Determination of Young's modulus of Sb2S3 nanowires by in situ resonance and bending methods

Publisher Copyright: © 2016 Jasulaneca et al.In this study we address the mechanical properties of Sb2S3 nanowires and determine their Young's modulus using in situ electricfield- induced mechanical resonance and static bending tests on individual Sb2S3 nanowires with cross-sectional areas ranging from 1.1·104 nm2 to 7.8·104 nm2. Mutually orthogonal resonances are observed and their origin explained by asymmetric cross section of nanowires. The results obtained from the two methods are consistent and show that nanowires exhibit Young's moduli comparable to the value for macroscopic material. An increasing trend of measured values of Young's modulus is observed for smaller thickness samples.publishersversionPeer reviewe

Fabrication and Characterization of Double- and Single-Clamped CuO Nanowire Based Nanoelectromechanical Switches

Funding Information: This research was funded by the European Regional Development Fund (project no. 1.1.1.1/16/A/256, ?Creation of nanoelectromechanical switches?). Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.Electrostatically actuated nanoelectromechanical (NEM) switches hold promise for operation with sharply defined ON/OFF states, high ON/OFF current ratio, low OFF state power consumption, and a compact design. The present challenge for the development of nanoelectromechanical system (NEMS) technology is fabrication of single nanowire based NEM switches. In this work, we demonstrate the first application of CuO nanowires as NEM switch active elements. We develop bottom-up and top-down approaches for NEM switch fabrication, such as CuO nanowire synthesis, lithography, etching, dielectrophoretic alignment of nanowires on electrodes, and nanomanipulations for building devices that are suitable for scalable production. Theoretical modelling finds the device geometry that is necessary for volatile switching. The modelling results are validated by constructing gateless double-clamped and single-clamped devices on-chip that show robust and repeatable switching. The proposed design and fabrication route enable the scalable integration of bottom-up synthesized nanowires in NEMS.publishersversionPeer reviewe

Extra tension at electrode-nanowire adhesive contacts in nano-electromechanical devices

We report a strong tangential component of the reaction force at electrode to nanowire adhesive contact which was previously established using electrostatic attraction. The reaction force tangential component absolute value was found to be comparable to or even bigger than the corresponding normal component. This effect is important for understanding of the mechanics of nano-electromechanical devices. Both the experiment and the corresponding theory are presented. Fitting of the obtained analytical solutions to experimental data was used to measure the reaction force acting at the contact for several nanowire-electrode configurations

Construction and Performance Test of Apparatus for Permeation Experiments with Controlled Surfaces

A new apparatus was constructed to examine gas-, atom- and Plasma-driven permeation of hydrogen isotopes through group VA metal membranes with precisely controlled surface states. Absorption and desorption experiments are also possible. The new apparatus consists of two vacuum chambers, an upstream chamber and a downstream chamber, separated by a specimen membrane. Both chambers are evacuated by turbo-molecular pumps and sputter-ion pumps. The upstream chamber is equipped with Ta filaments serving as atomizers in atom-driven permeation experiments and cathodes in plasma-driven permeation experiments. The specimen membrane is formed into a tubular and electrically isolated from the chamber. Hence, ohmic heating of the membrane is possible, and this feature of the membrane is suitable for surface cleaning by high-temperature heating and impurity doping for the control of surface chemical composition through surface segregation. Both chambers were evacuated to 1x10-7 Pa after baking. The main component of residual gas was H2, and the partial pressures of impurity gases other than H2 were ca. 1x10-8 Pa. Gas- and atom-driven permeation experiments were successfully carried out with hydrogen gas for Nb membrane activated by heating in vacuum at 1173K. Superpermeation was observed in the atom-driven permeation experiments. Absorption experiments with a clean surface were also carried out. The surface was, however, cleaned only partially, because the temperature distribution was not uniform during high-temperature heating. Nevertheless, surface cleanliness was retained during absorption experiments under the present vacuum conditions. A new membrane assembly that will enable a uniform temperature distribution is now under construction

Influence of Oxygen and Sulfur on Hydrogen Absorption by Vanadium

Sticking coefficient of H2, α, on a vanadium surface was measured after heat treatments in vacuum at 673, 873, 973 and 1273 K. The values of α were comparable after heat treatments at 673, 873 and 973 K, while significant reduction was observed after heat treatment at 1273 K. Arrhenius plots of α showed that the pre-exponential factor, α0, was far smaller than unity for all heat treatment conditions. This observation indicated that only minor portions of surface sites were active for hydrogen ingress. Change in chemical surface state of V by heat treatments in vacuum at 673, 873, 1073 and 1273 K was also investigated by means of X-ray photoelectron spectroscopy. The specimen surface was mainly covered by VO at 673 K and by an oxygen adlayer at 873 K. Sulfur appeared at 1073 K and completely substituted for oxygen at 1273 K. Namely, sulfur became the dominant surface impurity in the temperature region where α showed significant reduction. It was therefore concluded that the barrier effect of oxygen, including formation of a VO layer, was much weaker than that of sulfur under the present conditions

Extra tension at electrode-nanowire adhesive contacts in nano-electromechanical devices

We report a strong tangential component of the reaction force at electrode to nanowire adhesive contact which was previously established using electrostatic attraction. The reaction force tangential component absolute value was found to be comparable to or even bigger than the corresponding normal component. This effect is important for understanding of the mechanics of nano-electromechanical devices. Both the experiment and the corresponding theory are presented. Fitting of the obtained analytical solutions to experimental data was used to measure the reaction force acting at the contact for several nanowire-electrode configurations

AC-assisted single-nanowire electromechanical switch

A unique two-source controlled nanoelectromechanical switch has been assembled from individual, single-clamped Ge nanowires. The switching behaviour was achieved by superimposing the control signals of specific frequencies to the electrostatic potential of the output terminals, eliminating the need for an additional gate electrode. Using an in situ manipulation technique inside a scanning electron microscope, we demonstrate that the pull-out force required to overcome adhesion at the contact can be significantly reduced by exciting mechanical resonant modes within the nanowire

AC-assisted single-nanowire electromechanical switch

A unique two-source controlled nanoelectromechanical switch has been assembled from individual, single-clamped Ge nanowires. The switching behaviour was achieved by superimposing the control signals of specific frequencies to the electrostatic potential of the output terminals, eliminating the need for an additional gate electrode. Using an in situ manipulation technique inside a scanning electron microscope, we demonstrate that the pull-out force required to overcome adhesion at the contact can be significantly reduced by exciting mechanical resonant modes within the nanowire