Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors

© 2015 Elsevier B.V. All rights reserved. A capacitance-voltage (CV) study on large area CVD single layer graphene MOS capacitors has been carried out. The CV features are carefully examined to reveal the electronic origins of the observed frequency and bias dependence. In this study we investigate the frequency dispersion, propose the definition and extraction of the apparent flat-band Vafb, and finally perform the low temperature CV measurement to deduce the doping level of the graphene MOSCAPs.publisher: Elsevier articletitle: Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors journaltitle: Microelectronic Engineering articlelink: http://dx.doi.org/10.1016/j.mee.2015.04.104 content_type: article copyright: Copyright © 2015 Elsevier B.V. All rights reserved.status: publishe

A High-Resolution Image of Atomic Hydrogen in the M81 Group of Galaxies

IT has long been recognized that interactions between galaxies are important in determining their evolution. The distribution of gas—out of which new stars are formed—is strongly affected; in particular, gas may be concentrated near the nucleus, leading to a burst of star formation1–4. Here we present a map of atomic hydrogen (H I) in the nearest interacting group of galaxies (that dominated by M81), obtained by combining 12 separate fields observed with the Very Large Array. The H i that surrounds M81, M82 and NGC3077 (the most prominent galaxies in the group) is dominated by filamentary structures, clearly demonstrating the violent disruption of this system by tidal interactions. These observations should have detected all H I complexes more massive than 106 solar masses, meaning that our map contains all structures that might evolve into new dwarf galaxies

Boletín de Segovia: Número 107 - 1873 agosto 20

Copia digital. Madrid : Ministerio de Cultura. Subdirección General de Coordinación Bibliotecaria, 200