to be strongly influenced by the annealing method, and a detailed study is reported in this paper. It has been demonstrated that, although the air annealing was the most efficient in terms of up-conversion, laser annealing was the only method capable of activating Er ions while preserving the electrical conductivity of the doped films. It has been shown that a minimum energy was needed in laser annealing to optically activate the rare earth ions in the ZnO host material to produce up-conversion. Up-converting and transparent conducting ZnO:Er:Yb films with an electrical resistivity of 5×10-2 Ω·cm and transparency ~80% in the visible wavelength range has been achieved by laser annealing

Investigation on the structural changes of ZnO:Er:Yb thin film during laser annealing to fabricate a transparent conducting upconverter

A transparent and conducting ZnO:Er:Yb thin film with upconversion properties has been achieved after being annealed with continuous laser radiation just before the ablation point of the material. This work demonstrates that the laser energy preserves the conductivity of the film and at the same time creates an adequate surrounding for Er and Yb to produce visible upconversion at 660, 560, 520, and 480 nm under 980 nm laser excitation. The relation between the structural, electrical and upconversion properties is discussed. It is observed that the laser energy melts part of the material, which recrystallizes creating rare earth oxides and two different wurtzite structures, one with substitutional rare earths and oxygen vacancies (responsible for the conductivity) and the other without substitutional rare earth ions (responsible for the upconversion emission)

Growth and properties of ZnO:Al on textured glass for thin film solar cells

Aluminium induced texturing (AIT) method has been used to texture glass substrates in order to enhance the photon absorption in thin film solar cells. The resultant glass roughness has been analyzed by varying the AIT process parameters and it has been found that the deposition method of Al is a decisive factor in tuning the texture. Two types of textures, a soft (texture E) and a rough texture (texture S), were achieved from the thermally evaporated and sputtered Al layers through AIT process. Aluminium-doped zinc oxide (AZO) layers of different thickness were deposited over both textures and over smooth glass. Haze values above 30% were obtained for texture S+AZO and above 10% for texture E+AZO. The resultant morphologies were free from sharp edges or deep valleys and the transparency and the resistivity values were also good enough to be used as front contact for thin film solar cells. In order to demonstrate the light absorption enhancement in a solar cell device, 200 nm of a-Si:H followed by 300nm of Ag were grown over the textured and smooth substrates with AZO, and an optical absorption enhancement of 35% for texture E and 53% for texture S was obtained in comparison to the smooth substrate

Aluminium induced texturing of glass substrates with improved light management for thin film solar cells

Aluminium induced texturing (AIT) method has been used to texture glass substrates to enhance photon absorption in microcrystalline thin film Si solar cells. In this process, a thin Al film is deposited on a glass substrate and a non-uniform redox reaction between the glass and the Al film occurs when they are annealed at high temperature. After etching the reaction products, the resultant glass surface presents a uniform and rough morphology. In this work, three different textures (­σrms ~85, ~95, ~125 nm) have been achieved by tuning the dc sputtering power and over them and over smooth glass, pin microcrystalline silicon solar cells have been fabricated. The cells deposited over the textured substrates showed an efficiency improvement in comparison to the cells deposited over the smooth glass. The best result was given for the glass texture σrms~125 nm that led to an average efficiency 2.1% higher than that given by the cell deposited on smooth glas

Up-conversion effect of Er- and Yb-doped ZnO thin films

Visible up-conversion in ZnO:Er and ZnO:Er:Yb thin films deposited by RF magnetron sputtering under different O2-rich atmospheres has been studied. Conventional photoluminescence (325 nm laser source) and up-conversion (980 nm laser source) have been performed in the films before and after an annealing process at 800 °C. The resulting spectra demonstrate that the thermal treatment, either during or post-deposition, activates optically the Er3+ ions, being the latter process much more efficient. Moreover, the atmosphere during deposition was also found to be an important parameter, as the deposition under O2 flow increases the optical activity of Er+3 ions. In addition, the inclusion of Yb3+ ions into the films has shown an enhancement of the visible up-conversion emission at 660 nm by a factor of 4, which could be associated to either a better energy transfer from the 2F5/2 Yb level to the 4I11/2 Er one, or to the prevention of having Er2O3 clustering in the films

Analysis by Finite Element Calculations of Light Scattering in Laser-textured AZO Films for PV thin-film Solar Cells

In the thin-film photovoltaic industry, to achieve a high light scattering in one or more of the cell interfaces is one of the strategies that allow an enhancement of light absorption inside the cell and, therefore, a better device behavior and efficiency. Although chemical etching is the standard method to texture surfaces for that scattering improvement, laser light has shown as a new way for texturizing different materials, maintaining a good control of the final topography with a unique, clean, and quite precise process. In this work AZO films with different texture parameters are fabricated. The typical parameters used to characterize them, as the root mean square roughness or the haze factor, are discussed and, for deeper understanding of the scattering mechanisms, the light behavior in the films is simulated using a finite element method code. This method gives information about the light intensity in each point of the system, allowing the precise characterization of the scattering behavior near the film surface, and it can be used as well to calculate a simulated haze factor that can be compared with experimental measurements. A discussion of the validation of the numerical code, based in a comprehensive comparison with experimental data is include

Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

Transparent and conducting ZnO:Er:Yb thin films with visible up-conversion (660-nm emission under 980-nm excitation) were fabricated by RF magnetron sputtering. The as-deposited films were found to be transparent and conducting and the activation of the Er ions in these films to produce up-conversion luminescence was achieved by different post deposition annealing treatments in air, vacuum or by laser annealing using a Nd:YVO4 laser. The structural, electrical and optical properties and the up-conversion efficiency of these films were found to be strongly influenced by the annealing method, and a detailed study is reported in this paper. It has been demonstrated that, although the air annealing was the most efficient in terms of up-conversion, laser annealing was the only method capable of activating Er ions while preserving the electrical conductivity of the doped films. It has been shown that a minimum energy was needed in laser annealing to optically activate the rare earth ions in the ZnO host material to produce up-conversion. Up-converting and transparent conducting ZnO:Er:Yb films with an electrical resistivity of 5×10-2 Ω·cm and transparency ~80% in the visible wavelength range has been achieved by laser annealing

Investigation on the structural changes of ZnO:Er:Yb thin film during laser annealing to fabricate a transparent conducting upconverter

A transparent and conducting ZnO:Er:Yb thin film with upconversion properties has been achieved after being annealed with continuous laser radiation just before the ablation point of the material. This work demonstrates that the laser energy preserves the conductivity of the film and at the same time creates an adequate surrounding for Er and Yb to produce visible upconversion at 660, 560, 520, and 480 nm under 980 nm laser excitation. The relation between the structural, electrical and upconversion properties is discussed. It is observed that the laser energy melts part of the material, which recrystallizes creating rare earth oxides and two different wurtzite structures, one with substitutional rare earths and oxygen vacancies (responsible for the conductivity) and the other without substitutional rare earth ions (responsible for the upconversion emission)