12,026 research outputs found
Lookahead Strategies for Sequential Monte Carlo
Based on the principles of importance sampling and resampling, sequential
Monte Carlo (SMC) encompasses a large set of powerful techniques dealing with
complex stochastic dynamic systems. Many of these systems possess strong
memory, with which future information can help sharpen the inference about the
current state. By providing theoretical justification of several existing
algorithms and introducing several new ones, we study systematically how to
construct efficient SMC algorithms to take advantage of the "future"
information without creating a substantially high computational burden. The
main idea is to allow for lookahead in the Monte Carlo process so that future
information can be utilized in weighting and generating Monte Carlo samples, or
resampling from samples of the current state.Comment: Published in at http://dx.doi.org/10.1214/12-STS401 the Statistical
Science (http://www.imstat.org/sts/) by the Institute of Mathematical
Statistics (http://www.imstat.org
Efficient quantum transport simulation for bulk graphene heterojunctions
The quantum transport formalism based on tight-binding models is known to be
powerful in dealing with a wide range of open physical systems subject to
external driving forces but is, at the same time, limited by the memory
requirement's increasing with the number of atomic sites in the scattering
region. Here we demonstrate how to achieve an accurate simulation of quantum
transport feasible for experimentally sized bulk graphene heterojunctions at a
strongly reduced computational cost. Without free tuning parameters, we show
excellent agreement with a recent experiment on Klein backscattering [A. F.
Young and P. Kim, Nature Phys. 5, 222 (2009)].Comment: 5 pages, 3 figure
Sequential Optimization for Efficient High-Quality Object Proposal Generation
We are motivated by the need for a generic object proposal generation
algorithm which achieves good balance between object detection recall, proposal
localization quality and computational efficiency. We propose a novel object
proposal algorithm, BING++, which inherits the virtue of good computational
efficiency of BING but significantly improves its proposal localization
quality. At high level we formulate the problem of object proposal generation
from a novel probabilistic perspective, based on which our BING++ manages to
improve the localization quality by employing edges and segments to estimate
object boundaries and update the proposals sequentially. We propose learning
the parameters efficiently by searching for approximate solutions in a
quantized parameter space for complexity reduction. We demonstrate the
generalization of BING++ with the same fixed parameters across different object
classes and datasets. Empirically our BING++ can run at half speed of BING on
CPU, but significantly improve the localization quality by 18.5% and 16.7% on
both VOC2007 and Microhsoft COCO datasets, respectively. Compared with other
state-of-the-art approaches, BING++ can achieve comparable performance, but run
significantly faster.Comment: Accepted by TPAM
Broken spin-Hall accumulation symmetry by magnetic field and coexisted Rashba and Dresselhaus interactions
The spin-Hall effect in the two-dimensional electron gas (2DEG) generates
symmetric out-of-plane spin Sz accumulation about the current axis in the
absence of external magnetic field. Here we employ the real space
Landauer-Keldysh formalism [B. K. Nikolic et al., Phys. Rev. Lett. 95, 046601
(2005); Phys. Rev. B 73, 075303 (2006)] by considering a four-terminal setup to
investigate the circumstances in which this symmetry is broken. For the absence
of Dresselhaus interaction, starting from the applied out-of-plane B
corresponding to Zeeman splitting energy 0 - 0.5 times the Rashba hopping
energy tR, the breaking process is clearly seen. The influence of the Rashba
interaction on the magnetization of the 2DEG is studied herein. For coexisted
Rashba tR and Dresselhaus tD spin-orbit couplings in the absence of B,
interchanging tR and tD reverses the entire accumulation pattern.Comment: 3 pages, 2 figures, appears in the proceedings of 10th MMM/INTERMAG
conferenc
Discriminating different scenarios to account for the cosmic excess by synchrotron and inverse Compton radiation
The excesses of the cosmic positron fraction recently measured by PAMELA and
the electron spectra by ATIC, PPB-BETS, Fermi and H.E.S.S. indicate the
existence of primary electron and positron sources. The possible explanations
include dark matter annihilation, decay, and astrophysical origin, like
pulsars. In this work we show that these three scenarios can all explain the
experimental results of the cosmic excess. However, it may be difficult
to discriminate these different scenarios by the local measurements of
electrons and positrons. We propose possible discriminations among these
scenarios through the synchrotron and inverse Compton radiation of the primary
electrons/positrons from the region close to the Galactic center. Taking
typical configurations, we find the three scenarios predict quite different
spectra and skymaps of the synchrotron and inverse Compton radiation, though
there are relatively large uncertainties. The most prominent differences come
from the energy band MHz for synchrotron emission and GeV for inverse Compton emission. It might be able to discriminate at least
the annihilating dark matter scenario from the other two given the high
precision synchrotron and diffuse -ray skymaps in the future.Comment: published in Pr
Correlated Quantum Memory: Manipulating Atomic Entanglement via Electromagnetically Induced Transparency
We propose a feasible scheme of quantum state storage and manipulation via
electromagnetically induced transparency (EIT) in flexibly
multi-ensembles of three-level atoms. For different atomic array
configurations, one can properly steer the signal and the control lights to
generate different forms of atomic entanglement within the framework of linear
optics. These results shed new light on designing the versatile quantum memory
devices by using, e.g., an atomic grid.Comment: 5 pages, 1 figur
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