Measurement of Radiation Damage to 130nm Hybrid Pixel Detector Readout Chips

We present the first measurements of the performance of the Medipix3 hybrid pixel readout chip after exposure to significant x-ray flux. Specifically the changes in performance of the mixed mode pixel architecture, the digital periphery, digital to analogue converters and the e-fuse technology were characterised. A high intensity, calibrated x- ray source was used to incrementally irradiate the separate regions of the detector whilst it was powered. This is the first total ionizing dose study of a large area pixel detector fabricated using the 130nm CMOS technology

The detection of single electrons by means of a Micromegas-covered MediPix2 pixel CMOS readout circuit

A small drift chamber was read out by means of a MediPix2 readout chip as direct anode. A Micromegas foil was placed 50 $\mu$m above the chip, and electron multiplication occurred in the gap. With a He/Isobutane 80/20 mixture, gas multiplication factors up to tens of thousands were achieved, resulting in an efficiency for detecting single electrons of better than 90% . We recorded many frames containing 2D images with tracks from cosmic muons. Along these tracks, electron clusters were observed, as well as delta-rays.Comment: 15 pages, 9 included postscript figures, 5 separate jpeg figures, submitted to Nucl. Instr. and Meth. A. A complete postscript version with high resolution figures 1, 3, 11, 12 and 14 can be found at http://www.nikhef.nl/~i06/RandD/final/letter4.p

Time resolution studies of Timepix3 assemblies with thin silicon pixel sensors

Timepix3 is a multi-purpose readout ASIC for hybrid pixel detectors. It can measure time and amplitude simultaneously by employing time-of-arrival (ToA) and time-over-threshold (ToT) techniques. Both methods are systematically affected by timewalk. In this paper, a method for pixel-by-pixel calibration of the time response is presented. Assemblies of Timepix3 ASICs bump-bonded to thin planar silicon pixel sensors with thicknesses of 50 μ m, 100 μ m and 150 μ m are calibrated and characterised in particle beams. For minimum ionising particles, time resolutions down to 0.72 ± 0.04 ns are achieved

Timing performance of the Timepix4 front-end

A characterisation of the Timepix4 pixel front-end with a strong focus on timing performance is presented. Externally generated test pulses were used to probe the per-pixel time-to-digital converter (TDC) and measure the time-bin sizes by precisely controlling the test-pulse arrival time in steps of 10 ps. The results indicate that the TDC can achieve a time resolution of 60 ps, provided that a calibration is performed to compensate for frequency variation in the voltage controlled oscillators of the pixel TDCs. The internal clock distribution system of Timepix4 was used to control the arrival time of internally generated analog test pulses in steps of about 20 ps. The analog test pulse mechanism injects a controlled amount of charge directly into the analog front-end (AFE) of the pixel, and was used to measure the time resolution as a function of signal charge, independently of the TDC. It was shown that for the default configuration, the AFE time resolution in the hole-collecting mode is limited to 105 ps. However, this can be improved up to about 60 ps by increasing the preamplifier bias-current at the cost of increased power dissipation. For the electron-collecting mode, an AFE time resolution of 47 ps was measured for a bare Timepix4 device at a signal charge of 21 ke. It was observed that additional input capacitance from a bonded sensor reduces this figure to 62 ps

Design and characterisation of the CLICTD pixelated monolithic sensor chip

A novel monolithic pixelated sensor and readout chip, the CLIC Tracker Detector (CLICTD) chip, is presented. The CLICTD chip was designed targeting the requirements of the silicon tracker development for the experiment at the Compact Linear Collider (CLIC), and has been fabricated in a modified 180 nm CMOS imaging process with charge collection on a high-resistivity p-type epitaxial layer. The chip features a matrix of 16×128 elongated channels, each measuring 300×30 μm2. Each channel contains 8 equidistant collection electrodes and analog readout circuits to ensure prompt signal formation. A simultaneous 8-bit Time-of-Arrival (with 10 ns time bins) and 5-bit Time-over-Threshold measurement is performed on the combined digital output of the 8 sub-pixels in every channel. The chip has been fabricated in two process variants and characterised in laboratory measurements using electrical test pulses and radiation sources. Results show a minimum threshold between 135 and 180 e‾ and a noise of about 14 e‾ RMS. The design aspects and characterisation results of the CLICTD chip are presented

Precision scans of the pixel cell response of double sided 3D pixel detectors to pion and x-ray beams

hree-dimensional (3D) silicon sensors offer potential advantages over standard planar sensors for radiation hardness in future high energy physics experiments and reduced charge-sharing for X-ray applications, but may introduce inefficiencies due to the columnar electrodes. These inefficiencies are probed by studying variations in response across a unit pixel cell in a 55μm pitch double-sided 3D pixel sensor bump bonded to TimePix and Medipix2 readout ASICs. Two complementary characterisation techniques are discussed: the first uses a custom built telescope and a 120GeV pion beam from the Super Proton Synchrotron (SPS) at CERN; the second employs a novel technique to illuminate the sensor with a micro-focused synchrotron X-ray beam at the Diamond Light Source, UK. For a pion beam incident perpendicular to the sensor plane an overall pixel efficiency of 93.0±0.5% is measured. After a 10o rotation of the device the effect of the columnar region becomes negligible and the overall efficiency rises to 99.8±0.5%. The double-sided 3D sensor shows significantly reduced charge sharing to neighbouring pixels compared to the planar device. The charge sharing results obtained from the X-ray beam study of the 3D sensor are shown to agree with a simple simulation in which charge diffusion is neglected. The devices tested are found to be compatible with having a region in which no charge is collected centred on the electrode columns and of radius 7.6±0.6μm. Charge collection above and below the columnar electrodes in the double-sided 3D sensor is observed

The GBT Project

The GigaBit Transceiver (GBT) architecture and transmission protocol has been proposed for data transmission in the physics experiments of the future upgrade of the LHC accelerator, the SLHC. Due to the high beam luminosity planned for the SLHC, the experiments will require high data rate links and electronic components capable of sustaining high radiation doses. The GBT ASICs address this issue implementing a radiation-hard bi-directional 4.8 Gb/s optical fibre link between the counting room and the experiments. The paper describes in detail the GBT-SERDES architecture and presents an overview of the various components that constitute the GBT chipset

Timing performance of the LHCb VELO Timepix3 Telescope

We performed a detailed study of the timing performance of the LHCb VELO Timepix3 Telescope with a 180 GeV/c mixed hadron beam at the CERN SPS. A twofold method was developed to improve the resolution of single-plane time measurements, resulting in a more precise overall track time measurement. The first step uses spatial information of reconstructed tracks in combination with the measured signal charge in the sensor to correct for a mixture of different effects: variations in charge carrier drift time; variations in signal induction, which are the result of a non-uniform weighting field in the pixels; and lastly, timewalk in the analog front-end. The second step corrects for systematic timing offsets in Timepix3 that vary from -2 ns to 2 ns. By applying this method, we improved the track time resolution from 438$\,\pm\,$16 ps to 276$\,\pm\,$4 ps

Identification of particles with Lorentz factor up to 10410^{4} with Transition Radiation Detectors based on micro-strip silicon detectors

This work is dedicated to the study of a technique for hadron identification in the TeV momentum range, based on the simultaneous measurement of the energies and of the emission angles of the Transition Radiation (TR) X-rays with respect to the radiating particles. A detector setup has been built and tested with particles in a wide range of Lorentz factors (from about $10^3$ to about $4 \times 10^4$ crossing different types of radiators. The measured double-differential (in energy and angle) spectra of the TR photons are in a reasonably good agreement with TR simulation predictions.Comment: 31 pages, 12 figures, paper published on Nuclear Instruments & Methods