Electrical impedance imaging in two-phase, gas-liquid flows: 1. Initial investigation

The determination of interfacial area density in two-phase, gas-liquid flows is one of the major elements impeding significant development of predictive tools based on the two-fluid model. Currently, these models require coupling of liquid and vapor at interfaces using constitutive equations which do not exist in any but the most rudimentary form. Work described herein represents the first step towards the development of Electrical Impedance Computed Tomography (EICT) for nonintrusive determination of interfacial structure and evolution in such flows

Evaluation of Formal posterior distributions via Markov chain arguments

We consider evaluation of proper posterior distributions obtained from improper prior distributions. Our context is estimating a bounded function $\phi$ of a parameter when the loss is quadratic. If the posterior mean of $\phi$ is admissible for all bounded $\phi$, the posterior is strongly admissible. We give sufficient conditions for strong admissibility. These conditions involve the recurrence of a Markov chain associated with the estimation problem. We develop general sufficient conditions for recurrence of general state space Markov chains that are also of independent interest. Our main example concerns the $p$-dimensional multivariate normal distribution with mean vector $\theta$ when the prior distribution has the form $g(\|\theta\|^2) d\theta$ on the parameter space $\mathbb{R}^p$. Conditions on $g$ for strong admissibility of the posterior are provided.Comment: Published in at http://dx.doi.org/10.1214/07-AOS542 the Annals of Statistics (http://www.imstat.org/aos/) by the Institute of Mathematical Statistics (http://www.imstat.org

First-principles Calculations of Engineered Surface Spin Structures

The engineered spin structures recently built and measured in scanning tunneling microscope experiments are calculated using density functional theory. By determining the precise local structure around the surface impurities, we find the Mn atoms can form molecular structures with the binding surface, behaving like surface molecular magnets. The spin structures are confirmed to be antiferromagnetic, and the exchange couplings are calculated within 8% of the experimental values simply by collinear-spin GGA+U calculations. We can also explain why the exchange couplings significantly change with different impurity binding sites from the determined local structure. The bond polarity is studied by calculating the atomic charges with and without the Mn adatoms

Taking payments online: A framework for selection

Electronic bill presentment and payment (EBPP) is usually viewed as a killer application in e-commerce, which will fundamentally change the way customers receive and pay their bills. While many models exist, there is a dearth of information for determining which model would best fit customer characteristics and needs. This paper examines primary models, customer requirements, bill characteristics, and customer types to develop an exploratory framework for determviing which EBPP model a bill-generating firm should employ

Investigation of superlattice device structures

This report describes the investigation of growth properties, and the structure of epitaxial multilayer Si(Si(1x)Ge(x)) films grown on bulk Silicon Substrates. It also describes the fabrication and characterization of MOSFET and MESFET devices made on these epitaxial films. Films were grown in a CVD reactor using hydrides of Si and Ge with H2 and He as carrier gases. Growth temperatures were between 900 C and 1050 C with most films grown at 1000 C. Layer thickness was between 300A and 2000A and total film thickness was between 0.25 micro m and 7 micro m. The Ge content (X) in the alloy layers was between .05 and 0.2. N-type multilayer films grown on (100) p-type Si showed Hall mobility in the range 1000 to 1500 sq cm/v for an average carrier concentration of approx. 10 to the 16th power/cu cm. This is up to 50% higher than the Hall mobility observed in epitaxial Si films grown under the same conditions and with the same average carrier concentration. The mobility enhancement occurred in films with average carrier concentration (n) from 0.7 x 10 to the 16th power to 2 x 10 to the 17th power/cu cm, and total film thickness greater than 1.0 micro m. No mobility enhancement was seen in n-type multilayer films grown on (111) Si or in p-type multilayer films. The structure of the films was investigated was using SEM, TEM, AES, SIMS, and X-ray double crystal diffraction techniques. The film composition profile (AES, SIMS) showed that the transition region between layers is of the order of about 100A. The TEM examination revealed a well defined layered structure with fairly sharp interfaces and good crystalline quality. It also showed that the first few layers of the film (closest to the substrate) are uneven, most probably due to the initial growth pattern of the epitaxial film where growth occurs first in isolated islands that eventually growth and coalesce. The X-ray diffraction measurement determined the elastic strain and strain relief in the alloy layers of the film and the elastic strain in the intervening Si layers

Measuring the electrical impedance of mouse brain tissue

We report on an experimental method to measure conductivity of cortical tissue. We use a pair of 5mm diameter Ag/AgCl electrodes in a Perspex sandwich device that can be brought to a distance of 400 microns apart. The apparatus is brought to uniform temperature before use. Electrical impedance of a sample is measured across the frequency range 20 Hz-2.0 MHz with an Agilent 4980A four-point impedance monitor in a shielded room. The equipment has been used to measure the conductivity of mature mouse brain cortex in vitro. Slices 400 microns in thickness are prepared on a vibratome. Slices are bathed in artificial cerebrospinal fluid (ACSF) to keep them alive. Slices are removed from the ACSF and sections of cortical tissue approximately 2 mm times 2 mm are cut with a razor blade. The sections are photographed through a calibrated microscope to allow identification of their cross-sectional areas. Excess ACSF is removed from the sample and the sections places between the electrodes. The impedance is measured across the frequency range and electrical conductivity calculated. Results show two regions of dispersion. A low frequency region is evident below approximately 10 kHz, and a high frequency dispersion above this. Results at the higher frequencies show a good fit to the Cole-Cole model of impedance of biological tissue; this model consists of resistive and non-linear capacitive elements. Physically, these elements are likely to arise due to membrane polarization and migration of ions both intra- and extra-cellularly.http://www.iupab2014.org/assets/IUPAB/NewFolder/iupab-abstracts.pd

Geometric, electronic properties and the thermodynamics of pure and Al--doped Li clusters

The first--principles density functional molecular dynamics simulations have been carried out to investigate the geometric, the electronic, and the finite temperature properties of pure Li clusters (Li$_{10}$, Li$_{12}$) and Al--doped Li clusters (Li$_{10}$Al, Li$_{10}$Al$_2$). We find that addition of two Al impurities in Li$_{10}$ results in a substantial structural change, while the addition of one Al impurity causes a rearrangement of atoms. Introduction of Al--impurities in Li$_{10}$ establishes a polar bond between Li and nearby Al atom(s), leading to a multicentered bonding, which weakens the Li--Li metallic bonds in the system. These weakened Li--Li bonds lead to a premelting feature to occur at lower temperatures in Al--doped clusters. In Li$_{10}$Al$_2$, Al atoms also form a weak covalent bond, resulting into their dimer like behavior. This causes Al atoms not to `melt' till 800 K, in contrast to the Li atoms which show a complete diffusive behavior above 400 K. Thus, although one Al impurity in Li$_{10}$ cluster does not change its melting characteristics significantly, two impurities results in `surface melting' of Li atoms whose motions are confined around Al dimer.Comment: 9 pages, 7 figure

c(2x2) Interface Alloys in Co/Cu Multilayers - Influence on Interlayer Exchange Coupling and GMR

The influence of a c(2x2) ordered interface alloy of 3d transition metals at the ferromagnet/nonmagnet interface on interlayer exchange coupling (IXC), the formation of quantum well states (QWS) and the phenomenon of Giant MagnetoResistance is investigated. We obtained a strong dependence of IXC on interface alloy formation. The GMR ratio is also strongly influenced. We found that Fe, Ni and Cu alloys at the interface enhance the GMR ratio for in-plane geometry by nearly a factor of 2.Comment: 14 pages, 5 figures, 1 table, subm. to PR