Smoothed Finite Element Method

In this paper, the smoothed finite element method (SFEM) is proposed for 2D elastic problems by incorporation of the cell-wise strain smoothing operation into the conventional finite elements. When a constant smoothing function is chosen, area integration becomes line integration along cell boundaries and no derivative of shape functions is needed in computing the field gradients. Both static and dynamic numerical examples are analyzed in the paper. Compared with the conventional FEM, the SFEM achieves more accurate results and generally higher convergence rate in energy without increasing computational cost. In addition, as no mapping or coordinate transformation is performed in the SFEM, the element is allowed to be of arbitrary shape. Hence the well-known issue of the shape distortion of isoparametric elements can be resolved.Singapore-MIT Alliance (SMA

Stress waves in composite laminates excited by transverse plane shock waves

Shock and Vibration36419-433SHVI

Crystal size induced reduction in thermal hysteresis of Ni-Ti-Nb shape memory thin films

Ni41.7Ti38.8Nb19.5 shape memory alloy films were sputter-deposited onto silicon substrates and annealed at various temperatures. A narrow thermal hysteresis was obtained in the Ni-Ti-Nb films with a grain size of less than 50 nm. The small grain size, or large amount of grain boundaries, facilitates the phase transformation, thus reduces the hysteresis. The corresponding less transformation friction and heat transfer during the shear process, as well as reduced spontaneous lattice distortion, are also responsible for this reduction of the thermal hysteresis

Growth and characterization of ZnO films on (11-20) sapphire substrates by atomic layer deposition using DEZn and N2O

Zinc oxide (ZnO) films were grown on (11-20) sapphire substrates at 600 A degrees C by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O). A ZnO buffer layer was deposited at low temperature (LT) prior to the growth of a bulk ZnO film for a typical growth run. In some cases, buffer-layer annealing or post-annealing treatments were employed to optimize ZnO growth. Based on the experimental results of X-ray diffractometry (XRD) and transmission electron microscopy (TEM), all the as-grown ZnO films were found to show c-axis preferred orientation with co-existence of (ZnO)ayen (sapphire) and (ZnO)ayen (sapphire) relationships in the (0001)ZnO/(11-20)sapphire hetero-interface. Typical room temperature (RT) photoluminescence (PL) spectrum of the as-grown ZnO film shows only near band edge (NBE) emissions without defect luminescence. ZnO films with improved quality were achieved by post-annealing or buffer-layer annealing treatments. In particular, buffer-layer annealing was found to improve the crystalline and optical properties of a ZnO film substantially

Grooming of Dynamic Traffic in WDM Star and Tree Networks Using Genetic Algorithm

The advances in WDM technology lead to the great interest in traffic grooming problems. As traffic often changes from time to time, the problem of grooming dynamic traffic is of great practical value. In this paper, we discuss dynamic grooming of traffic in star and tree networks. A genetic algorithm (GA) based approach is proposed to support arbitrary dynamic traffic patterns, which minimizes the number of ADM's and wavelengths. To evaluate the algorithm, tighter bounds are derived. Computer simulation results show that our algorithm is efficient in reducing both the numbers of ADM's and wavelengths in tree and star networks.Comment: 15 page

Topcolor-Assisted Supersymmetry

It has been known that the supersymmetric flavor changing neutral current problem can be avoided if the squarks take the following mass pattern, namely the first two generations with the same chirality are degenerate with masses around the weak scale, while the third generation is very heavy. We realize this scenario through the supersymmetric extension of a topcolor model with gauge mediated supersymmetry breaking.Comment: 12 pages, latex, no figure

Patients with refractory cytomegalovirus (CMV) infection following allogeneic haematopoietic stem cell transplantation are at high risk for CMV disease and non-relapse mortality

AbstractPre-emptive therapy is an effective approach for cytomegalovirus (CMV) control; however, refractory CMV still occurs in a considerable group of recipients after allogeneic haematopoietic stem cell transplantation (allo-HSCT). Until now, hardly any data have been available about the clinical characteristics and risk factors of refractory CMV, or its potential harmful impact on the clinical outcome following allo-HSCT. We studied transplant factors affecting refractory CMV in the 100 days after allo-HSCT, and the impact of refractory CMV on the risk of CMV disease and non-relapse mortality (NRM). We retrospectively studied 488 consecutive patients with CMV infection after allo-HSCT. Patients with refractory CMV in the 100 days after allo-HSCT had a higher incidence of CMV disease and NRM than those without refractory CMV (11.9% vs. 0.8% and 17.1% vs. 8.3%, respectively). Multivariate analysis showed that refractory CMV infection in the 100 days after allo-HSCT was an independent risk factor for CMV disease (hazard ratio (HR) 10.539, 95% CI 2.467–45.015, p 0.001), and that refractory CMV infection within 60–100 days after allo-HSCT was an independent risk factor for NRM (HR 8.435, 95% CI 1.511–47.099, p 0.015). Clinical factors impacting on the risk of refractory CMV infection included receiving transplants from human leukocyte antigen-mismatched family donors (HR 2.012, 95% CI 1.603–2.546, p <0.001) and acute graft-versus-host disease (HR 1.905, 95% CI 1.352–2.686, p <0.001). We conclude that patients with refractory CMV infection during the early stage after allo-HSCT are at high risk for both CMV disease and NRM

Bulk Filling Branes and the Baryon Density in AdS/QCD with gravity back-reaction

We consider the gravity back reaction on the metric due to the baryon density in effective ads/qcd model by reconsidering the role of the charged AdS black hole. Previously it has been known that the U(1) charge is dual to the R-charge. Here we point out that if we consider the case where $AdS_5$ is completely filled with $N_f$ flavor branes, the gravity back reaction produces charged AdS black hole where the effect of charge on the metric is proportional to $N_f/N_c$. As a consequence, phase diagram changes qualitatively if we allow $N_f/N_c$ finite: it closes at the finite density unlike the probe brane embedding approach. Another issue we discuss here is the question whether there is any chemical potential dependence in the confining phase. We consider this problem in the hard wall model with baryon charge. We conclude that there is a non-trivial dependence on the chemical potential in this case also.Comment: 17 pages 3x2 figures, v2: references added;v3 published version, title change and reference adde