6 research outputs found
Highly Conductive Porous Transition Metal Dichalcogenides via Water Steam Etching for High-Performance Lithium–Sulfur Batteries
Lithium–sulfur
(Li–S) batteries show significant advantages for next-generation
energy storage systems owing to their high energy density and cost
effectiveness. The main challenge in the development of long-life
and high-performance Li–S batteries is to simultaneously facilitate
the redox kinetics of sulfur species and suppress the shuttle effect
of polysulfides. In this contribution, we present a general and green
water-steam-etched approach for the fabrication of H- and O-incorporated
porous TiS<sub>2</sub> (HOPT). The conductivity, porosity, chemisorptive
capability, and electrocatalytic activity of HOPT are enhanced significantly
when compared with those of raw TiS<sub>2</sub>. The synthetic method
can be expanded to the fabrication of other highly conductive transition
metal dichalcogenides such as porous NbS<sub>2</sub> and CoS<sub>2</sub>. The as-obtained HOPT can serve as both a substitute of conductive
agents and an additive of interlayer materials. The optimal electrode
delivers discharge capacities of 950 mA h g<sup>–1</sup> after
300 cycles at 0.5 C and 374 mA h g<sup>–1</sup> after 1000
cycles at 10 C. Impressively, an unprecedented reversible capacity
of 172 mA h g<sup>–1</sup> is achieved after 2500 cycles at
30 C, and the average capacity fading rate per cycle is as low as
0.015%. Importantly, four half-cells based on this electrode in series
could drive 60 light-emitting diode indicator modules (the nominal
power 3 W) after 20 s of charging. The instantaneous current and power
of this device on reaching 275 A g<sup>–1</sup> and 2611 W
g<sup>–1</sup>, respectively, indicate outstanding high-power
discharge performance and potential applications in electric vehicles
and other large-scale energy storage systems
[ZnBi<sub>4</sub>]<sup>3–</sup> Pentagon in K<sub>6</sub>ZnBi<sub>5</sub>: Aromatic All-Metal Heterocycle
The
first aromatic all-metal heterocycle, [ZnBi<sub>4</sub>]<sup>3–</sup>, found in the metallic salt, K<sub>6</sub>ZnBi<sub>5</sub>, has
been synthesized and structurally characterized. The exactly planar
[ZnBi<sub>4</sub>]<sup>3–</sup> pentagon with six π electrons
coupled with multiply bonded Zn–Bi and Bi–Bi bonds,
multicentered π-conjugated bonding, and negative nucleus-independent
chemical shift values reveals its aromatic character. The metallic
nature of K<sub>6</sub>ZnBi<sub>5</sub> has been established by Pauli-type
temperature-independent paramagnetism and theoretical analysis of
the band structure and total/partial density of states
Predicting Single-Layer Technetium Dichalcogenides (TcX<sub>2</sub>, X = S, Se) with Promising Applications in Photovoltaics and Photocatalysis
One of the least known compounds
among transition metal dichalcogenides (TMDCs) is the layered triclinic
technetium dichalcogenides (TcX<sub>2</sub>, X = S, Se). In this work,
we systematically study the structural, mechanical, electronic, and
optical properties of TcS<sub>2</sub> and TcSe<sub>2</sub> monolayers
based on density functional theory (DFT). We find that TcS<sub>2</sub> and TcSe<sub>2</sub> can be easily exfoliated in a monolayer form
because their formation and cleavage energy are analogous to those
of other experimentally realized TMDCs monolayer. By using a hybrid
DFT functional, the TcS<sub>2</sub> and TcSe<sub>2</sub> monolayers
are calculated to be indirect semiconductors with band gaps of 1.91
and 1.69 eV, respectively. However, bilayer TcS<sub>2</sub> exhibits
direct-bandgap character, and both TcS<sub>2</sub> and TcSe<sub>2</sub> monolayers can be tuned from semiconductor to metal under effective
tensile/compressive strains. Calculations of visible light absorption
indicate that 2D TcS<sub>2</sub> and TcSe<sub>2</sub> generally possess
better capability of harvesting sunlight compared to single-layer
MoS<sub>2</sub> and ReSe<sub>2</sub>, implying their potential as
excellent light-absorbers. Most interestingly, we have discovered
that the TcSe<sub>2</sub> monolayer is an excellent photocatalyst
for splitting water into hydrogen due to the perfect fit of band edge
positions with respect to the water reduction and oxidation potentials.
Our predictions expand the two-dimensional (2D) family of TMDCs, and
the remarkable electronic/optical properties of monolayer TcS<sub>2</sub> and TcSe<sub>2</sub> will place them among the most promising
2D TMDCs for renewable energy application in the future
Ultralow Lattice Thermal Transport and Considerable Wave-like Phonon Tunneling in Chalcogenide Perovskite BaZrS<sub>3</sub>
Chalcogenide perovskites provide a promising avenue for
nontoxic,
stable thermoelectric materials. Here, the thermal transport and thermoelectric
properties of BaZrS3 as a typical orthorhombic perovskite
are investigated. An extremely low lattice thermal conductivity κL of 1.84 W/mK at 300 K is revealed for BaZrS3,
due to the softening effect of Ba atoms on the lattice and the strong
anharmonicity caused by the twisted structure. We demonstrate that
coherence contributions to κL, arising from wave-like
phonon tunneling, lead to an 18% thermal transport contribution at
300 K. The increasing temperature softens the phonons, thus reducing
the group velocity of materials and increasing the scattering phase
space. However, it simultaneously reduces the anharmonicity, which
is dominant in BaZrS3 and ultimately improves the particle-like
thermal transport. In addition, via replacement of the S atom with
Se- and Ti-alloying strategy, the ZT value of BaZrS3 is significantly increased from 0.58 to 0.91 at 500 K, making
it an important candidate for thermoelectric applications
Ultralow Lattice Thermal Transport and Considerable Wave-like Phonon Tunneling in Chalcogenide Perovskite BaZrS<sub>3</sub>
Chalcogenide perovskites provide a promising avenue for
nontoxic,
stable thermoelectric materials. Here, the thermal transport and thermoelectric
properties of BaZrS3 as a typical orthorhombic perovskite
are investigated. An extremely low lattice thermal conductivity κL of 1.84 W/mK at 300 K is revealed for BaZrS3,
due to the softening effect of Ba atoms on the lattice and the strong
anharmonicity caused by the twisted structure. We demonstrate that
coherence contributions to κL, arising from wave-like
phonon tunneling, lead to an 18% thermal transport contribution at
300 K. The increasing temperature softens the phonons, thus reducing
the group velocity of materials and increasing the scattering phase
space. However, it simultaneously reduces the anharmonicity, which
is dominant in BaZrS3 and ultimately improves the particle-like
thermal transport. In addition, via replacement of the S atom with
Se- and Ti-alloying strategy, the ZT value of BaZrS3 is significantly increased from 0.58 to 0.91 at 500 K, making
it an important candidate for thermoelectric applications
Novel Excitonic Solar Cells in Phosphorene–TiO<sub>2</sub> Heterostructures with Extraordinary Charge Separation Efficiency
Constructing
van der Waals heterostructures is an efficient approach
to modulate the electronic structure, to advance the charge separation
efficiency, and thus to optimize the optoelectronic property. Here,
we theoretically investigated the phosphorene interfaced with TiO<sub>2</sub>(110) surface (1L-BP/TiO<sub>2</sub>) with a type-II band
alignment, showing enhanced photoactivity. The 1L-BP/TiO<sub>2</sub> excitonic solar cell (XSC) based on the 1L-BP/TiO<sub>2</sub> exhibits
large built-in potential and high power conversion efficiency (PCE),
dozens of times higher than conventional solar cells, comparable to
MoS<sub>2</sub>/WS<sub>2</sub> XSC. The nonadiabatic molecular dynamics
simulation shows the ultrafast electron transfer time of 6.1 fs, and
slow electron–hole recombination of 0.58 ps, yielding >98%
internal quantum efficiency for charge separation, further guaranteeing
the practical PCE. Moreover, doping in phosphorene has a tunability
on built-in potential, charge transfer, light absorbance, as well
as electron dynamics, which greatly helps to optimize the optoelectronic
efficiency of a XSC