Scattering Mechanism in Modulation-Doped Shallow Two-Dimensional Electron Gases

We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron mobility versus density, mu \propto n^{alpha}, is extracted as a function of the 2DEG's depth. When shallower than 130 nm from the surface, the power-law exponent of the 2DEG, as well as the mobility, drops from alpha \simeq 1.65 (130 nm deep) to alpha \simeq 1.3 (60 nm deep). Our results for shallow 2DEGs are consistent with theoretical expectations for scattering by remote dopants, in contrast to the mobility-limiting background charged impurities of deeper heterostructures.Comment: 4 pages, 3 figures, modified version as accepted in AP

Rapid generation of angular momentum in bounded magnetized plasma

Direct numerical simulations of two-dimensional decaying MHD turbulence in bounded domains show the rapid generation of angular momentum in nonaxisymmetric geometries. It is found that magnetic fluctuations enhance this mechanism. On a larger time scale, the generation of a magnetic angular momentum, or angular field, is observed. For axisymmetric geometries, the generation of angular momentum is absent; nevertheless, a weak magnetic field can be observed. The derived evolution equations for both the angular momentum and angular field yield possible explanations for the observed behavior

New Anisotropic Behavior of Quantum Hall Resistance in (110) GaAs Heterostructures at mK Temperatures and Fractional Filling Factors

Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (001) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-Level. This remarkable new anisotropy is independent of the current direction and depends on the polarity of the magnetic field.Comment: 3 Pages, 4 figures, Latex, uses elsart.cls and physart.cls, to be published in Physica E Added reference, made contact configuration more clea

Optimal model parameters for multi-objective large-eddy simulations

A methodology is proposed for the assessment of error dynamics in large-eddy simulations. It is demonstrated that the optimization of model parameters with respect to one flow property can be obtained at the expense of the accuracy with which other flow properties are predicted. Therefore, an approach is introduced which allows to assess the total errors based on various flow properties simultaneously. We show that parameter settings exist, for which all monitored errors are "near optimal," and refer to such regions as "multi-objective optimal parameter regions." We focus on multi-objective errors that are obtained from weighted spectra, emphasizing both large- as well small-scale errors. These multi-objective optimal parameter regions depend strongly on the simulation Reynolds number and the resolution. At too coarse resolutions, no multi-objective optimal regions might exist as not all error-components might simultaneously be sufficiently small. The identification of multi-objective optimal parameter regions can be adopted to effectively compare different subgrid models. A comparison between large-eddy simulations using the Lilly-Smagorinsky model, the dynamic Smagorinsky model and a new Re-consistent eddy-viscosity model is made, which illustrates this. Based on the new methodology for error assessment the latter model is found to be the most accurate and robust among the selected subgrid models, in combination with the finite volume discretization used in the present study

Early Growth and Efficient Accretion of Massive Black Holes at High Redshift

Black-hole masses of the highest redshift quasars (4 <~ z <~ 6) are estimated using a previously presented scaling relationship, derived from reverberation mapping of nearby quasars, and compared to quasars at lower redshift. It is shown that the central black holes in luminous z >~ 4 quasars are very massive (>~ 10^9 solar masses). It is argued that the mass estimates of the high-z quasars are not subject to larger uncertainties than those for nearby quasars. Specifically, the large masses are not overestimates and the lack of similarly large black-hole masses in the nearby Universe does not rule out their existence at high-z. However, AGN host galaxies do not typically appear fully formed or evolved at these early epochs. This supports scenarios in which black holes build up mass very fast in a radiatively inefficient (or obscured) phase relative to the stars in their galaxies. Additionally, upper envelopes of black-hole mass of approximately 10^{10} solar masses and bolometric luminosity of ~ 10^{48} erg/s are observed at all redshifts.Comment: 17 pages including 7 figures (5 in color) and 1 table. To appear in ApJ, v600, January 1, 200

Measurement of electron-hole friction in an n-doped GaAs/AlGaAs quantum well using optical transient grating spectroscopy

We use phase-resolved transient grating spectroscopy to measure the drift and diffusion of electron-hole density waves in a semiconductor quantum well. The unique aspects of this optical probe allow us to determine the frictional force between a two-dimensional Fermi liquid of electrons and a dilute gas of holes. Knowledge of electron-hole friction enables prediction of ambipolar dynamics in high-mobility electron systems.Comment: to appear in PR

Mechanical Flip-Chip for Ultra-High Electron Mobility Devices

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.Comment: 5 pages, 3 figure